MT3S07FS [TOSHIBA]

VHF~UHF Band Low-Noise Amplifier Applications; VHF 〜 UHF波段低噪声放大器的应用
MT3S07FS
型号: MT3S07FS
厂家: TOSHIBA    TOSHIBA
描述:

VHF~UHF Band Low-Noise Amplifier Applications
VHF 〜 UHF波段低噪声放大器的应用

晶体 放大器 小信号双极晶体管 射频小信号双极晶体管 光电二极管
文件: 总3页 (文件大小:148K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MT3S07FS  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
MT3S07FS  
Unit: mm  
VHF~UHF Band Low-Noise Amplifier Applications  
VHF~UHF Band Buffer Applications  
Superior performance in buffer applications  
Superior noise characteristics  
1
3
: NF = 1.6 dB, |S |2 = 8 dB (f = 2 GHz)  
21e  
2
0.8±0.05  
1.0±0.05  
0.1±0.05  
0.1±0.05  
Absolute Maximum Ratings (Ta = 25°C)  
1.BASE  
2.EMITTER  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
fSM  
3.COLLECOTR  
V
CBO  
V
CEO  
V
EBO  
10  
5
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
JEDEC  
1.5  
V
JEITA  
I
25  
mA  
mW  
mW  
°C  
°C  
C
Toshiba  
2-1E1A  
Base current  
I
10  
B
Weight: 0.0006 g (typ.)  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note)  
C
85  
T
j
125  
55~125  
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note: 10 mm2 × 1.0 mm(t), mounted on a glass-epoxy printed circuit board.  
Marking  
2
1
3
0 4  
1
2007-11-01  
MT3S07FS  
Microwave Characteristics (Ta = 25°C)  
Characteristic  
Transition frequency  
Symbol  
Condition  
Min  
Typ.  
Max  
Unit  
f
V
V
V
V
= 3 V, I = 10 mA  
10  
12  
8
3
GHz  
T
CE  
CE  
CE  
CE  
C
S 2 (1)  
= 1 V, I = 5 mA, f = 2 GHz  
21e  
C
Insertion gain  
Noise figure  
dB  
dB  
S 2 (2)  
= 3 V, I = 15 mA, f = 2 GHz  
7.5  
10  
1.6  
21e  
C
NF (1)  
= 1 V, I = 5 mA, f = 2 GHz  
C
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Condition  
Min  
Typ.  
Max  
Unit  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
I
V
V
V
V
= 5 V, I = 0  
70  
0.1  
1
μA  
μA  
CBO  
CB  
EB  
CE  
CB  
E
I
= 1 V, I = 0  
C
EBO  
h
= 1 V, I = 5 mA  
140  
0.65  
FE  
C
Reverse transfer capacitance  
C
= 1 V, I = 0, f = 1 MHz(Note)  
0.4  
pF  
re  
E
Note: C is measured with a three-terminal method using a capacitance bridge.  
re  
Caution  
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before  
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the  
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers  
and other objects that come into direct contact with devices should be made of antistatic materials.  
2
2007-11-01  
MT3S07FS  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
3
2007-11-01  

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