MP4006 [TOSHIBA]
Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1); 硅NPN及PNP外延型（ 1达林顿功率晶体管4 ）
| 型号： | MP4006 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) |
| 文件： | 总7页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MP4006
TOSHIBA Power Transistor Module
Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4006
Industrial Applications
High Power Switching Applications.
Unit: mm
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
·
·
Small package by full molding (SIP 10 pin)
High collector power dissipation (4 devices operation)
: I
= ±2 A (max)
C (DC)
High DC current gain: h
·
= 2000 (min) (V
CE
= ±2 V, I = ±1 A)
C
FE
Maximum Ratings (Ta = 25°C)
Rating
Characteristics
Symbol
Unit
NPN
80
80
8
PNP
−80
−80
−8
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
CBO
V
CEO
V
EBO
V
V
V
JEDEC
JEITA
―
―
DC
Collector current
Pulse
I
2
−2
C
A
A
I
3
−3
CP
Continuous base current
Collector power dissipation
(1 device operation)
I
0.5
−0.5
B
TOSHIBA
2-25A1B
Weight: 2.1 g (typ.)
P
2.0
W
C
Collector power dissipation
(4 devices operation)
P
4.0
W
T
Junction temperature
T
150
°C
°C
j
Storage temperature range
T
−55 to 150
stg
Array Configuration
10
R1 R2
6
2
8
4
7
9
3
5
R1 ≈ 4 kΩ R2 ≈ 800 Ω
R1 R2
1
1
2002-11-20
MP4006
Thermal Characteristics
Characteristics
Symbol
Max
31.3
Unit
Thermal resistance of junction to
ambient
ΣR
°C/W
th (j-a)
(4 devices operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
T
260
°C
L
(3.2 mm from case for 10 s)
Electrical Characteristics (Ta = 25°C) (NPN transistor)
Characteristics
Symbol
Test Condition
= 80 V, I = 0 A
Min
Typ.
Max
Unit
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
I
V
V
V
―
―
―
―
10
10
4.0
―
µA
µA
mA
V
CBO
CEO
CB
CE
EB
E
= 80 V, I = 0 A
B
I
= 8 V, I = 0 A
0.8
80
―
EBO
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
V
V
I
I
= 1 mA, I = 0 A
―
(BR) CBO
(BR) CEO
C
C
E
= 10 mA, I = 0 A
80
―
―
V
B
h
FE
V
= 2 V, I = 1 A
2000
―
―
―
―
CE
C
Collector-emitter
Saturation voltage
V
I
I
= 1 A, I = 1 mA
―
1.5
2.0
―
CE (sat)
BE (sat)
C
C
B
V
Base-emitter
V
= 1 A, I = 1 mA
―
―
B
Transition frequency
f
V
V
= 2 V, I = 0.5 A
―
100
20
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= 10 V, I = 0 A, f = 1 MHz
―
―
ob
E
Turn-on time
t
―
―
―
0.4
4.0
0.6
―
―
―
Output
on
I
I
B1
B2
Input
20 µs
Switching time
µs
Storage time
Fall time
t
stg
V
= 30 V
CC
t
f
I
= −I = 1 mA, duty cycle ≤ 1%
B1
B2
2
2002-11-20
MP4006
Electrical Characteristics (Ta = 25°C) (PNP transistor)
Characteristics
Symbol
Test Condition
= −80 V, I = 0 A
Min
Typ.
