2SA1811TPE6 [TOSHIBA]

TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal;
2SA1811TPE6
元器件型号: 2SA1811TPE6
生产厂家: TOSHIBA SEMICONDUCTOR    TOSHIBA SEMICONDUCTOR
描述和应用:

TRANSISTOR 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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PDF文件: 总2页 (文件大小:66K)
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型号参数:2SA1811TPE6参数

2SA1812

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)

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139 ROHM

2SA1812

High-voltage Switching Transistor (-400V, -0.5A)

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37 ROHM

2SA1812

High breakdown voltage. Low saturation voltage.Collector-base voltage VCBO -400 V

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21 TYSEMI

2SA1812_1

High-voltage Switching Transistor ( 400V, 0.5A)

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6 ROHM

2SA1812N

TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | SOT-89

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46 ETC

2SA1812P

TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | SOT-89

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13 ETC

2SA1812Q

TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | SOT-89

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19 ETC

2SA1812T100/N

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/N

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/NP

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/NP

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/NQ

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/NQ

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/PQ

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM

2SA1812T100/PQ

Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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0 ROHM