XC61FN5612PL-G [TOREX]

Power Management Circuit;
XC61FN5612PL-G
型号: XC61FN5612PL-G
厂家: Torex Semiconductor    Torex Semiconductor
描述:

Power Management Circuit

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中文:  中文翻译
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XC61FSeries  
ETR0202_004a  
Voltage Detectors, Delay Circuit Built-In  
GENERAL DESCRIPTION  
The XC61F series are highly accurate, low power consumption voltage detectors, manufactured using CMOS and laser  
trimming technologies. A delay circuit is built-in to each detector.  
Detect voltage is extremely accurate with minimal temperature drift.  
Both CMOS and N-channel open drain output configurations are available.  
Since the delay circuit is built-in, peripherals are unnecessary and high density mounting is possible.  
APPLICATIONS  
FEATURES  
Highly Accurate  
Low Power Consumption : 1.0μA(TYP.)[ VIN=2.0V ]  
Detect Voltage Range 1.6V ~ 6.0V in 0.1V increments  
: ± 2%  
Microprocessor reset circuitry  
Memory battery back-up circuits  
Power-on reset circuits  
:
Operating Voltage Range : 0.7V ~ 10.0V  
Detect Voltage Temperature Characteristics  
:±100ppm/(TYP.)  
Power failure detection  
System battery life and charge voltage monitors  
Delay circuitry  
Built-In Delay Circuit  
: 1ms ~ 50ms  
50ms ~ 200ms  
80ms ~ 400ms  
: N-channel open drain or CMOS  
: SOT-23  
Output Configuration  
Packages  
: SOT-89  
: TO-92  
Environmentally Friendly : EU RoHS Compliant, Pb Free  
* No parts are available with an accuracy of ± 1%  
TYPICAL PERFORMANCE  
TYPICAL APPLICATION CIRCUITS  
CHARACTERISTICS  
Release Delay Time vs. Ambient Temperature  
Ambient Temperature:Ta()  
1/14  
XC61F Series  
PIN CONFIGURATION  
(SIDE VIEW)  
PIN ASSIGNMENT  
PIN NUMBER  
PIN NAME  
FUNCTION  
SOT-23  
SOT-89  
TO-92 (T)  
3
2
1
2
3
1
2
3
1
VIN  
VSS  
Supply Voltage Input  
Ground  
VOUT  
Output  
2/14  
XC61F  
Series  
PRODUCT CLASSIFICATION  
Ordering Information  
*1  
(
)
XC61F ①②③④⑤⑥⑦-⑧  
DESIGNATOR  
ITEM  
SYMBOL  
DESCRIPTION  
C
N
CMOS output  
Output Configuration  
Detect Voltage  
N-ch open drain output  
e.g. 2.5V → ②2 , 5  
e.g. 3.8V → ②3, 8  
50ms ~ 200ms  
16 ~ 60  
1
4
Release Output Delay  
Detect Accuracy  
80ms ~ 400ms  
5
1ms ~ 50ms  
2
Within ±2.0%  
MR  
MR-G  
PR  
SOT-23 (3,000/Reel)  
SOT-23 (3,000/Reel)  
SOT-89 (1,000/Reel)  
PR-G  
TH  
SOT-89 (1,000/Reel)  
(*1)  
⑥⑦-⑧  
Packages (Order Unit)  
TO-92 Taping Type: Paper type (2,000/Tape)  
TO-92 Taping Type: Paper type (3,000/Tape)  
TO-92 Taping Type: Bag (500/Bag)  
TO-92 Taping Type: Bag (500/Bag)  
TH-G  
TB  
TB-G  
(*1)  
The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.  
