MG150J7KS50 [TOSHIBA]
TOSHIBA GTR Module Silicon N Channel IGBT; 东芝GTR模块硅N沟道IGBT
| 型号： | MG150J7KS50 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA GTR Module Silicon N Channel IGBT |
| 文件： | 总6页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MG150J7KS50
TOSHIBA GTR Module Silicon N Channel IGBT
MG150J7KS50
High Power Switching Applications
Motor Control Applications
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The electrodes are isolated from case.
High input impedance
7 IGBTs built into 1 package.
Enhancement-mode
High speed type IGBT : Inverter stage
: V
= 2.8V (max) (@I = 150A)
C
CE (sat)
: t = 0.5µs (max) (@I = 150A)
f
C
F
: t = 0.3µs (max) (@I = 150A)
rr
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Outline
Weight: 520g
: TOSHIBA 2-110A1B
Equivalent Circuit
1
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MG150J7KS50
Inverter Stage
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
V
V
600
±20
V
V
CES
GES
DC
Collector current
1ms
I
150
C
A
A
I
300
CP
DC
Forward current
1ms
I
150
F
I
300
FM
Collector power dissipation (Tc = 25°C)
Junction temperature
P
320
W
°C
°C
C
T
150
j
Storage temperature range
T
−40 ~ 125
stg
2500
Isolation voltage
V
V
Isol
(AC 1 min.)
Screw torque (Terminal / mounting)
―
3 / 3
N·m
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±20V, V = 0
Min
Typ.
Max
Unit
I
V
V
V
―
―
―
―
±500
1.0
nA
mA
V
GES
GE
CE
CE
CE
Collector-emitter cut-off current
Gate-emitter cut-off voltage
I
= 600V, V
= 0
GE
CES
V
= 5V, I = 15mA,
5.0
―
―
8.0
GE (off)
CE (sat)
C
Collector-emitter saturation voltage
V
I
= 150A, V
= 15V
GE
2.2
2.8
V
C
V
= 10V, V
= 0V,
GE
CE
Input capacitance
C
―
12.0
―
nF
V
ies
f = 1MHz
= 150A
Forward voltage
Rise time
V
I
―
―
―
―
―
―
―
―
―
2.5
0.15
0.23
0.25
0.50
0.15
―
3.5
0.3
F
F
t
r
Inductive load
V
= 300V
Turn-on time
t
0.46
0.50
1.00
0.30
0.39
1.00
―
CC
on
I
= 150A
C
Switching time
µs
Fall time
t
f
V
= ±15V
GE
G
R
= 9.2Ω
Turn-off time
t
off
(Note 1)
(Note 2)
Reverse recovery time
trr
Transistor stage
Diode stage
Case to fin
R
th (j-c)
Thermal resistance
°C / W
―
R
th (c-f)
0.05
Note 2: Silicone grease is applied.
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MG150J7KS50
Brake Stage
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
V
V
600
±20
V
V
V
CES
GES
V
600
R
DC
Collector current
1ms
I
50
C
A
A
I
I
100
CP
DC
Forward current
1ms
I
50
F
100
FM
Collector power dissipation (Tc = 25°C)
Junction temperature
P
120
W
°C
°C
C
T
150
j
Storage temperature range
T
−40 ~ 125
stg
2500
Isolation voltage
V
V
Isol
(AC 1 min.)
Screw torque (Terminal / mounting)
―
3 / 3
N·m
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±20V, V = 0V
Min
Typ.
Max
UNIT
I
V
V
V
―
―
5.0
―
―
―
―
―
―
―
―
―
―
―
―
―
―
±500
1.0
nA
mA
V
GES
GE
CE
CE
CE
Collector-emitter cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
I
= 600V, V
= 0V
GE
CES
V
= 5V, I = 5mA,
―
8.0
GE (off)
CE (sat)
C
V
I
= 50A, V
= 15V
GE
2.0
4.0
―
2.5
V
C
C
I
V
V
= 10V, V = 0V, f = 1MHz
GE
―
nF
mA
V
ies
CE
Reverse current
= 600V
1.0
R
R
Forward voltage
V
I
= 150A
F
2.2
0.08
0.10
0.22
0.50
0.23
―
2.8
F
Rise time
t
0.16
0.20
0.44
1.00
0.35
1.04
2.00
―
r
Inductive load
V
= 300V
Turn-on time
t
t
CC
on
I
= 50A
C
Switching time
µs
Fall time
t
f
V
= ±15V
GE
G
R
= 24Ω
Turn-off time
off
(Note 1)
Reverse recovery time
trr
Transistor stage
Diode stage
Case to fin
R
th (j-c)
Thermal resistance
°C / W
―
R
th (c-f)
(Note 2)
0.05
Note 2: Silicone grease is applied.
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MG150J7KS50
Note 1: Switching Time Test Circuit &Timing Chat
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MG150J7KS50
Package Dimensions
TOSHIBA 2-110A1B
Unit: mm
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2001-08-16
MG150J7KS50
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2001-08-16
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