XC6601A08BPR_技术文档

XC6601Series

ETR0335_003

Low Voltage Input LDO Voltage Regulators

■GENERAL DESCRIPTION

The XC6601 series is a low voltage input CMOS LDO regulator which provides highly accurate (±20mV) outputs and can

supply current efficiently due to its ultra low on-resistance even at low output voltages. The series is ideally suited to the

applications which require very low dropout voltage operation and consists of a voltage reference, an error amplifier, a driver

transistor, a current limiter, a fold back circuit, a thermal shutdown (TSD) circuit, an under voltage lock out (UVLO) circuit and

a phase compensation circuit.

Output voltage is selectable in 0.05V increments within a range of 0.7V to 1.8V using laser trimming technology and

ceramic capacitors can be used for the output stabilization capacitor (C_L).

The over current protection circuit (the current limiter and the fold back circuit) as well as the thermal shutdown circuit (the

TSD circuit) are built-in. These two protection circuits will operate when either the output current reaches the current limit

level or the junction temperature reaches the temperature limit level.

With the built-in UVLO function, the regulator output is forced OFF when the voltage level at the VBIAS pin or the VIN pin falls

below the UVLO voltage level.

The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced

power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor

(C_L) to be discharged via the internal auto-discharge switch which is located between the V_OUTpin and the V_SSpin. As a

result the V_OUTpin quickly returns to the V_SSlevel.

■FEATURES

Maximum Output Current

Dropout Voltage

■APPLICATIONS

●Mobile phones

: 400mA (Limiter 550mA TYP.)

: 38mV@IOUT=100mA (TYP.)

(at V^BIAS- VOUT=2.4V)

: 2.5V ~ 6.0V

(VBIAS - VOUT≧1.2V)

: 1.0V ~ 3.0V

(VIN≦VBIAS)

: 0.7V ~ 1.8V (0.05V increments)

:±20mV

: IBIAS=25μA , IIN=1.0μA (TYP.)

: I^BIAS=0.01μA , IIN=0.01μA (TYP.)

: VBIAS=2.0V, VIN=0.4V (TYP.)

:150℃/125℃ (TYP.)

: -40℃ ~ 85℃

●Cordless phones

●Wireless communication equipment

●Portable games

Bias Voltage Range

Input Voltage Range

●Cameras

Output Voltage Range

Output Voltage Accuracy

Power Consumption

●Audio visual equipment

●Portable AV equipment

●PDAs

UVLO

TSD (Detect/Release)

Operating Temperature Range

CL High Speed Auto-Discharge

Low ESR Capacitor

Packages

: Ceramic Capacitor Compatible

: USP-6C, SOT-25, SOT-89-5

■TYPICAL PEFORMANCE

■TYPICAL APPLICATION CIRCUIT

●VBIAS =3.6V , VIN =1.8V , VOUT =1.5V

CHARACTERISTICS

●Dropout Voltage vs. Output Current

XC6601B121MR

Ta=25 [℃]

300

VBIAS=3.0V

250

200

150

100

50

VBIAS=3.3V

VBIAS=3.6V

VBIAS=4.2V

VBIAS=5.0V

0

100

200

ꢀOutput Current: IOUT(mA)

300

400

1/32

XC6601 Series

■PIN CONFIGURATION

●USP-6C

●SOT-25

●SOT-89-5

VOUT

CE

4

5

1

2

3

VIN

VBIAS

VSS

SOT-25

(TOP VIEW)

*The heat dissipation pad of the USP-6C

package is recommended to solder as the

recommended mount pattern and metal

mask pattern for mounting strength. This

pad should be electrically opened or

connected to the VBIAS (No.1) pin.

■PIN ASSIGNMENT

PIN NUMBER

PIN NAME

FUNCTION

USP-6C

SOT-25

SOT-89-5

1

3

4

2

6

2

1

5

3

4

2

4

5

3

1

VBIAS

VIN

Power Supply Input

Driver Transistor Input

Output

VOUT

VSS

CE

Ground

ON/OFF Control

■PRODUCT CLASSIFICATION

●Ordering Information

XC6601①②③④⑤⑥

MARK

①

DESCRIPTION

SYMBOL

DESCRIPTION

Type of

A

B

: CE High Active, Pull-Down Resistor Built-in, CL Auto Discharge Function

: CE High Active, No Pull-Down Resistor Built-in, CL Auto Discharge Function

: e.g.) VOUT(T)=1.2V⇒②=1,③=2

Regulators

②③

Output Voltage

07 ~ 18

: 100mV increments, ±20mV accuracy

1

Output Voltage

Accuracy

e.g.) 1.2V⇒②=1,③=2,④=1

④

: 50mV increments, ±20mV accuracy

B

e.g.) 1.25V⇒②=1,③=2,④=B

M

E

P

R

L

: SOT-25

⑤

⑥

Packages

: USP-6C

: SOT-89-5

: Embossed Tape (Standard Feed)

: Embossed Tape (Reverse Feed)

Device Orientation

2/32

XC6601

Series

■BLOCK DIAGRAMS

(1) XC6601A Series

(2) XC6601B Series

*Diodes inside the circuit are an ESD protection diode and a parasitic diode.

3/32

XC6601 Series

■MAXIMUM ABSOLUTE RATINGS

Ta=25 ℃

PARAMETER

Bias Voltage

Input Voltage

Output Current

SYMBOL

VBIAS

VIN

RATINGS

VSS-0.3 ~ +7.0

700 ^(*1)

UNITS

V

IOUT

mA

VSS-0.3 ~ VBIAS+0.3

VSS-0.3 ~ VIN+0.3

VSS-0.3 ~ +7.0

100

Output Voltage

VOUT

VCE

V

CE Input Voltage

USP-6C

1000 (PCB mounted) *2

250

Power Dissipation

SOT-25

Pd

mW

600 (PCB mounted) *2

500

SOT-89-5

1300 (PCB mounted) *2

-40 ~ +85

Operating Temperature Range

Storage Temperature Range

^(*1)IOUT=Less than Pd / (VIN-VOUT)

Topr

Tstg

℃

-55 ~ +125

^(*2)The power dissipation figure shown is PCB mounted. Please refer to pages 28~30 for details.

4/32

XC6601

Series

■ELECTRICAL CHARACTERISTICS

Ta=25 ℃

CIRCUIT

MAX. UNITS

PARAMETER

Bias Voltage ^(*1)

Input Voltage ^(*2)

SYMBOL

V_BIAS

CONDITIONS

MIN.

2.5

TYP.

