MT6L57AS [TOSHIBA]
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPERMINI, 2-2Q1A, ES6, 6 PIN, BIP RF Small Signal;
| 型号： | MT6L57AS |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPERMINI, 2-2Q1A, ES6, 6 PIN, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT6L57AS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
Preliminary
M T 6 L 5 7 A S
VHF-UHF Band Low Noise Amplifier Application
VHF-UHF Band Oscillator Application
Mounted Devices
Q1: SSM (TESM) Q2: SSM (TESM)
MT3S06S
(MT3S06T)
MT3S04AS
(MT3S04AT)
Three pin (SSM/TESM) type part No.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1
Q2
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
10
5
10
5
V
V
CBO
CEO
EBO
1.5
15
7
2
V
I
40
10
mA
mA
mW
°C
°C
C
Base current
I
B
Collector power dissipation
Junction temperature
Storage temperature range
P
(Note 1)
100
125
C
T
j
T
−55~125
stg
Note 1: Total power dissipation of Q1 and Q2
Marking
Pin Assignment
6
1
5
AW
2
4
3
Type name
B1
E2
B2
Q1
Q2
C1
E1
C2
000707EAA1
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
2001-02-20 1/2
MT6L57AS
Electrical Characteristics Q1-Side (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 5 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
DC current gain
I
V
V
V
V
V
V
V
V
V
70
7
0.1
1
µA
µA
CBO
CB
EB
CE
CE
CE
CE
CE
CE
CB
E
I
= 1 V, I = 0
C
EBO
h
FE
= 1 V, I = 5 mA
140
C
Transition frequency
f
= 3 V, I = 5 mA
10
GHz
T
C
S 2 (1)
= 1 V, I = 5 mA, f = 2 GHz
4.5
7.5
8
21e
C
Insertion gain
dB
S 2 (2)
= 3 V, I = 7 mA, f = 2 GHz
21e
C
NF (1)
NF (2)
= 1 V, I = 3 mA, f = 2 GHz
1.7
1.6
0.35
3
C
Noise figure
dB
pF
= 3 V, I = 3 mA, f = 2 GHz
3
C
Reverse transfer capacitance
C
re
= 1 V, I = 0, f = 1 MHz
(Note 2)
0.75
E
Electrical Characteristics Q2-Side (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 5 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
DC current gain
I
V
V
V
V
V
V
V
V
V
V
80
2
0.1
1
µA
µA
CBO
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
E
I
= 1 V, I = 0
C
EBO
h
FE
= 1 V, I = 5 mA
160
C
f
f
(1)
= 1 V, I = 5 mA
4.5
7
T
T
C
Transition frequency
Insertion gain
GHz
dB
(2)
= 3 V, I = 7 mA
5
C
S 2 (1)
= 1 V, I = 5 mA, f = 1 GHz
7.5
8.5
11
1.3
1.2
0.9
21e
C
S 2 (2)
= 3 V, I = 20 mA, f = 1 GHz
21e
C
NF (1)
NF (2)
= 1 V, I = 5 mA, f = 1 GHz
2.2
2
C
Noise figure
dB
pF
= 3 V, I = 7 mA, f = 1 GHz
C
Reverse transfer capacitance
C
re
= 1 V, I = 0, f = 1 MHz
(Note 2)
1.25
E
Note 2: C is measured by 3 terminal method with capacitance bridge.
re
Caution
This device electrostatic sensitivity. Please handle with caution.
2001-02-20 2/2
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