JDV3S26CT [TOSHIBA]
DIODE UHF BAND, 15.8 pF, SILICON, VARIABLE CAPACITANCE DIODE, LEAD FREE, CST3, 1-1S1A, 3 PIN, Variable Capacitance Diode;
| 型号： | JDV3S26CT |
| 厂家： | 
TOSHIBA |
| 描述： | DIODE UHF BAND, 15.8 pF, SILICON, VARIABLE CAPACITANCE DIODE, LEAD FREE, CST3, 1-1S1A, 3 PIN, Variable Capacitance Diode 二极管 |
| 文件： | 总3页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JDV3S26CT
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV3S26CT
VCO for UHF Band Radio
Unit: mm
0.6±0.05
0.5±0.03
•
•
•
•
High capacitance ratio: C /C = 2.9 (typ.)
1V 4V
Low series resistance: r = 0.37 Ω (typ.)
s
３
This device is suitable for use in small tuners.
Lead (Pb)-free.
１
２
Maximum Ratings
=
(Ta 25°C)
0.05±0.03
0.35
0.15±0.03
Characteristic
Symbol
Rating
Unit
Reverse voltage
V
10
150
V
R
Junction temperature
T
°C
°C
j
Storage temperature range
T
stg
−55~150
1.Anode
2.NC
CST3
3.Cathode
JEDEC
―
―
JEITA
TOSHIBA
1-1S1A
Weight: 0.00075 g (typ.)
Electrical Characteristics
=
(Ta 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
Reverse current
V
I
= 1 µA
R
10
⎯
⎯
⎯
⎯
1
V
R
I
C
C
V
V
V
= 5 V
nA
R
R
R
R
= 1 V, f = 1 MHz
= 4 V, f = 1 MHz
⎯
15.35
5.27
2.82
⎯
⎯
16.31
5.6
3
1V
4V
Capacitance
pF
⎯
Capacitance ratio
Series resistance
C
/C
1V 4V
⎯
⎯
Ω
r
s
V
= 1 V, f = 470 MHz
0.37
0.52
R
Note: Signal level when capacitance is measured. V = 100 mVrms
sig
Marking
2
1
3
6 0
1
2005-11-07
JDV3S26CT
C
V
– V
r – V
s R
R
100
10
1
1.0
0.8
0.6
0.4
0.2
0.0
f =470MHz
f =1MHz
Ta=25
Ta=25
℃
℃
0
1
2
3
4
5
6
7
0.1
1
10
REVERSE VOLTAGE
V
R
(V)
REVERSE VOLTAGE
V
R
(V)
2
2005-11-07
JDV3S26CT
3
2005-11-07
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