MT6L56S [TOSHIBA]

TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2Q1A, 6 PIN, BIP RF Small Signal;
MT6L56S
型号: MT6L56S
厂家: TOSHIBA    TOSHIBA
描述:

TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2Q1A, 6 PIN, BIP RF Small Signal

放大器 光电二极管 晶体管
文件: 总3页 (文件大小:75K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
                                                        
                                                        
MT6L56S  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
Preliminary  
MT6L56S  
VHF-UHF Band Low Noise Amplifier Application  
VHF-UHF Band Oscillator Application  
Unit: mm  
·
Two devices are built into the sES6 package, which is smaller and  
thinner than the super-thin and ultra-super-mini (6-pin) ES6  
package.  
Mounted Devices  
Q1: SSM (TESM)  
Q2: TESM  
MT3S08T  
MT3S07S  
Three-pin (SSM/TESM) product No.  
(MT3S07T)  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Q1  
Q2  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
10  
5
20  
8
V
V
CBO  
CEO  
EBO  
JEDEC  
JEITA  
1.5  
25  
7
1.5  
40  
10  
V
TOSHIBA  
2-2Q1A  
I
mA  
mA  
mW  
°C  
°C  
C
Weight: 2.1 mg (typ.)  
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
150  
125  
C
T
j
T
-55~125  
stg  
Note 1: Total power dissipation of Q1 and Q2 mounted on the circuit board  
Marking  
Pin Connections  
6
1
5
2
4
3
B1  
E2  
B2  
A
S
Q1  
Q2  
C1  
E1  
C2  
1
2002-01-18  
                                                                                    
                                                                                    
                                                                                     
                                                                                     
MT6L56S  
Electrical Characteristics Q1-Side (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 5 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
I
V
V
V
V
V
V
V
V
V
¾
¾
70  
10  
¾
4
¾
¾
0.1  
1
mA  
mA  
CBO  
CB  
EB  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
E
I
= 1 V, I = 0  
C
EBO  
h
FE  
= 1 V, I = 5 mA  
¾
140  
¾
¾
C
Transition frequency  
f
= 3 V, I = 10 mA  
12  
GHz  
T
C
ïS ï2 (1)  
= 1 V, I = 5 mA, f = 2 GHz  
6.5  
7
¾
21e  
C
Insertion gain  
dB  
ïS ï2 (2)  
= 3 V, I = 15 mA, f = 2 GHz  
¾
21e  
C
NF (1)  
NF (2)  
= 1 V, I = 5 mA, f = 2 GHz  
¾
¾
¾
1.6  
1.5  
0.45  
3
C
Noise figure  
dB  
pF  
= 3 V, I = 5 mA, f = 2 GHz  
3
C
Reverse transfer capacitance  
C
re  
= 1 V, I = 0, f = 1 MHz  
(Note 2)  
0.85  
E
Electrical Characteristics Q2-Side (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 10 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
I
V
V
V
V
V
V
V
V
¾
¾
80  
2
¾
¾
0.1  
1
mA  
mA  
CBO  
CB  
EB  
CE  
CE  
CE  
CE  
CE  
CB  
E
I
= 1 V, I = 0  
C
EBO  
h
FE  
= 1 V, I = 5 mA  
¾
140  
¾
¾
C
Transition frequency  
f
= 1 V, I = 5 mA  
4.5  
9.5  
12.5  
1.4  
0.55  
GHz  
T
C
ïS ï2 (1)  
= 1 V, I = 5 mA, f = 1 GHz  
¾
9.5  
¾
¾
¾
21e  
C
Insertion gain  
dB  
ïS ï2 (2)  
= 3 V, I = 20 mA, f = 1 GHz  
¾
21e  
C
Noise figure  
NF  
= 1 V, I = 5 mA, f = 1 GHz  
2.5  
0.95  
dB  
pF  
C
Reverse transfer capacitance  
C
re  
= 1 V, I = 0, f = 1 MHz  
(Note 2)  
E
Note 2: C is measured by 3 terminal method with capacitance bridge.  
re  
Handling Precaution  
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
2
2002-01-18  
MT6L56S  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
3
2002-01-18  

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