2SJ338-Y(2-7B1B) [TOSHIBA]

TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power;
2SJ338-Y(2-7B1B)
型号: 2SJ338-Y(2-7B1B)
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power

放大器 晶体管
文件: 总3页 (文件大小:138K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SJ338  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
2SJ338  
Audio Frequency Power Amplifier Application  
Unit: mm  
High breakdown voltage  
: V = 180 V  
DSS  
High forward transfer admittance  
Complementary to 2SK2162  
: |Y | = 0.7 S (typ.)  
fs  
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drainsource voltage  
Gatesource voltage  
Drain current  
V
V
180  
±20  
V
V
DSS  
GSS  
(Note 1)  
I
1  
A
D
Power dissipation (Tc = 25°C)  
Channel temperature  
P
20  
W
°C  
°C  
D
ch  
stg  
T
150  
Storage temperature range  
T
55~150  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
JEDEC  
JEITA  
SC-64  
TOSHIBA  
2-7B1B  
Marking  
Weight: 0.36 g (typ.)  
J338  
Part No. (or abbreviation code)  
Lot No.  
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
JEDEC  
JEITA  
SC-64  
TOSHIBA  
2-7J1B  
Weight: 0.36 g (typ.)  
1
2004-07-06  
2SJ338  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
= 0, V = ±20 V  
GS  
Min  
Typ.  
Max  
Unit  
I
V
±100  
nA  
V
GSS  
DS  
Drainsource breakdown voltage  
V
V
I
D
= 10 mA, V = 0  
GS  
180  
(BR) DSS  
GS (OFF)  
Gatesource cutoff voltage  
V
DS  
= 10 V, I = 10 mA  
0.8  
2.8  
V
D
(Note 2)  
Drainsource saturation voltage  
Forward transfer admittance  
Input capacitance  
V
I
= 0.6 A, V = 10 V  
GS  
1.2  
0.7  
210  
90  
3.0  
V
S
DS (ON)  
D
|Y |  
fs  
V
V
V
V
= 10 V, I = 0.3 A  
D
DS  
DS  
DS  
DS  
C
= 10 V, V  
= 10 V, V  
= 10 V, V  
= 0 , f = 1 MHz  
= 0 , f = 1 MHz  
= 0 , f = 1 MHz  
iss  
GS  
GS  
GS  
pF  
Output capacitance  
C
oss  
Reverse transfer capacitance  
Q
45  
rss  
Note 2: V  
GS (OFF)  
Classification  
O: 0.8~1.6, Y: 1.4~2.8  
This transistor is the electrostatic-sensitive device.  
Please handle with caution.  
2
2004-07-06  
2SJ338  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
3
2004-07-06  

相关型号:

2SJ338-Y(TE16R1)

TRANSISTOR,MOSFET,P-CHANNEL,180V V(BR)DSS,1A I(D),TO-252
TOSHIBA

2SJ338-Y(TE16R1,Q)

TRANSISTOR,MOSFET,P-CHANNEL,180V V(BR)DSS,1A I(D),TO-252
TOSHIBA

2SJ338O

TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-7J1B, 3 PIN, FET General Purpose Power
TOSHIBA

2SJ338TE16R

TRANSISTOR 1 A, 180 V, 5 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
TOSHIBA

2SJ338Y

TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-7J1B, 3 PIN, FET General Purpose Power
TOSHIBA

2SJ338Y(SM)

暂无描述
TOSHIBA

2SJ338_07

Audio-Frequency Power Amplifier Applications
TOSHIBA

2SJ339

Ultrahigh-Speed Switching Applications
SANYO

2SJ340

Ultrahigh-Speed Switching Applications
SANYO

2SJ341

Power Field-Effect Transistor, 5A I(D), 20V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-126, TO-126FM, 3 PIN
HITACHI

2SJ342

P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
TOSHIBA

2SJ342_07

High Speed Switching, Analog Switch Applications
TOSHIBA