-

6.0

3.0

V

①

V

_CE=V_BIAS,V_IN=V_OUT(T)+0.3V

V_IN

1.0

V_BIAS=V_CE=3.6V

(*4)

VBIAS=VCE=3.6V, VIN =VOUT(T)+0.3V,

IOUT=100mA

-0.02 VOUT(T)

E-0 ^(*5)

+0.02

(*3)

Output Voltage

VOUT(E)

V

①

Maximum Output

Current 1

V_CE=V_BIAS,V_BIAS-V_OUT(T)≧1.2V

IOUTMAX 1

IOUTMAX 2

IOUTMAX 3

△VOUT

mA

mV

①

200

300

400

-

V_IN=V_OUT(T)+0.5V

Maximum Output

Current 2

V_CE=V_BIAS,V_BIAS-V_OUT(T)≧1.3V

V_IN=V_OUT(T)+0.5V

-

Maximum Output

Current 3

V_CE=V_BIAS,V_BIAS-V_OUT(T)≧1.5V

V_IN=V_OUT(T)+0.5V

-

VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V,

1mA≦IOUT≦300mA

Load Regulation

8

17

Dropout Voltage 1

Dropout Voltage 2

Dropout Voltage 3

Dropout Voltage 4

Vdif1^(*7)

Vdif2 ^(*7)

Vdif3 ^(*7)

Vdif4 ^(*7)

mV

①

VBIAS=VCE, IOUT=100mA

V_CE=V_BIAS, I_OUT=200mA

V_CE=V_BIAS, I_OUT=300mA

V_CE=V_BIAS, I_OUT=400mA

VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V

VOUT=OPEN

E-1 ^(*6)

E-2 ^(*6)

E-3 ^(*6)

E-4 ^(*6)

Supply Current 1

Supply Current 2

IBIAS

IIN

μA

①

8

25

45

VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V

VOUT=OPEN

0.1

1.0

3.0

V

_OUT(T)≧1.0V

_BIAS=V_CE=3.6V, V_IN=V_OUT(T)

_OUT= V_OUT(T)- 0.05V

_OUT(T)＜1.0V

V

Bias Current ^(*10)

IBIASMAX

mA

①

-

1.0

2.5

V

V_BIAS=V_CE=3.6V, V_IN=1.0V

V_OUT= V_OUT(T)- 0.05V

Stand-by Current 1

Stand-by Current 2

IBIAS_STB

IIN_STB

μA

①

VBIAS=6.0V, VIN=3.0V, VCE=VSS

-

0.01

0.10

0.35

V

_OUT(T)≧1.3V

_OUT(T)+1.2V≦V_BIAS≦6.0V,

V_IN=V_OUT(T)+0.3V, V_CE=V_BIAS, I_OUT=1mA

V

△VOUT/

Bias Regulation

Input Regulation

%/V

①

-

0.01

0.3

0.1

△VBIAS・VOUT

V_OUT(T)＜1.3V

2.5V≦V_BIAS≦6.0V,

V_IN=V_OUT(T)+0.3V, V_CE=V_BIAS, I_OUT=1mA

VOUT(T)≧0.90V,

V_OUT(T)+0.1V≦VIN≦3.0V,

△VOUT/

VBIAS=VCE=3.6V, IOUT=1mA

V OUT(T)＜0.90V,

△VIN・VOUT

1.0V≦VIN≦3.0V

VBIAS=VCE=3.6V, IOUT=1mA

VCE =VBIAS, VIN =VOUT(T)+0.3V,

IOUT=1mA

Bias Voltage UVLO

Input Voltage UVLO

VBIAS_UVLO

VIN_UVLO

V

①

②

1.37

0.07

-

2.0

0.4

40

2.5

0.6

-

VBIAS=VCE=3.6V, IOUT=1mA

VBIAS= V_CE=3.6VDC+0.2Vp-pAC,

VIN=VOUT(T)+0.3V, IOUT=30mA,f=1kHz

VIN=VOUT(T)+0.3VDC+0.2Vp-pAC,

VBIAS=3.6V, IOUT=30mA, f=1kHz

VBIAS Ripple Rejection VBIAS_PSRR

VIN Ripple Rejection VIN_PSRR

dB

②

-

60

-

5/32

XC6601 Series

■ELECTRICAL CHARACTERISTICS (Continued)

Ta=25 ℃

CIRCUIT

MAX. UNITS

PARAMETER

SYNBOL

CONDITIONS

MIN.

-

TYP.

Output Voltage

Temperature

VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V ,

IOUT=30mA,

△VOUT/

ppm/℃

①

±100

-

△Topr・VOUT

Characteristics

- 40℃≦ Topr ≦85℃

VOUT=VOUT(E)×0.95,

Limit Current

Short Current

I_LIM

mA

℃

①

400

550

80

-

VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V

VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V,

VOUT=0V

I_SHORT

TTSD

-

Thermal Shutdown

Detect Temperature

Thermal Shutdown

Release Temperature

Hysteresis Width

CL Auto-Discharge

Resistance

Junction Temperature

150

TTSR

℃

Ω

①

-

125

25

-

TTSD－TTSR

Rdischg

VBIAS=3.6V, VIN= VOUT(T)+0.3V,

VCE= VSS, VOUT=VOUT(T)

290

430

610

V

①

CE "H" Level Voltage

VCEH

VCEL

VBIAS=3.6V, VIN= VOUT(T)+0.3V

0.75

-

6.0

CE "L" Level Voltage

VBIAS=3.6V, VIN= VOUT(T)+0.3V

0.16

CE "H" Level Current

(A Series)

2.4

-0.1

-

8.0

0.1

VBIAS=VCE=6.0V,

VIN=VOUT(T)+0.3V

μA

①

ICEH

ICEL

CE "H" Level Current

(B Series)

VBIAS=6.0V, VCE=VSS

VIN=VOUT(T)+0.3V

CE "L" Level Current

NOTE:

* 1: Please use Bias voltage V_BIASwithin the range V_BIAS–V_OUT(E)^(*3)≧1.2V

* 2: Please use Input voltage V_INwithin the range V_IN≦V_BIAS

* 3: VOUT(E) = Effective output voltage (Refer to the voltage chart E-0 and E-1)

* 4: VOUT (T) = Specified output voltage

* 5: E-0 = Please refer to the table named OUTPUT VOLTAGE CHART

* 6: E-1 = Please refer to the table named DROPOUT VOLTAGE CHART

* 7: Vdif = {VIN1^(*8)-VOUT1^(*9)}.

* 8: VIN1 = The input voltage when VOUT1 appears as input voltage is gradually decreased.

* 9: VOUT1 = A voltage equal to 98% of the output voltage while maintaining an amply stabilized output voltage when V_IN=V_BIASat V_BIAS<3.0V, and

V_IN=3.0V at V_BIAS≧3.0V is input to the V_INpin.

* 10: IBIASMAX = A supply current at the V_BIASpin providing for the output current (I_OUT) .

■OUTPUT VOLTAGE CHART

NOMINAL

OUTPUT

VOLTAGE (V)

E-0

OUTPUT VOLTAGE (V)

VOUT

NOMINAL

OUTPUT

VOLTAGE (V)

E-0

OUTPUT VOLTAGE (V)

VOUT

VOUT(T)

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

MIN.