BLOCK DIAGRAMS  
(1) CMOS output  
(2) N-channel open drain output  
3/14  
XC61F Series  
ABSOLUTE MAXIMUM RATINGS  
Ta = 25℃  
UNITS  
V
PARAMETER  
SYMBOL  
RATINGS  
12.0  
Input Voltage  
VIN  
Output Current  
IOUT  
50  
VSS -0.3 ~ VIN + 0.3  
VSS -0.3 ~ 9  
250  
mA  
V
CMOS  
Output Voltage  
VOUT  
N-ch open drain  
SOT-23  
Power Dissipation  
Pd  
mW  
SOT-89  
500  
TO-92  
300  
Operating Temperature Range  
Storage Temperature Range  
Topr  
Tstg  
-30+80  
-40+125  
Ta = 25℃  
ELECTRICAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS CIRCUIT  
VDF(T)  
x 0.98  
VDF  
VDF(T)  
VDF(T)  
x 1.02  
VDF  
x 0.08  
2.6  
Detect Voltage  
VDF  
V
V
VDF  
x 0.05  
0.9  
1.0  
1.3  
1.6  
2.0  
-
Hysteresis Width  
VHYS  
x 0.02  
VIN = 1.5V  
VIN = 2.0V  
-
-
3.0  
Supply Current  
ISS  
VIN  
μA  
VIN = 3.0V  
VIN = 4.0V  
VIN = 5.0V  
-
3.4  
-
3.8  
-
4.2  
Operating Voltage  
VDF= 1.6V to 6.0V  
0.7  
1.0  
3.0  
5.0  
6.0  
7.0  
10.0  
-
V
VIN = 1.0V  
VIN = 2.0V  
VIN = 3.0V  
VIN = 4.0V  
VIN = 5.0V  
2.2  
7.7  
-
-
-
-
N-ch VDS =0.5V  
10.1  
11.5  
13.0  
Output Current  
IOUT  
Ileak  
mA  
P-ch VDS=2.1V  
(CMOS Output)  
VIN = 8.0V  
-
-
-
-10.0  
0.01  
0.01  
-2.0  
-
CMOS  
Leak  
Current  
Output  
Nch Open  
Drain  
VIN = 10.0VVOUT = 10.0V  
μA  
0.1  
Detect Voltage  
Temperature  
Characteristics  
ΔVDF  
ΔToprVDF  
ppm/  
-
±100  
-
-
50  
80  
1
-
200  
400  
50  
Release Delay Time  
(VDR VOUT inversion)  
TDLY*  
VIN changes from 0.6V to 10V  
ms  
VDF (T): Setting detect voltage value  
Release Voltage: VDR = VDF + VHYS  
* Release Delay Time: 1ms to 50ms & 80ms to 400ms versions are also available.  
Note: The power consumption during power-start to output being stable (release operation) is 2μA greater than it is after that period  
(completion of release operation) because of delay circuit through current.  
4/14  
XC61F  
Series  
OPERATIONAL EXPLANATION  
CMOS output  
When a voltage higher than the release voltage (VDR) is applied to the voltage input pin (VIN), the voltage will  
gradually fall. When a voltage higher than the detect voltage (VDF) is applied to VIN, output (VOUT) will be equal to the  
input at VIN.  
Note that high impedance exists at VOUT with the N-channel open drain configuration. If the pin is pulled up, VOUT will  
be equal to the pull up voltage.  
When VIN falls below VDF, VOUT will be equal to the ground voltage (VSS) level (detect state). Note that this also  
applies to N-channel open drain configurations.  
When VIN falls to a level below that of the minimum operating voltage (VMIN ) output will become unstable. Because  
the output pin is generally pulled up with N-channel open drain configurations, output will be equal to pull up voltage.  
When VIN rises above the VSS level (excepting levels lower than minimum operating voltage), VOUT will be equal to  
VSS until VIN reaches the VDR level.  
Although VIN will rise to a level higher than VDR, VOUT maintains ground voltage level via the delay circuit.  
Following transient delay time, VIN will be output at VOUT. Note that high impedance exists with the N-channel open  
drain configuration and that voltage will be dependent on pull up.  
Notes:  
1. The difference between VDR and VDF represents the hysteresis range.  
2. Release delay time (tDLY) represents the time it takes for VIN to appear at VOUT once the said voltage has exceeded the  
VDR level.  
Timing Chart  
(tDLY  
)
5/14  
XC61F Series  
DIRECTIONS FOR USE  
Notes on Use  
1. Please use this IC within the stated maximum ratings. The IC is liable to malfunction should the ratings be exceeded.  
2. When a resistor is connected between the VIN pin and the input with CMOS output configurations, oscillation may  
occur as a result of voltage drops at RIN if load current (IOUT) exists. It is therefore recommend that no resistor be added.  
(refer to Oscillation Description (1) below)  
3. When a resistor is connected between the VIN pin and the input with CMOS output configurations, irrespective of N-ch  
output configurations, oscillation may occur as a result of through current at the time of voltage release even if load  
current (IOUT) does not exist. (refer to Oscillation Description (2) below)  
4. With a resistor connected between the VIN pin and the input, detect and release voltage will rise as a result of the IC's  
supply current flowing through the VIN pin.  
5. If a resistor (RIN) must be used, then please use with as small a level of input impedance as possible in order to control  
the occurrences of oscillation as described above.  
Further, please ensure that RIN is less than 10kΩ and that CIN is more than 0.1μF (Figure 1). In such cases, detect  
and release voltages will rise due to voltage drops at RIN brought about by the IC's supply current.  
6. Depending on circuit's operation, transient delay time of this IC can be widely changed due to upper limits or lower limits  
of operational ambient temperature.  
Oscillation Description  
(1) Oscillation as a result of output current with the CMOS output configuration:  
When the voltage applied at IN rises, release operations commence and the detector's output voltage increases. Load  
current (IOUT) will flow through RL. Because a voltage drop (RIN x IOUT) is produced at the RIN resistor, located  
between the input (IN) and the VIN pin, the load current will flow via the IC's VIN pin. The voltage drop will also lead to  
a fall in the voltage level at the VIN pin. When the VIN pin voltage level falls below the detect voltage level, detect  
operations will commence. Following detect operations, load current flow will cease and since voltage drop at RIN will  
disappear, the voltage level at the VIN pin will rise and release operations will begin over again.  
