MG100Q2YS65H [TOSHIBA]
TOSHIBA IGBT Module Silicon N Channel IGBT; 东芝IGBT模块的硅N沟道IGBT
| 型号： | MG100Q2YS65H |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA IGBT Module Silicon N Channel IGBT |
| 文件： | 总6页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MG100Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG100Q2YS65H
High Power & High Speed Switching
Unit: mm
Applications
·
·
·
High input impedance
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
E1
E2
C1
E2
JEDEC
―
―
G1 E1/C2
G2
JEITA
TOSHIBA
2-95A4A
Weight: 255 g (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
1200
±20
100
200
100
200
V
V
CES
GES
DC
Collector current
1 ms
I
C
A
A
I
CP
DC
Forward current
I
F
1 ms
I
FM
Collector power dissipation
P
690
W
C
(Tc = 25°C)
Junction temperature
T
150
°C
j
Storage temperature range
T
-40 to 125
°C
stg
2500
Isolation voltage
V
Isol
V
(AC 1 minute)
Terminal
Screw torque
¾
¾
3
3
N▪m
Mounting
1
2002-10-04
MG100Q2YS65H
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±20 V, V = 0
Min
Typ.
Max
Unit
I
V
V
¾
¾
4.0
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
±500
2.0
7.0
4.0
¾
nA
mA
V
GES
GE
CE
CE
Collector cut-off current
I
= 1200 V, V
= 0
GE
CES
Gate-emitter cut-off voltage
V
I
= 100 mA, V = 5 V
¾
GE (off)
C
CE
Tc = 25°C
3.0
I
= 100 A,
C
Collector-emitter saturation voltage
V
V
CE (sat)
V
V
= 15 V
GE
Tc = 125°C
3.6
Input capacitance
Turn-on delay time
Rise time
C
ies
= 10 V, V
= 0, f = 1 MHz
GE
8500
0.05
0.05
0.10
0.55
0.05
0.60
2.4
¾
pF
CE
t
¾
d (on)
t
¾
r
Inductive load
Turn-on time
Switching time
t
¾
on
V
V
= 600 V, I = 100 A
CC
GE
C
ms
= ±15 V, R = 9.1 W
Turn-off delay time
t
¾
G
d (off)
Fall time
Turn-off time
t
0.15
¾
f
t
off
Forward voltage
V
I
I
= 100 A, V
= 0
3.5
V
F
F
F
GE
GE
= 100 A, V
= -10 V,
Reverse recovery time
Thermal resistance
t
¾
0.1
¾
ms
rr
di/dt = 700 A/ms
Transistor stage
Diode stage
¾
¾
¾
¾
0.18
0.41
R
°C/W
mJ
th (j-c)
Inductive load
Turn-on
Switching loss
E
E
¾
¾
10
8
¾
on
off
V
V
= 600 V, I = 100 A
C
CC
GE
= ±15 V, R = 9.1 W
G
Turn-off
¾
Tc = 125°C
Note: Switching time measurement circuit and input/output waveforms
V
GE
0
R
G
90%
I
F
10%
-V
GE
V
t
CC
rr
L
I
C
I
C
0
90%
90%
R
G
V
CE
10%
10%
t
d (on)
t
t
f
t
r
d (off)
t
on
t
off
2
2002-10-04
MG100Q2YS65H
I
– V
CE (sat)
I
– V
C
C
CE (sat)
15 V
200
150
100
50
200
150
100
50
20 V
20 V
12 V
18 V
15 V
12 V
10 V
18 V
10 V
P
C
= 690 W
V
GE
= 8 V
V
GE
= 8 V
Common emitter
Common emitter
Tc = 25°C
Tc = 125°C
0
0
0
2
4
6
8
10
20
16
0
2
4
6
8
10
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
V
– V
V
– V
CE GE
CE
GE
12
10
8
12
10
8
Common emitter
Tc = 25°C
Common emitter
Tc = 125°C
6
6
I
= 200 A
C
I
= 200 A
C
100 A
50 A
4
4
100 A
2
2
50 A
0
0
0
4
8
12
16
0
4
8
12
16
20
Gate-emitter voltage
V
(V)
Gate-emitter voltage
V
(V)
GE
GE
I
– V
I – V
F F
C
GE
200
150
100
50
200
150
100
50
Common emitter
= 5 V
Common cathode
V
CE
V
GE
= 0
-40°C
Tc = 125°C
Tc = 25°C
-40°C
25°C
125°C
1
0
0
0
4
8
12
(V)
0
2
3
4
5
Gate-emitter voltage
V
Forward voltage
V
(V)
GE
F
3
2002-10-04
MG100Q2YS65H
Switching time – I
Switching time – I
C
C
1
1
Common emitter
: Tc = 25°C
: Tc = 125°C
V
V
= 600 V
= ±15 V
= 9.1 W
CC
GE
R
G
t
t
off
d (off)
t
on
0.1
0.1
t
r
Common emitter
t
V = 600 V
CC
V = ±15 V
GE
= 9.1 W
f
t
d (on)
: Tc = 25°C
R
G
: Tc = 125°C
0.01
0.01
10
30
Collector current
100
10
30
100
I
C
(A)
Collector current
I
C
(A)
Switching time – R
Switching time – R
G
G
1
10
1
Common emitter
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
V
= 600 V
CC
I
= 100 A
C
V
GE
= ±15 V
t
t
on
d (on)
t
off
t
r
0.1
t
d (off)
0.1
0.01
Common emitter
t
f
V
= 600 V
CC
I
= 100 A
= ±15 V
C
V
GE
0.01
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Gate resistance
R
(9)
Gate resistance
R
(9)
G
G
Switching loss – I
Switching loss – R
C
G
100
10
1
100
10
1
Common emitter
Common emitter
: Tc = 25°C
: Tc = 125°C
V
V
R
= 600 V
= ±15 V
= 9.1 W
CC
GE
G
V
= 600 V
= 100 A
= ±15 V
CC
I
C
V
GE
E
on
E
on
E
off
E
off
E
dsw
: Tc = 25°C
: Tc = 125°C
E
dsw
0.1
1
10
Collector current
100
1
10
Gate resistance
100
I
C
(A)
R
(9)
G
4
2002-10-04
MG100Q2YS65H
V
, V
– Q
C – V
CE
CE GE
G
1600
1200
800
400
0
16
12
8
100000
10000
1000
Common emitter
= 6 W
R
L
Tc = 25°C
C
C
ies
V
= 0
CE
oes
Cres
200 V
600 V
400 V
Common emitter
= 0
f = 1 MHz
4
V
GE
Tc = 25°C
100
0
200
400
Charge Q
600
800
1000
1400
10
0.01
0.1
1
10
100
(nC)
Collector-emitter voltage
V
(V)
G
CE
Short circuit SOA
Reverse bias SOA
6
5
4
3
2
1
0
1000
100
10
<
1
V
T
900 V
=
CC
<
=
T
125°C
j
<
125°C
=
j
V
R
= ±15 V
= 9.1 W
GE
G
t
= 5 ms
w
0.1
0
200
400
600
800
1000
1200
(V)
0
200
400
600
800
1000
1200
(V)
1400
Collector-emitter voltage
V
Collector-emitter voltage
V
CE
CE
R
th (t)
– t
w
10
1
Diode stage
Transistor stage
0.1
0.01
0.001
Tc = 25°C
0.001
0.01
0.1
Pulse width
1
t
w
(s)
5
2002-10-04
MG100Q2YS65H
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-10-04
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