0.680

0.730

0.780

0.830

0.880

0.930

0.980

1.030

1.080

1.130

1.180

1.230

MAX.

0.720

0.770

0.820

0.870

0.920

0.970

1.020

1.070

1.120

1.170

1.220

1.270

VOUT(T)

1.30

1.35

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

MIN.

1.280

1.330

1.380

1.430

1.480

1.530

1.580

1.630

1.680

1.730

1.780

MAX.

1.320

1.370

1.420

1.470

1.520

1.570

1.620

1.670

1.720

1.770

1.820

6/32

XC6601

Series

■DROPOUT VOLTAGE CHART

E-1

DROPOUT VOLTAGE 1 (mV)

Vdif 1

NOMINAL

OUTPUT

VOLTAGE (V)

VBIAS=3.0 (V)

Vdif(mV)

VBIAS=3.3 (V)

VBIAS=3.6 (V)

VBIAS=4.2 (V)

VBIAS=5.0 (V)

Vgs^(*1)

Vgs

(V)

Vdif(mV)

Vgs

(V)

Vdif(mV)

Vgs

(V)

Vdif(mV)

Vgs

(V)

Vdif(mV)

(V)

VOUT(T)

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

TYP. MAX.

2.30

2.25

2.20

2.15

2.10

2.05

2.00

1.95

1.90

1.85

1.80

1.75

1.70

1.65

1.60

1.55

1.50

1.45

1.40

1.35

1.30

1.25

1.20

40

300 2.60

250 2.55

200 2.50

150 2.45

100 2.40

35

300 2.90

250 2.85

200 2.80

150 2.75

100 2.70

33

300 3.50

250 3.45

200 3.40

150 3.35

100 3.30

30

300 4.30

250 4.25

200 4.20

150 4.15

100 4.10

27

300

250

200

150

100

50

41

36

34

31

28

42

43

46

48

51

54

57

38

40

41

42

43

46

48

51

54

57

34

35

36

38

40

41

42

43

46

48

31

32

33

34

35

36

38

28

29

30

31

32

2.35

68

2.65

61

3.25

56

50

49

4.05

4.00

3.95

3.90

3.85

3.80

3.75

3.70

3.65

3.60

3.55

3.50

3.45

3.40

3.35

3.30

3.25

3.20

2.30

2.60

3.20

44

2.25

72

2.55

63

3.15

58

50

51

52

53

54

56

58

59

45

46

47

48

49

2.20

2.50

3.10

2.15

75

2.45

65

3.05

59

2.10

2.40

3.00

2.05

81

2.35

68

2.95

61

2.00

2.30

2.90

1.95

87

2.25

72

2.85

63

1.90

2.20

2.80

1.85

92

2.15

75

2.75

65

1.80

2.10

2.70

61

63

67

70

74

79

94

97

1.75

1.70

2.05

81

2.65

68

2.00

2.60

104 1.65

113 1.60

131 1.55

154 1.50

1.95

87

2.55

72

1.90

2.50

1.85

92

2.45

75

1.80

2.40

*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).

7/32

XC6601 Series

■DROPOUT VOLTAGE CHART (Continued)

E-2

DROPOUT VOLTAGE 2 (mV)

Vdif 2

NOMINAL

OUTPUT

VOLTAGE (V)

V_BIAS=3.0(V)

V_BIAS=3.3(V)

V_BIAS=3.6(V)

V_BIAS=4.2(V)

Vdif(mV)

V_BIAS=5.0(V)

Vdif(mV)

Vgs

Vgs^(*1)

Vgs

(V)

Vgs

(V)

Vgs

(V)

Vdif(mV)

(V)

V_{OUT (T)}

TYP. MAX.

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

2.30

2.25

2.20

2.15

2.10

2.05

2.00

1.95

1.90

1.85

1.80

1.75

1.70

1.65

1.60

1.55

1.50

1.45

1.40

1.35

1.30

1.25

1.20

81

85

300

250

200

150

131

2.60

2.55

2.50

2.45

2.40

2.35

2.30

2.25

2.20

2.15

2.10

2.05

2.00

1.95

1.90

1.85

1.80

1.75

1.70

1.65

1.60

1.55

1.50

74

76

300 2.90

250 2.85

200 2.80

150 2.75

68

70

300 3.50

250 3.45

200 3.40

150 3.35

62

63

300

250

200

150

100

4.30

4.25

4.20

4.15

4.10

4.05

4.00

3.95

3.90

3.85

3.80

3.75

3.70

3.65

3.60

3.55

3.50

3.45

3.40

3.35

3.30

3.25

3.20

57

58

300

250

200

150

100

88

90

78

81

72

74

76

78

81

85

88

90

96

101

63

64

65

67

68

70

72

74

76

78

58

59

60

61

62

63

64

117

2.70

2.65

2.60

2.55

2.50

2.45

2.40

2.35

2.30

2.25

2.20

2.15

2.10

2.05

2.00

1.95

1.90

1.85

1.80

110

3.30

3.25

3.20

3.15

3.10

3.05

3.00

2.95

2.90

2.85

2.80

2.75

2.70

2.65

2.60

2.55

2.50

2.45

2.40

139

146

154

170

179

192

123

111

98

88

90

91

92

93

94

95

97

98

96

85

127

131

139

146

154

170

179

192

114

117

123

127

131

139

146

154

101

103

106

108

110

111

114

117

101

108

115

122

88

90

96

101

108

115

122

129

135

145

154

165

175

197

206

223

248

293

353

*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).

8/32

XC6601

Series

■DROPOUT VOLTAGE CHART (Continued)

E-3

DROPOUT VOLTAGE 3 (mV)

NOMINAL

OUTPUT

Vdif 3

VOLTAGE (V)

V_BIAS=3.0(V)

V_BIAS=3.3(V)

Vdif(mV)

V_BIAS=3.6(V)

V_BIAS=4.2(V)

Vdif(mV)

V_BIAS=5.0(V)

Vgs^(*1)

Vgs

(V)

Vgs

(V)

Vdif(mV)

TYP. MAX.

Vdif(mV)

(V)

V_{OUT (T)}

TYP. MAX.

