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元器件品牌
GT30J121_06
[TOSHIBA]
Silicon N Channel IGBT High Power Switching Applications; 硅N沟道IGBT高功率开关应用
元器件型号:
GT30J121_06
生产厂家:
TOSHIBA SEMICONDUCTOR
描述和应用:
Silicon N Channel IGBT High Power Switching Applications
硅N沟道IGBT高功率开关应用
开关 双极性晶体管
PDF文件:
总6页 (文件大小:182K)
下载文档:
下载PDF数据表文档文件
型号参数:GT30J121_06参数
查看货源
GT30J122
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
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on line
156
-
273
TOSHIBA
GT30J122A
Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
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156
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126
TOSHIBA
GT30J126
High Power Switching Applications Fast Switching Applications
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on line
156
-
46
TOSHIBA
GT30J301
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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on line
156
-
180
TOSHIBA
GT30J311
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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156
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46
TOSHIBA
GT30J322
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
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: Undefined variable $rtag in
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on line
156
-
453
TOSHIBA
GT30J324
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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: Undefined variable $rtag in
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on line
156
-
88
TOSHIBA
GT30J324
Silicon N Channel IGBT High Power Switching Applications
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: Undefined variable $rtag in
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156
-
29
TOSHIBA
GT30J324
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Warning
: Undefined variable $rtag in
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on line
156
-
38
TOSHIBA
GT30J324(Q)
IGBT DUAL 600V 30A TO-3PN
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: Undefined variable $rtag in
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on line
156
-
0
TOSHIBA
GT30J324_06
Silicon N Channel IGBT High Power Switching Applications
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: Undefined variable $rtag in
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on line
156
-
18
TOSHIBA
GT30J341
Discrete IGBTs Silicon N-Channel IGBT
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: Undefined variable $rtag in
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156
-
31
TOSHIBA
GT30J341,Q
Insulated Gate Bipolar Transistor
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on line
156
-
0
TOSHIBA
GT3-16DP-2.5DSA
Antenna, Sensor, and Communications Trunk Line Connections
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156
-
44
HRS
GT3-16DP-2.5DSA(70)
Board Connector, 16 Contact(s), 2 Row(s), Male, Straight, 0.098 inch Pitch, Solder Terminal, Locking, Black Insulator
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156
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0
HRS
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