HN2S01FU_07 [TOSHIBA]
Low Voltage High Speed Switching Application; 低压高速开关应用![HN2S01FU_07](http://pdffile.icpdf.com/pdf1/p00113/img/icpdf/HN2S01FU_618056_icpdf.jpg)
型号: | HN2S01FU_07 |
厂家: | ![]() |
描述: | Low Voltage High Speed Switching Application |
文件: | 总3页 (文件大小:198K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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HN2S01FU
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S01FU
Low Voltage High Speed Switching Application
Unit: mm
z HN2S01FU is composed of 3 independent diodes.
z Low reverse current: V = 0.23V (typ.) @I = 5mA
F
F
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
V
15
10
V
V
RM
V
R
Maximum (peak) forward current
Average forward current
Surge current (10ms)
I
200 *
100 *
1 *
mA
mA
A
FM
I
O
I
FSM
P
Power dissipation
200 *
125
mW
°C
°C
°C
Junction temperature
T
j
Storage temperature range
Operating temperature range
T
−55∼125
−40∼100
stg
opr
JEDEC
―
―
T
EIAJ
TOSHIBA
Weight: 6.2mg
1-2T1C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the absolute maximum ratings
per diodes is 75 % of the single diode one.
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= 1mA
Min
Typ.
Max
Unit
V
V
V
V
―
I
I
I
―
―
―
―
0.18
0.23
0.35
―
―
0.30
0.50
20
F (1)
F (2)
F (3)
F
F
F
Forward voltage
―
= 5mA
= 100mA
= 10V
―
Reverse current
I
―
V
V
μA
R
R
―
Total capacitance
C
= 0, f = 1MH
z
―
20
40
T
R
pF
1
2007-11-01
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
HN2S01FU
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, ment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither inteted for usage in equipment that requires
extraordinarily high quality and/or reliability or a mre of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended omic energy control instruments, airplane or
spaceship instruments, transportation instrumentstruments, combustion control instruments,
medical instruments, all types of safety devicesUsage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• No
mhich
lis of
• coHS
eions
nsses
a
Pin Assignment (Top View)
Marking
2
2007-11-01
HN2S01FU
3
2007-11-01
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