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

2.30

2.25

2.20

2.15

2.10

2.05

2.00

1.95

1.90

1.85

1.80

1.75

1.70

1.65

1.60

1.55

1.50

1.45

1.40

1.35

1.30

1.25

1.20

130

134

300

250

200

2.60 115

300 2.90 107

300 3.50

250 3.45

200 3.40

95

96

300

250

200

150

148

4.30

4.25

4.20

4.15

4.10

4.05

4.00

3.95

3.90

3.85

3.80

3.75

3.70

3.65

3.60

3.55

3.50

3.45

3.40

3.35

3.30

3.25

3.20

89

90

300

250

200

150

132

2.55

117

250 2.85

109

2.50

200 2.80

2.45

119

2.75

3.35

167

138

145

153

161

173

184

196

204

216

227

239

264

289

313

181

190

197

204

216

227

239

264

289

313

111

115

117

119

130

134

138

145

153

161

97

90

91

92

93

94

95

96

97

98

2.40

2.70

2.65

2.60

2.55

2.50

2.45

2.40

2.35

2.30

2.25

2.20

2.15

2.10

2.05

2.00

1.95

1.90

1.85

1.80

3.30

2.35

130

3.25

170

98

151

153

155

159

163

167

170

176

181

134

137

139

140

141

142

145

148

151

2.30

3.20

2.25

134

3.15

176

101

105

107

109

111

115

117

119

2.20

3.10

2.15

138

3.05

181

2.10

3.00

2.05

145

2.95

190

2.00

2.90

1.95

153

2.85

197

1.90

2.80

1.85

161

2.75

204

1.80

2.70

209

222

239

256

323

344

388

442

1.75

173

2.65

216

1.70

2.60

1.65

184

2.55

227

1.60

2.50

1.55

196

2.45

239

-

1.50

2.40

*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).

9/32

XC6601 Series

■DROPOUT VOLTAGE CHART (Continued)

E-4

DROPOUT VOLTAGE 4 (mV)

NOMINAL

OUTPUT

Vdif 4

VOLTAGE (V)

V_BIAS=3.0(V)

V_BIAS=3.3(V)

Vdif(mV)

V_BIAS=3.6(V)

V_BIAS=4.2(V)

Vdif(mV)

V_BIAS=5.0(V)

Vdif(mV)

Vgs^(*1)

Vgs

(V)

Vgs

(V)

Vgs

(V)

Vdif(mV)

TYP. MAX.

(V)

V_{OUT (T)}

TYP. MAX.

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

2.30

2.25

2.20

2.15

2.10

2.05

2.00

1.95

1.90

1.85

1.80

1.75

1.70

1.65

1.60

1.55

1.50

1.45

1.40

1.35

1.30

1.25

1.20

189

195

300

277

2.60 157

300 2.90 146

2.85

300 3.50 129

3.45

300

250

246

4.30 116

300

250

231

2.55

164

4.25

118

272

150

153

157

164

170

189

195

201

206

218

231

250

131

134

136

139

142

146

150

153

157

164

170

2.50

2.80

2.75

2.70

2.65

2.60

2.55

2.50

3.40

3.35

3.30

3.25

3.20

3.15

3.10

4.20

2.45

170

4.15

119

201

206

218

231

248

264

281

-

277

246

231

2.40

4.10

2.35

189

4.05

121

2.30

4.00

2.25

195

3.95

125

2.20

3.90

227

334

2.15

201

272 2.45

277 2.40

250 3.05

248 3.00

246

215

3.85

128

231

189

2.10

3.80

2.05

206

2.35

296

2.95

255

3.75

128

376

219

224

228

234

241

248

191

193

195

198

202

205

2.00

2.30

2.90

3.70

1.95

218

2.25

315

2.85

266

3.65

129

418

1.90

2.20

2.80

3.60

1.85

231

2.15

334

2.75

277

3.55

129

460

1.80

2.10

2.70

3.50

1.75

248

2.05

376

2.65

296

3.45

131

-

1.70

2.00

2.60

3.40

1.65

264

1.95

418

2.55

315

3.35

134

-

1.60

1.90

2.50

3.30

1.55

281

1.85

460

2.45

334

3.25

136

-

1.50

1.80

2.40

3.20

*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).

10/32

XC6601

Series

■OPERATIONAL EXPLANATION

The voltage divided by resistors R1 & R2 is compared with the internal reference voltage by the error amplifier. The N-channel

MOSFET which is connected to the VOUT pin is then driven by the subsequent output signal. The output voltage at the VOUT pin is

controlled & stabilized by a system of negative feedback.

V_BIASpin is power supply pin for output voltage control circuit, protection circuit and CE circuit. When output current increase,

the V_BIASpin supplies output current also. VIN pin is connected to a driver transistor and provides output current.

In order to obtain high efficient output current through low on-resistance, please take enough Vgs (=V_BIAS– V_OUT(T)) of the driver

transistor. Output current triggers operation of constant current limiter and fold-back circuit, heat generation triggers operation of

thermal shutdown circuit, the driver transistor circuit is forced OFF when V_BIASor V_INvoltage goes lower than UVLO voltage.

Further, the IC's internal circuitry can be shutdown via the CE pin's signal.

XC6601A series

With the XC6601 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation

circuit is built-in. The output capacitor (C_L) should be connected as close to V_OUTpin and V_SSpin to obtain stable phase

compensation. Values required for the phase compensation are as the table below.

For a stable power input, please connect an bias capacitor (C_BIAS) of 1.0μF between the V _BIASpin and the VSS pin. Also,

please connect an input capacitor (CIN) of 1.0μF between the VIN pin and the VSS pin. In order to ensure the stable phase

compensation while avoiding run-out of values, please use the capacitor (C_BIAS, C_IN, C_L) which does not depend on bias or

temperature too much. The table below shows recommended values of C_BIAS, C_IN, C_L.

BIAS CAPACITOR

C_BIAS

INPUT CAPACITOR

C_IN

OUTPUT CAPACITOR

C_L

SETTING VOLTAGE

0.7V～1.8V

C_BIAS=1.0μF

C_IN=1.0μF

CL=4.7μF

Recommended Values of C_BIAS,C_IN,C_L

11/32

XC6601 Series

■OPERATIONAL EXPLANATION (Continued)

XC6601 series can quickly discharge the electric charge at the output capacitor (CL) when a low signal to the EN pin which

enables a whole IC circuit put into OFF state, is inputted via the N-channel transistor located between the VOUT pin and the VSS

pin. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it could avoids malfunction.

At that time, CL discharge resistance is depended on a bias voltage. Discharge time of the output capacitor (CL) is set by the CL

auto-discharge resistance (R) and the output capacitor (CL). By setting time constant of a CL auto-discharge resistance value [R]

and an output capacitor value (CL) as τ(τ=C x R), the output voltage after discharge via the N channel transistor is calculated

by the following formulas.

V = VOUT x e –t/τ, or ｔ=τln（ VOUT(E) / V ）

V : Output voltage after discharge, VOUT(E) : Output voltage, t: Discharge time,

τ: CL auto-discharge resistance R×Output capacitor (CL) value C

The XC6601 series’ fold-back circuit operates as an output current limiter and a short protection of the output pin. When the load

current reaches the current limit level, the fixed current limiter circuit operates and output voltage drops. When the output pin is

shorted to the V_SSlevel, current flows about 80mA.

When the junction temperature of the built-in driver transistor reaches the temperature limit level (150℃ TYP.), the thermal

shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown

function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of the

thermal shutdown release temperature (125℃ TYP.).