Oscillation may occur with this " release - detect - release " repetition.  
Further, this condition will also appear via means of a similar mechanism during detect operations.  
(2) Oscillation as a result of through current:  
Since the XC61F series are CMOS ICS, through current will flow when the IC's internal circuit switching operates  
(during release and detect operations). Consequently, oscillation is liable to occur during release voltage operations  
as a result of output current which is influenced by this through current (Figure 3).  
Since hysteresis exists during detect operations, oscillation is unlikely to occur.  
Figure 1. When using an input resistor  
6/14  
XC61F  
Series  
DIRECTIONS FOR USE (Continued)  
Oscillation Description (Continued)  
7/14  
XC61F Series  
TEST CIRCUITS  
Circuit ②  
Circuit ①  
220KΩ*  
Circuit ④  
Circuit ③  
Circuit ⑤  
220KΩ  
*Not necessary with CMOS output products.  
8/14  
XC61F  
Series  
TYPICAL PERFORMANCE CHARACTERISTICS  
9/14  
XC61F Series  
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)  
(7) Release Delay Time vs. Ambient Temperature  
10/14  
XC61F  
Series  
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)  
(8) Release Delay Time vs. Input Voltage  
11/14  
XC61F Series  
PACKAGING INFORMATION  
SOT-23  
SOT-89  
TO-92  
12/14  
XC61F  
Series  
MARKING RULE  
SOT-23, SOT-89  
represents integer of detect voltage and output configuration  
CMOS output (XC61FC series)  
3
MARK  
CONFIGURATION  
CMOS  
VOLTAGE (V)  
A
B
C
D
E
F
0.x  
1.x  
2.x  
3.x  
4.x  
5.x  
6.x  
CMOS  
1
2
CMOS  
CMOS  
CMOS  
CMOS  
H
CMOS  
N-channel open drain (XC61FN series)  
MARK  
CONFIGURATION  
VOLTAGE (V)  
K
L
N-ch  
N-ch  
N-ch  
N-ch  
N-ch  
N-ch  
N-ch  
0.x  
1.x  
2.x  
3.x  
4.x  
5.x  
6.x  
M
N
P
R
S
1
2
3
represents decimal number of detect voltage  
MARK  
VOLTAGE (V)  
MARK  
VOLTAGE (V)  
0
1
2
3
4
x.0  
x.1  
x.2  
x.3  
x.4  
5
6
7
8
9
x.5  
x.6  
x.7  
x.8  
x.9  
represents delay time  
VOLTAGE (V)  
DELAY TIME  
5
6
7
50 ~ 200ms  
80 ~ 400ms  
1 ~ 50ms  
represents assembly lot number (Based on internal standards)  
TO-92  
represents output configuration  
MARK  
OUTPUT CONFIGURATION  
C
N
CMOS  
N-ch  
F
6
1
, represents detect voltage  
MARK  
VOLTAGE (V)  
3
5
3
0
3.3  
5.0  
represents delay time  
1
2
3
MARK  
DELAY TIME  
50ms ~ 200ms  
80ms ~ 400ms  
1ms ~ 50ms  
TO-92 (T Type)  
TOP VIEW)  
1
4
5
represents detect voltage accuracy  
MARK  
2
DETECT VOLTAGE ACCURACY  
Within +2%  
represents a least significant digit of the production year (ex.)  
MARK  
PRODUCTION YEAR  
3
4
2003  
2004  
represents production lot number  
0 to 9, A to Z repeated (G, I, J, O, Q, W excluded)  
13/14  
XC61F Series  
1. The products and product specifications contained herein are subject to change without  
notice to improve performance characteristics. Consult us, or our representatives  
before use, to confirm that the information in this datasheet is up to date.  
2. We assume no responsibility for any infringement of patents, patent rights, or other  
rights arising from the use of any information and circuitry in this datasheet.  
3. Please ensure suitable shipping controls (including fail-safe designs and aging  
protection) are in force for equipment employing products listed in this datasheet.  
4. The products in this datasheet are not developed, designed, or approved for use with  
such equipment whose failure of malfunction can be reasonably expected to directly  
endanger the life of, or cause significant injury to, the user.  
(e.g. Atomic energy; aerospace; transport; combustion and associated safety  
equipment thereof.)  
5. Please use the products listed in this datasheet within the specified ranges.  
Should you wish to use the products under conditions exceeding the specifications,  
please consult us or our representatives.  
6. We assume no responsibility for damage or loss due to abnormal use.  
7. All rights reserved. No part of this datasheet may be copied or reproduced without the  
prior permission of TOREX SEMICONDUCTOR LTD.  
14/14  

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