HN2S01FU_07 [TOSHIBA]

Low Voltage High Speed Switching Application; 低压高速开关应用
HN2S01FU_07
型号: HN2S01FU_07
厂家: TOSHIBA    TOSHIBA
描述:

Low Voltage High Speed Switching Application
低压高速开关应用

开关
文件: 总3页 (文件大小:198K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HN2S01FU  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
HN2S01FU  
Low Voltage High Speed Switching Application  
Unit: mm  
z HN2S01FU is composed of 3 independent diodes.  
z Low reverse current: V = 0.23V (typ.) @I = 5mA  
F
F
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse Voltage  
Reverse voltage  
V
15  
10  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
200 *  
100 *  
1 *  
mA  
mA  
A
FM  
I
O
I
FSM  
P
Power dissipation  
200 *  
125  
mW  
°C  
°C  
°C  
Junction temperature  
T
j
Storage temperature range  
Operating temperature range  
T
55125  
40100  
stg  
opr  
JEDEC  
T
EIAJ  
TOSHIBA  
Weight: 6.2mg  
1-2T1C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).  
In the case of using 2 ro 3 diodes, the absolute maximum ratings  
per diodes is 75 % of the single diode one.  
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.18  
0.23  
0.35  
0.30  
0.50  
20  
F (1)  
F (2)  
F (3)  
F
F
F
Forward voltage  
= 5mA  
= 100mA  
= 10V  
Reverse current  
I
V
V
μA  
R
R
Total capacitance  
C
= 0, f = 1MH  
z
20  
40  
T
R
pF  
1
2007-11-01  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
HN2S01FU  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, ment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither inteted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a mre of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended omic energy control instruments, airplane or  
spaceship instruments, transportation instrumentstruments, combustion control instruments,  
medical instruments, all types of safety devicesUsage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
No  
mhich  
lis of  
coHS  
eions  
nsses  
a
Pin Assignment (Top View)  
Marking  
2
2007-11-01  
HN2S01FU  
3
2007-11-01  

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