When the V_BIASpin voltage drops below 2.0V (TYP.) or V_INpin voltage drops below 0.4V (TYP.), the output driver transistor is

forced OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the V_BIASpin

voltage rise at 2.2V (TYP.) or the V_INpin voltage rises at 0.4V (TYP.), the UVLO function is released. The driver transistor is

turned in the ON state and start to operate voltage regulation.

The IC internal circuitry can be shutdown via the signal from the CE pin with the XC6601 series. In shutdown mode, output at the

V_OUTpin will be pulled down to the V_SSlevel via R1 & R2. However, as for the XC6601 series, the CL auto-discharge resistor is

connected in parallel to R1 and R2 while the power supply is applied to the V_INpin. Therefore, time until the V_OUTpin reaches the

V_SSlevel becomes short.

The CE pin of XC6601A has pull-down circuitry so that CE input current increase during IC operation. The CE pin of XC6601B

does not have pull-down circuitry so that logic is not fixed when the CE pin is open. If the CE pin voltage is taken from V_BIASpin

or V_SSpin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through current

in the IC's internal circuitry when medium voltage is input.

■NOTE ON USE

1. Please use this IC within the stated absolute maximum ratings. The IC is liable to malfunction should the ratings be

exceeded.

2. Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output

current. Please keep the resistance low between V_BIASand V_SSwiring or V_INand V_SSwiring in particular.

3. Please wire the bias capacitor (C_BIAS), input capacitor (C_IN) and the output capacitor (C_L) as close to the IC as possible.

4. Capacitance values of these capacitors (C_BIAS,C_IN,C_L) are decreased by the influences of bias voltage and ambient

temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR

influence.

5. In case of the output capacitor more than C_L=22μF is used, ringing of input current occurs when rising time.

6.

V_INand CE should be applied at least 10μs after the bias voltage V_BIASreaches the requested voltage.

If V_INand CE are applied within 10μs, inrush current like 1A may occurs.

12/32

XC6601

Series

■TEST CIRCUITS

Circuit ①

Circuit ②

13/32

XC6601 Series

■TYPICAL PERFORMANCE CHARACTERISTICS

（1） Output Voltage vs. Output Current

XC6601B071MR

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

C =C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

IN

V_BIAS=3.6V, V_IN=1.0V

V_BIAS=3.6V, Ta=25℃

0.8

0.6

VIN=1.0V

VIN=1.2V

VIN=1.5V

Ta=-40℃

Ta=25℃

Ta=85℃

0.4

0.2

0.0

0.2

0.0

0

100 200 300 400 500 600 700

Output Current: I_OUT(mA)

0

100 200 300 400 500 600 700

Output Current: I_OUT(mA)

XC6601B121MR

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=1.5V

C =C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

IN

V_BIAS=3.6V, Ta=25℃

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Ta=-40℃

Ta=25℃

Ta=85℃

VIN=1.3V

VIN=1.5V

VIN=1.8V

0

100 200 300 400 500 600 700

Output Current: I_OUT(mA)

0

100 200 300 400 500 600 700

Output Current: I_OUT(mA)

XC6601B181MR

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=2.1V

C =C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

IN

V_BIAS=3.6V, Ta=25℃

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

VIN=1.9V

VIN=2.1V

VIN=2.3V

Ta=-40℃

Ta=25℃

Ta=85℃

0

100 200 300 400 500 600 700

Output Current: I_OUT(mA)

0

100 200 300 400 500 600 700

Output Current: I_OUT(mA)

14/32

XC6601

Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

（2） Output Voltage vs. Bias Voltage

XC6601x071

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=1.0V, Ta=25℃

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=1.0V, Ta=25℃

0.9

0.8

0.7

0.6

0.5

0.9

0.8

0.7

0.6

0.5

IOUT=0mA

IOUT=30mA

IOUT=100mA

IOUT=30mA

IOUT=100mA

2.5

3

3.5

4

4.5

5

5.5

6

1.7

1.8

1.9

2.1

2.3

2.5

Bias Voltage: V_BIAS(V)

XC6601x121

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=1.5V, Ta=25℃

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=1.5V, Ta=25℃

1.4

1.3

1.2

1.1

1.0

1.4

1.3

1.2

1.1

1.0

IOUT=0mA

IOUT=30mA

IOUT=100mA

IOUT=30mA

IOUT=100mA

1.9

2.1

2.3

2.5

3

3.5

4

4.5

5

5.5

6

Bias Voltage: V_BIAS(V)

XC6601x181

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

XC6601x181

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=2.1V, Ta=25℃

2.0

1.9

1.8

1.7

1.6

2.0

1.9

1.8

1.7

1.6

IOUT=0mA

IOUT=30mA

IOUT=100mA

IOUT=30mA

IOUT=100mA

2

2.2

2.4

2.6

2.8

3

3.5

4

4.5

5

5.5

6

Bias Voltage: V_BIAS(V)

15/32

XC6601 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(3) Output Voltage vs. Input Voltage

XC6601x071

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, Ta=25℃

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, Ta=25℃

0.9

0.8

0.7

0.6

0.5

0.9

0.8

0.7

0.6

0.5

IOUT=0mA

IOUT=30mA

IOUT=100mA

IOUT=30mA

IOUT=100mA

1

1.2 1.4 1.6 1.8

2

2.2 2.4 2.6 2.8

3

0.5

0.6

0.7

0.8

0.9

Bias Voltage: V_BIAS(V)

XC6601x121

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, Ta=25℃

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, Ta=25℃

1.4

1.3

1.2

1.1

1.0

1.4

1.3

1.2

1.1

1.0

IOUT=0mA

IOUT=30mA

IOUT=100mA

IOUT=30mA

IOUT=100mA

1

1.1

1.2

1.3

1.4

1.4 1.6 1.8

2

2.2 2.4 2.6 2.8

3

Bias Voltage: V_BIAS(V)

XC6601x181

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, Ta=25℃

2.0

1.9

1.8

1.7

1.6

2.0

1.9

1.8

1.7

1.6

IOUT=0mA

IOUT=30mA

IOUT=100mA

IOUT=30mA

IOUT=100mA

1.6

1.7

1.8

1.9

2

2.2

2.4

2.6

2.8

3

Bias Voltage: V_BIAS(V)

16/32

XC6601

Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

（4）Dropout Voltage vs. Output Current

XC6601B121MR (Vgs^(*1)=2.4V)

XC6601B121MR

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

Ta=25℃

300

250

200

150

100

50

400

300

200

100

0

VBIAS=3.0V

Ta=-40℃

Ta=25℃

Ta=85℃

VBIAS=3.3V

VBIAS=3.6V

VBIAS=4.2V

VBIAS=5.0V

0

100

200

300

400

0

100

200

300

400

ꢀOutput Current: I_OUT(mA)

ꢀOutput Current: IOUT(mA)

XC6601B121MR (Vgs^(*1)=1.8V)

XC6601B121MR (Vgs^(*1)=3.0V)

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.0V

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=4.2V

400

300

200

100

0

400

300

200

100

0

Ta=-40℃

Ta=25℃

Ta=85℃

Ta=25℃

Ta=85℃

0

100

200

300

400

0

100

200

300

400

ꢀOutput Current: I_OUT(mA)

XC6601B121MR (Vgs^(*1)=2.1V)

XC6601B121MR (Vgs^(*1)=3.8V)

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.3V

V_BIAS=5.0V

400

300

200

100

0

400

300

200

100

0

Ta=-40℃

Ta=25℃

Ta=85℃

Ta=25℃

Ta=85℃

0

100

200

300

400

0

100

200

300

400

ꢀOutput Current: I_OUT(mA)

*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T).

