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元器件品牌
2SC4210YTE85R
[TOSHIBA]
TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal;
元器件型号:
2SC4210YTE85R
生产厂家:
TOSHIBA SEMICONDUCTOR
描述和应用:
TRANSISTOR 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
放大器 光电二极管 晶体管
PDF文件:
总2页 (文件大小:57K)
下载文档:
下载PDF数据表文档文件
型号参数:2SC4210YTE85R参数
查看货源
2SC4211
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR
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156
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61
ETC
2SC4211-5
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR
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156
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21
ETC
2SC4211-6
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR
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156
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34
ETC
2SC4211-7
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR
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156
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30
ETC
2SC4212
Silicon NPN triple diffusion planar type
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156
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113
PANASONIC
2SC4212
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN
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156
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0
PANASONIC
2SC4213
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
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156
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53
TOSHIBA
2SC4213
Silicon NPN Epitaxial
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156
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28
KEXIN
2SC4213
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
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156
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47
TOSHIBA
2SC4213
High emitter-base voltage: VEBO = 25 V (min). High DC current gain: hFE = 200 1200.
Warning
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156
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13
TYSEMI
2SC4213_07
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
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156
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9
TOSHIBA
2SC4213A
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SC-70
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16
ETC
2SC4213A
For Muting and Switching Applications
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156
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11
TOSHIBA
2SC4213-A
TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal
Warning
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156
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1
TOSHIBA
2SC4213-A(T5LUPTLF
Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
Warning
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156
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0
TOSHIBA
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