MT3S06S_07 [TOSHIBA]

VHF~UHF Band Low Noise Amplifier Applications; VHF 〜 UHF波段低噪声放大器的应用


型号：	MT3S06S_07
厂家：	TOSHIBA
描述：	VHF~UHF Band Low Noise Amplifier Applications VHF 〜 UHF波段低噪声放大器的应用放大器
文件：	总3页 (文件大小：109K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MT3S06S

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S06S

VHF~UHF Band Low Noise Amplifier Applications

Unit: mm

•

Low noise figure: NF = 1.6dB (V

= 3 V, I = 3 mA, f = 2 GHz)

CE C

High gain: |S |²= 9.5dB (V

= 3 V, I = 7 mA, f = 2 GHz)

21e

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Base current

1.5

°C

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

125

−55~125

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-2H1A

Weight: 0.0024 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Marking

Microwave Characteristics (Ta = 25°C)

Characteristics

Transition frequency

Symbol

Test Condition

Min

Typ.

Max

Unit

= 3 V, I = 5 mA

8.5

9.5

1.7

1.6

⎯

GHz

⎪S ⎪²(1)

= 1 V, I = 5 mA, f = 2 GHz

⎯

6.5

⎯

21e

Insertion gain

Noise figure

⎪S ⎪²(2)

= 3 V, I = 7 mA, f = 2 GHz

21e

NF (1)

NF (2)

= 1 V, I = 3 mA, f = 2 GHz

= 3 V, I = 3 mA, f = 2 GHz

2007-11-01

MT3S06S

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 5 V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

DC current gain

⎯

0.1

μA

CBO

= 1 V, I = 0

EBO

= 1 V, I = 5 mA

⎯

140

0.7

Reverse transfer capacitance

= 1 V, I = 0, f = 1 MHz

(Note)

0.25

Note: C is measured by 3 terminal method with capacitance bridge.

Caution

This device is sensitive to electrostatic discharge. Please handle with caution.

2007-11-01

MT3S06S

RESTRICTIONS ON PRODUCT USE

20070701-EN GENERAL

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his

document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which

manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patents or other rights of

TOSHIBA or the third parties.

• Please contact your sales representative for product-by-product details in this document regarding RoHS

compatibility. Please use these products in this document in compliance with all applicable laws and regulations

that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

occurring as a result of noncompliance with applicable laws and regulations.

2007-11-01

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