A value of the dropout voltage is determined by the value of the Vgs.

17/32

XC6601 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(6) Supply Input Current vs. Input Voltage

(5) Supply Bias Current vs. Bias Voltage

XC6601x071

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=1.0V

XC6601x071

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V

40

30

20

2.0

1.5

1.0

0.5

0.0

Ta=-40℃

Ta=25℃

Ta=85℃

Ta=-40℃

10

Ta=25℃

Ta=85℃

0

0.5

1

1.5

2

2.5

3

0

1

2

3

4

5

6

Bias Voltage: V_BIAS(V)

Input Voltage: V_IN(V)

XC6601x121

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=1.5V

XC6601x121

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V

40

30

20

10

0

3.0

Ta=-40℃

Ta=25℃

Ta=85℃

2.5

2.0

1.5

1.0

0.5

0.0

Ta=-40℃

Ta=25℃

Ta=85℃

0

0.5

1

1.5

2

2.5

3

0

1

2

3

4

5

6

Bias Voltage: V_BIAS(V)

Input Voltage: V_IN(V)

XC6601x181

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=2.1V

XC6601x181

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V

40

30

20

10

0

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Ta=-40℃

Ta=25℃

Ta=85℃

Ta=-40℃

Ta=25℃

Ta=85℃

0

1

2

3

4

5

6

0

0.5

1

1.5

2

2.5

3

Bias Voltage: V_BIAS(V)

Input Voltage: V_IN(V)

18/32

XC6601

Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(7) Output Voltage vs. Ambient Temperature

(8) Supply Bias Current vs. Ambient Temperature

XC6601x071

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=1.0V

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=1.0V

0.73

0.72

0.71

0.70

40

35

30

25

20

15

0.69

IOUT=1mA

IOUT=30mA

0.68

IOUT=100mA

0.67

-50

-25

0

25

50

75

100

-50

-25

0

25

50

75

100

Ambient Temperature: Ta(℃)

XC6601x121

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=1.5V

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=1.5V

1.23

1.22

1.21

1.20

1.19

1.18

1.17

40

35

30

25

20

15

IOUT=1mA

IOUT=30mA

IOUT=100mA

-50

-25

0

25

50

75

100

-50

-25

0

25

50

75

100

Ambient Temperature: Ta(℃)

XC6601x181

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=2.1V

XC6601x181

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=2.1V

1.83

1.82

1.81

1.80

1.79

1.78

1.77

40

35

30

25

20

15

IOUT=1mA

IOUT=30mA

IOUT=100mA

-50

-25

0

25

50

75

100

-50 -25

0

25

50

75

100

Ambient Temperature: Ta(℃)

19/32

XC6601 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(9) Supply Input Current vs. Ambient Temperature

XC6601x071

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=1.0V

2.0

1.5

1.0

0.5

0.0

-50 -25

0

25

50

75

100

Ambient Temperature: Ta(℃)

XC6601x121

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=1.5V

2.0

1.5

1.0

0.5

0.0

-50 -25

0

25

50

75

100

Ambient Temperature: Ta(℃)

XC6601x181

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=2.1V

2.0

1.5

1.0

0.5

0.0

-50

-25

0

25

50

75

100

Ambient Temperature: Ta(℃)

20/32

XC6601

Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(10) Bias Transient Response

XC6601x071

C_IN=1.0μF(ceramic), C_BIAS=0μF(ceramic), C_L=4.7μF(ceramic)

_IN=1.0V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

C_IN=1.0μF(ceramic), C_BIAS=0μF(ceramic), C_L=4.7μF(ceramic)

_IN=1.0V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

V

℃

1.1

1.0

0.9

0.8

0.7

0.6

0.5

5

4

3

2

1

0

-1

1.1

1.0

0.9

0.8

0.7

0.6

0.5

5

4

3

2

1

0

-1

Bias Voltage

Output Voltage

Time (40usec/div)

Time (40μs / div)

Time (40usec/div)

Time (40μs / div)

XC6601x121

C_IN=1.0μF(ceramic), C_BIAS=0μF(ceramic), C_L=4.7μF(ceramic)

XC6601x121

C_IN=1.0μF(ceramic), C_BIAS=0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=1.5V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

℃

V

_IN=1.5V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

℃

1.6

1.5

1.4

1.3

1.2

1.1

1.0

5

4

3

2

1

0

-1

1.6

1.5

1.4

1.3

1.2

1.1

1.0

5

4

3

2

1

0

-1

Bias Voltage

Output Voltage

Time (40usec/div)

Time (40μs / div)

XC6601x181

C_IN=1.0μF(ceramic), C_BIAS=0μF(ceramic), C_L=4.7μF(ceramic)

XC6601x181

C_IN=1.0μF(ceramic), C_BIAS=0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=2.1V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

V_IN=2.1V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

℃

2.2

2.1

2.0

1.9

1.8

1.7

1.6

5

4

3

2

1

0

-1

2.1

2.0

1.9

1.8

1.7

1.6

1.5

5

4

3

2

1

0

-1

Bias Voltage

Output Voltage

Time (40usec/div)

Time (40μs / div)

Time (40usec/div)

Time (40μs / div)

21/32

XC6601 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(11) Input Transient Response

XC6601x071

C_IN=0.1μF(ceramic), C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

C

_IN=0.1μF(ceramic), C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

℃

V_BIAS=3.6V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

℃

1.1

1.0

0.9

0.8

0.7

0.6

0.5

3

1.1

1.0

0.9

0.8

0.7

0.6

0.5

3

Input Voltage

2

1

0

-1

-2

-3

-1

-2

-3

Output Voltage

Time (20usec/div)

Time (20μs / div)

Time (20usec/div)

Time (20μs / div)

XC6601x121

_IN=0.1μF(ceramic), C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

XC6601x121

_IN=0.1μF(ceramic), C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

C

V_BIAS=3.6V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

V_BIAS=3.6V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

℃

1.6

1.5

1.4

1.3

1.2

1.1

1.0

4

1.6

1.5

1.4

1.3

1.2

1.1

1.0

4

Input Voltage

3

2

1

0

Output Voltage

-1

-2

-1

-2

Time (20usec/div)

Time (20μs / div)

Time (20usec/div)

Time (20μs / div)

