GT50N322A [TOSHIBA]
TRANSISTOR 50 A, 1000 V, N-CHANNEL IGBT, LEAD FREE, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor;
| 型号： | GT50N322A |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 50 A, 1000 V, N-CHANNEL IGBT, LEAD FREE, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总6页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GT50N322A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50N322A
Voltage Resonance Inverter Switching Application
Unit: mm
Fifth Generation IGBT
•
•
•
FRD included between emitter and collector
Enhancement mode type
High speed IGBT : t = 0.10 μs (typ.) (I = 60 A)
f
C
FRD : t = 0.8 μs (typ.) (di/dt = −20 A/μs)
rr
•
Low saturation voltage: V
= 2.2 V (typ.) (I = 60 A)
CE (sat) C
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
1000
± 25
50
V
V
CES
GES
DC
1ms
DC
I
C
Collector current
A
I
120
15
CP
JEDEC
JEITA
⎯
⎯
I
F
Diode forward current
A
1ms
I
120
FP
TOSHIBA
2-16C1C
Collector power dissipation
(Tc = 25°C)
P
156
W
C
Weight: 4.6 g (typ.)
Junction temperature
Storage temperature
T
150
°C
°C
j
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Equivalent Circuit
Marking
Collector
TOSHIBA
Gate
50N322A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Emitter
1
2008-01-11
GT50N322A
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±25 V, V
= 0
⎯
⎯
3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
± 500
1.0
6.0
2.8
⎯
nA
mA
V
GES
GE
CE
CE
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
I
= 1000 V, V
= 0
CES
GE
V
I
I
= 60 mA, V
= 5 V
⎯
GE (OFF)
C
C
CE
= 15 V
V
= 60 A, V
2.2
4000
0.23
0.33
0.10
0.70
1.2
0.8
⎯
V
CE (sat)
GE
= 10 V, V = 0, f = 1 MHz
GE
C
V
pF
ies
CE
t
⎯
Resistive Load
Rise time
r
Turn-on time
Switching time
t
V
V
= 600 V, I = 60 A
⎯
on
CC
GG
C
μs
= ±15 V, R = 51 Ω
Fall time
t
f
0.25
⎯
G
(Note 1)
Turn-off time
Diode forward voltage
Reverse recovery time
Thermal Resistance
t
off
V
I
I
= 15 A, V
= 0
1.9
⎯
V
F
F
F
GE
GE
t
= 15 A, V
= 0, di/dt = − 20 A/μs
µs
rr
Rth(j-c)
Rth(j-c)
⎯
⎯
0.8
4.0
°C/W
°C/W
Thermal Resistance
⎯
Note 1: Switching time measurement circuit and input/output waveforms
V
GE
90%
10%
0
0
R
G
I
C
0
90%
90%
V
CC
10%
10%
V
CE
t
f
t
r
t
off
t
on
2
2008-01-11
GT50N322A
I
– V
I
– V
CE
C
CE
C
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Common emitter
Common emitter
10
20
10
20
8
Tc = −40°C
Tc = 25°C
8
15
15
V
= 7 V
V
= 7 V
GE
GE
0
1
2
3
4
5
0
1
2
3
4
5
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
– V
I – V
C GE
C
CE
120
100
80
60
40
20
0
120
100
80
60
40
20
0
Common emitter
Common emitter
V = 5 V
CE
20
Tc = 125°C
25
10
−40
15
8
Tc = 125°C
V
= 7 V
GE
0
1
2
3
4
5
0
2
4
6
8
10
Gate-emitter voltage
V
(V)
GE
Collector-emitter voltage
V
(V)
CE
V
– Tc
V
V
– Q
CE (sat)
CE, GE G
5
4
3
200
150
100
50
20
Common emitter
= 2.5 Ω
Tc = 25°C
Common emitter
= 15 V
R
L
V
GE
15
10
5
100
80
60
40
V
= 150 V
CE
2
1
I
= 20 A
C
50
100
0
−50
0
0
200
0
50
100
150
0
50
100
150
Case temperature Tc (°C)
Gate charge
Q
G
(nC)
3
2008-01-11
GT50N322A
Switching Time – R
C – V
CE
G
10
10000
1000
100
Common emitter
V
= 600 V
CC
I
= 60 A
C
C
ies
V
= ±15 V
GG
t
t
Tc = 25°C
off
1
t
on
r
t
f
0.1
0.01
Common emitter
= 0
C
oes
V
GE
f = 1 MHz
Tc = 25°C
C
res
10
1
1
10
100
1000
10
100
V
1000
Gate resistance
R
G
(Ω)
Collector-emitter voltage
(V)
CE
Switching Time – I
Safe Operating Area
C
10
1000
300
*: Single non-repetitive
pulse Tc = 25°C
Curves must be derated linearly with
increases in temperature.
Common emitter
V
= 600 V
= 51 Ω
CC
R
G
V
= ±15 V
GG
I
max (pulsed) *
C
Tc = 25°C
1
100
I
max
C
10 μs*
(continuous)
t
off
30
10
t
on
t
r
1 ms*
100 μs*
0.1
0.01
t
DC operation
f
3
1
10 ms*
0
20
40
60
80
1
3
10
30
100
300 1000 3000 10000
Collector-emitter voltage
V
(V)
CE
Collector current
I
C
(A)
Reverse Bias SOA
I – V
F
F
300
100
100
80
T ≤ 125°C
j
Common emitter
V
= ±15 V
GE
= 10 Ω
V
= 0
GE
R
G
50
30
60
40
10
5
3
20
0
−40
Tc = 125°C
25
1
10
30
100
300
1000
(V)
30000
0
0.5
1.0
1.5
2.0
2.5
Collector-emitter voltage
V
Forward voltage
V
(V)
CE
F
4
2008-01-11
GT50N322A
r
– t
I , t – I
rr rr
th (j−c )
w
F
2
1
0
1
2
3
10
9
2
10
10
Common emitter
Tc = 25°C
di/dt = −20 A/μs
Tc = 25°C
1.6
1.2
Diode stage
IGBT stage
10
8
7
t
rr
−
0.8
0.4
10
I
rr
−
10
10
6
−
5
0
0
100
5
4
3
2
1
−
10
0
1
2
−
−
−
−
10
10
10
10
10
10
10
20
40
60
I
80
Pulse width
t
(s)
Forward current
(A)
w
F
I , t – di/dt
rr rr
50
40
1
Common emitter
= 60 A
Tc = 25°C
I
F
t
rr
0.8
0.6
0.4
30
20
I
rr
10
0
0.2
0
0
−50
−100
−150
−200
−250
di/dt (A/μs)
5
2008-01-11
GT50N322A
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2008-01-11
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