Max
Unit
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
I
V
V
V
―
―
―
―
―
―
―
―
―
―
50
30
−10
−10
−4.0
―
µA
µA
mA
V
CBO
CEO
CB
CE
EB
E
= −80 V, I = 0 A
B
I
= −8 V, I = 0 A
−0.8
−80
−80
2000
―
EBO
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
V
V
I
I
= −1 mA, I = 0 A
E
(BR) CBO
(BR) CEO
C
C
= −10 mA, I = 0 A
―
V
B
h
FE
V
= −2 V, I = −1 A
―
―
CE
C
Collector-emitter
Saturation voltage
V
I
I
= −1 A, I = −1 mA
−1.5
−2.0
―
CE (sat)
BE (sat)
C
C
B
V
Base-emitter
V
= −1 A, I = −1 mA
―
B
Transition frequency
f
V
V
= −2 V, I = −0.5 A
―
MHz
pF
T
CE
CB
C
Collector output capacitance
C
= −10 V, I = 0 A, f = 1 MHz
―
―
ob
E
Turn-on time
t
―
―
―
0.4
2.0
0.4
―
―
―
on
Output
I
I
B2
B1
Input
20 µs
Switching time
µs
Storage time
Fall time
t
stg
V
= −30 V
CC
t
f
−I = I = 1 mA, duty cycle ≤ 1%
B1
B2
3
2002-11-20
MP4006
(NPN transistor)
I
– V
I
– V
BE
C
CE
C
3.2
3.2
2.4
1.6
0.8
0
2
0.5
Common emitter
Common emitter
Ta = 25°C
V
CE
= 2 V
0.3
2.4
1.6
0.8
0
0.23
0.21
0.2
I
= 0.19 mA
−55
B
25
Ta = 100°C
0.8
0
4
0
2
6
8
10
0
1.6
2.4
3.2
4.0
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
(V)
CE
BE
h
– I
V
– I
CE B
FE
C
10000
2.4
2.0
1.6
1.2
0.8
0.4
0
Common emitter
= 2 V
Common emitter
Ta = 25°C
5000
3000
V
CE
Ta = 100°C
2.5
25
−55
I
= 3 A
C
2.0
1000
1.5
1
500
300
0.5
0.1
100
0.03 0.05 0.1
0.3 0.5
Collector current
1
3
5
10
I
(A)
0.1
1
Base current
10
100
500
C
I
B
(mA)
V
– I
V
– I
BE (sat) C
CE (sat)
C
5
5
3
Common emitter
/I = 500
I
C B
3
Ta = −55°C
25
Ta = −55°C
100
1
1
25
100
0.5
0.3
0.5
0.3
Common emitter
/I = 500
I
C B
0.3
0.5
1
3
0.1
0.3
0.5
1
3
Collector current
I
C
(A)
Collector current
I
C
(A)
4
2002-11-20
MP4006
(PNP transistor)
I
– V
I
– V
BE
C
CE
C
−3.2
−3.2
−2.4
−1.6
−0.8
0
−1
−0.4
Common emitter
Common emitter
Ta = 25°C
V
CE
= −2 V
−2.4
−1.6
−0.8
0
−0.3
−0.25
−0.2
Ta = 100°C
25
−55
I
= −0.17 mA
B
0
0
−2
−4
−6
−8
−10
0
−0.8
−1.6
−2.4
−3.2
−4.0
Collector-emitter voltage
V
(V)
Base-emitter voltage
V
(V)
CE
BE
h
– I
V
– I
CE B
FE
C
10000
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0
Common emitter
Common emitter
Ta = 25°C
5000
3000
V
CE
= −2 V
Ta = 100°C
25
−2.0
I
= −3 A
−2.5
C
1000
−1.5
−55
−1.0
500
300
−0.1
−0.5
100
−0.03
−0.1
−0.3 −0.5
Collector current
−1
−3 −5
−10
I
C
(A)
−0.1
−1
−10
−100
−500
Base current
I
B
(mA)
V
– I
V
– I
BE (sat) C
CE (sat)
C
−5
−3
−5
−3
Common emitter
I
/I = 500
C B
Ta = −55°C
25
Ta = −55°C
−1
−1
100
25
100
−0.5
−0.5
−0.3
Common emitter
/I = 500
I
C B
−0.3
−0.1
−0.3
−0.5
−1
−3
−0.1
−0.3
−0.5
−1
−3
Collector current
I
C
(A)
Collector current
I
C
(A)
5
2002-11-20
MP4006
r
th
– t
w
Curves should be applied in thermal
limited area (single nonrepetitive pulse)
Below figure show thermal resistance per
1 unit versus pulse width.
(4)
100
(3)
(2)
(1)
30
10
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
3
NPN
PNP
(3) 3 devices operation
(4) 4 devices operation
1
Circuit board
100
0.5
1000
0.001
0.01
0.1
1 10
Pulse width
t
(s)
w
Safe Operating Area (NPN Tr)
P – Ta
T
5
3
8
6
4
2
0
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
I
max (pulsed)*
C
100 µs*
10 ms*
1 ms*
Attached on a circuit board
1
0.5
0.3
(4)
(3)
Circuit board
(2)
(1)
0.1
*: Single nonrepetitive pulse
Ta = 25°C
0.05
0.03
Curves must be derated linearly
with increase in temperature.
V
CEO
max
1
3
5
10
30 50
100
300
0
40
80
120
160
200
Collector-emitter voltage
V
(V)
Ambient temperature Ta (°C)
CE
Safe Operating Area (NPN Tr)
∆T – P
j T
−5
−3
160
120
80
I
max (pulsed)*
C
(1)
(2)
(3) (4)
100 µs*
10 ms*
1 ms*
−1
−0.5
−0.3
Circuit board
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
40
−0.1
*: Single nonrepetitive pulse
Ta = 25°C
−0.05
−0.03
Curves must be derated linearly
with increase in temperature.
V
max
CEO
0
−1
−3 −5
−10
−30 −50 −100
−300
0
1
2
3
4
5
Collector-emitter voltage
V
(V)
Total power dissipation
P
(W)
CE
T
6
2002-11-20
MP4006
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
7
2002-11-20
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