XC6601x181

_IN=0.1μF(ceramic), C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

XC6601x181

_IN=0.1μF(ceramic), C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

C

V

_BIAS=3.6V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

℃

V

_BIAS=3.6V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

℃

2.2

2.1

2.0

1.9

1.8

1.7

1.6

5

4

3

2

1

0

-1

2.2

2.1

2.0

1.9

1.8

1.7

1.6

5

4

3

2

1

0

-1

Input Voltage

Output Voltage

Time (20usec/div)

Time (20μs / div)

22/32

XC6601

Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(12) Load Transient Response

XC6601B071MR

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V

_BIAS=3.6V, V_IN=1.0V, tr=tf=5.0μsec, Ta=25

℃

V_BIAS=3.6V, V_IN=1.0V, tr=tf=5.0μsec, Ta=25

℃

0.9

0.7

0.5

0.3

0.1

-0.1

500

400

300

200

100

0

0.9

0.7

0.5

0.3

0.1

-0.1

500

400

300

200

100

0

Output Voltage

200mA

10mA

Output Current

100mA

10mA

Time (45usec/div)

Time (45μs / div)

Time (45usec/div)

Time (45μs / div)

XC6601B121MR

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

XC6601B121MR

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=1.5V, tr=tf=5.0μsec, Ta=25

℃

1.4

1.2

1.0

0.8

0.6

0.4

500

400

300

200

100

0

1.4

1.2

1.0

0.8

0.6

0.4

500

400

300

200

100

0

Output Voltage

200mA

Output Current

100mA

10mA

Time (45usec/div)

Time (45μs / div)

XC6601B181MR

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

XC6601B181MR

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V

_BIAS=3.6V, V_IN=2.1V, tr=tf=5.0μsec, Ta=25

℃

V

_BIAS=3.6V, V_IN=2.1V, tr=tf=5.0μsec, Ta=25

℃

2.0

1.8

1.6

1.4

1.2

1.0

500

400

300

200

100

0

2.0

1.8

1.6

1.4

1.2

1.0

500

400

300

200

100

0

Output Voltage

200mA

10mA

Output Current

100mA

10mA

Time (45usec/div)

Time (45μs / div)

23/32

XC6601 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(13) CE Rising Response Time

XC6601x071

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=1.0V, V_BIAS=3.6V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

C

_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=1.0V, V_BIAS=3.6V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

℃

3.0

2.5

2.0

1.5

1.0

0.5

0.0

4

3.0

2.5

2.0

1.5

1.0

0.5

0.0

4

3

CE Input Voltage

2

1

0

Output Voltage

-1

-2

-1

-2

Time (100usec/div)

Time (100μs / div)

Time (100usec/div)

Time (100μs / div)

XC6601x121

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=1.5V, V_BIAS=3.6V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

V_IN=1.5V, V_BIAS=3.6V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

℃

3.0

2.5

2.0

1.5

1.0

0.5

0.0

4

3.0

2.5

2.0

1.5

1.0

0.5

0.0

4

3

CE Input Voltage

Output Voltage

2

1

Output Voltage

0

-1

-2

-1

-2

Time (100usec/div)

Time (100μs / div)

Time (100usec/div)

Time (100μs / div)

XC6601x181

C_IN=C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_IN=2.1V, V_BIAS=3.6V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

V_IN=2.1V, V_BIAS=3.6V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

℃

3.0

2.5

2.0

1.5

1.0

0.5

0.0

4

3.0

2.5

2.0

1.5

1.0

0.5

0.0

4

3

CE Input Voltage

2

1

0

Output Voltage

-1

-2

-1

-2

Time (100usec/div)

Time (100μs / div)

Time (100usec/div)

Time (100μs / div)

24/32

XC6601

Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(14) V_INRising Response Time

XC6601x071

C_IN=0.1μF(ceramic), C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

_BIAS=3.6V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

C_IN=0.1μF(ceramic), C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

_BIAS=3.6V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

V

℃

2.5

2.0

1.5

1.0

0.5

0.0

3

2.5

2.0

1.5

1.0

0.5

0.0

3

2

Input Voltage

1

0

Output Voltage

-1

-2

-1

-2

Time (100usec/div)

Time (100μs / div)

Time (100usec/div)

Time (100μs / div)

XC6601x121

C_IN=0.1μF(ceramic), C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

V_BIAS=3.6V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

℃

2.5

2.0

1.5

1.0

0.5

0.0

3

2.5

2.0

1.5

1.0

0.5

0.0

3

Input Voltage

2

1

Output Voltage

0

-1

-2

-1

-2

Time (100usec/div)

Time (100μs / div)

Time (100usec/div)

Time (100μs / div)

XC6601x181

C_IN=0.1μF(ceramic), C_BIAS=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V, I_OUT=30mA, tr=tf=5.0μsec, Ta=25

V_BIAS=3.6V, I_OUT=200mA, tr=tf=5.0μsec, Ta=25

℃

2.5

2.0

1.5

1.0

0.5

0.0

3

2.5

2.0

1.5

1.0

0.5

0.0

3

Input Voltage

2

1

0

-1

-2

-1

-2

Output Voltage

Time (100usec/div)

Time (100μs / div)

Time (100usec/div)

Time (100μs / div)

25/32

XC6601 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(16) Input Voltage Ripple Rejection Rate

(15) Bias Voltage Ripple Rejection Rate

XC6601x071

C_BIAS=0μF, C_IN=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V_DC+0.2Vp-p_AC, V_IN=1.0V, I_OUT=30mA, Ta=25℃

C_BIAS=1.0μF(ceramic), C_IN=0μF, C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=1.0V_DC+0.2Vp-p_AC, IOUT=30mA, Ta=25℃

80

70

60

50

40

30

20

10

0

80

70

60

50

40

30

20

10

0

0.01

0.1

1

10

100 1000 10000

0.01

0.1

1

10

100 1000 10000

Frequency (kHz)

XC6601x121

C_BIAS=0μF, C_IN=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V_DC+0.2Vp-p_AC, V_IN=1.5V, I_OUT=30mA, Ta=25℃

C_BIAS=1.0μF(ceramic), C_IN=0μF, C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=1.5V_DC+0.2Vp-p_AC, IOUT=30mA, Ta=25℃

80

70

60

50

40

30

20

10

0

70

60

50

40

30

20

10

0

0.01

1

10

100 1000 10000

0.01

0.1

1

10

100 1000 10000

Frequency (kHz)

XC6601x181

C_BIAS=1.0μF(ceramic), C_IN=0μF, C_L=4.7μF(ceramic)

V_BIAS=3.6V, V_IN=2.1V_DC+0.2Vp-p_AC, IOUT=30mA, Ta=25℃

C_BIAS=0μF, C_IN=1.0μF(ceramic), C_L=4.7μF(ceramic)

V_BIAS=3.6V_DC+0.2Vp-p_AC, V_IN=2.1V, I_OUT=30mA, Ta=25℃

80

70

60

50

40

30

20

10

0

70

60

50

40

30

20

10

0

0.01

1

10

100 1000 10000

0.01

0.1

1

10

100 1000 10000

Frequency (kHz)

26/32

XC6601

Series

■PACKAGING INFORMATION

●USP-6C

●USP-6C Reference Pattern Layout

< USP-6C 推奨マウントパッド寸法ꢀ（参照） >

(UNIT : mm)

2.4

0.45

1

2

3

6

5

4

0.05

1.0

< USP-6C 推奨メタルマスクデザインꢀ（参照） >

●USP-6C Reference Metal Mask Design

2.3

0.35

1

2

3

6

5

4

0.15

0.8

Thickness of solder paste: 120μm (reference)

・はんだ厚:120μm (参考)

●SOT-25

●SOT-89-5

(UNIT : mm)

*The side of pins are not gilded, but

nickel is used: Sn 5～15μm

27/32

XC6601 Series

■PACKAGING INFORMATION (Continued)

●

USP-6C Power Dissipation

Power dissipation data for the USP-6C is shown in this page.

The value of power dissipation varies with the mount board conditions.

Please use this data as one of reference data taken in the described condition.

1. Measurement Condition (Reference data)

Condition: Mount on a board

Ambient:

Natural convection

Soldering: Lead (Pb) free

Board:

Dimensions 40 x 40 mm (1600 mm²in one side)

Copper (Cu) traces occupy 50% of the board area

In top and back faces

て

Package heat-sink is tied to the copper traces

Glass Epoxy (FR-4)

Material:

Thickness: 1.6 mm

Through-hole: 4 x 0.8 Diameter

2. Power Dissipation vs. Operating temperature

Evaluation Board (Unit: mm)

Board Mount (Tj max = 125℃)

Ambient Temperature（℃）

Power Dissipation Pd（mW） Thermal Resistance (℃/W)

25

85

1000

100.00

400

Pd-Ta特性グラフ

Pd vs. Ta

1200

1000

800

600

400

200

0

25

45

65

85

105

125

Ambient Temperature Ta (℃)

周辺温度Ta（℃）

28/32

XC6601

Series

■PACKAGING INFORMATION (Continued)

●

SOT-25 Power Dissipation

Power dissipation data for the SOT-25 is shown in this page.

The value of power dissipation varies with the mount board conditions.

Please use this data as one of reference data taken in the described condition.

2. Measurement Condition (Reference data)

Condition: Mount on a board

Ambient:

Natural convection

Soldering: Lead (Pb) free

Board:

Dimensions 40 x 40 mm (1600 mm²in one side)

Copper (Cu) traces occupy 50% of the board area

In top and back faces

Package heat-sink is tied to the copper traces

(Board of SOT-26 is used.)

Material:

Glass Epoxy (FR-4)

Thickness: 1.6 mm

Through-hole: 4 x 0.8 Diameter

2. Power Dissipation vs. Operating temperature

Evaluation Board (Unit: mm)

評価基板レイアウト（単位：mm）

Board Mount (Tj max = 125℃)

Ambient Temperature（℃）

Power Dissipation Pd（mW） Thermal Resistance (℃/W)

25

85

600

240

166.67

Pd-Ta特性グラフ

Pd vs. Ta

700

600

500

400

300

200

100

0

25

45

65

85

105

125

Ambient Temperature Ta (℃)

周辺温度Ta（℃）

29/32

XC6601 Series

■PACKAGING INFORMATION (Continued)

●

SOT-89-5 Power Dissipation

Power dissipation data for the SOT-89-5 is shown in this page.

The value of power dissipation varies with the mount board conditions.

Please use this data as one of reference data taken in the described condition.

3. Measurement Condition (Reference data)

Condition: Mount on a board

Ambient:

Natural convection

Soldering: Lead (Pb) free

Board:

Dimensions 40 x 40 mm (1600 mm²in one side)

て

Copper (Cu) traces occupy 50% of the board area

In top and back faces

Package heat-sink is tied to the copper traces

Glass Epoxy (FR-4)

Material:

Thickness: 1.6 mm

Through-hole: 5 x 0.8 Diameter

2. Power Dissipation vs. Operating temperature

Evaluation Board (Unit: mm)

Board Mount (Tj max = 125℃)

Ambient Temperature（℃）

Power Dissipation Pd（mW） Thermal Resistance (℃/W)

25

85

1300

76.92

520

Pd-Ta特性グラフ

Pd vs. Ta

1400

1200

1000

800

600

400

200

0

25

45

65

85

105

125

Ambient Temperature Ta (℃)

周辺温度Ta（℃）

30/32

XC6601

Series

■MARKING RULE

●SOT25, 89-5, USP6C

① Represents product series

SOT25

MARK

9

PRODUCT SERIES

XC6601******

5

4

①

②

③

④

⑤

② Represents type of regulators

MARK

OUTPUT VOLTAGE RANGE

1

2

3

A

B

XC6601A*****

XC6601B*****

SOT89-5

2

5

4

③ Represents output voltage

OUTPUT

MARK

OUTPUT

VOLTAGE (V)

MARK

VOLTAGE (V)

0

1

2

3

4

5

6

7

8

9

A

B

C

D

E

0.7

0.75

0.8

F

H

K

L

1.45

1.5

1.55

0.85

0.9

1.6

2

1

3

M

N

P

R

S

T

1.65

0.95

1.0

1.7

USP6C

1.75

1.05

1.1

1.8

-

1.15

1.2

U

V

X

Y

Z

1.25

1.3

1.35

1.4

④,⑤ Represents production lot number

01～09、0A～0Z、11･･･9Z、A1～A9、

AA･･･Z9、ZA～ZZ repeated

(G，I，J，O，Q，W excepted)

*No character inversion used.

31/32

XC6601 Series

1. The products and product specifications contained herein are subject to change without

notice to improve performance characteristics. Consult us, or our representatives

before use, to confirm that the information in this datasheet is up to date.

2. We assume no responsibility for any infringement of patents, patent rights, or other

rights arising from the use of any information and circuitry in this datasheet.

3. Please ensure suitable shipping controls (including fail-safe designs and aging

protection) are in force for equipment employing products listed in this datasheet.

4. The products in this datasheet are not developed, designed, or approved for use with

such equipment whose failure of malfunction can be reasonably expected to directly

endanger the life of, or cause significant injury to, the user.

(e.g. Atomic energy; aerospace; transport; combustion and associated safety

equipment thereof.)

5. Please use the products listed in this datasheet within the specified ranges.

Should you wish to use the products under conditions exceeding the specifications,

please consult us or our representatives.

6. We assume no responsibility for damage or loss due to abnormal use.

prior permission of TOREX SEMICONDUCTOR LTD.

32/32


型号：	XC6601A08BPR
厂家：	Torex Semiconductor
描述：	Low Voltage Input LDO Voltage Regulators 低电压输入LDO稳压器稳压器
文件：	总32页 (文件大小：625K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

XC6601A08BPR [TOREX]

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