RN1106MFV [TOSHIBA]

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; 开关,逆变电路,接口电路及驱动电路的应用
RN1106MFV
型号: RN1106MFV
厂家: TOSHIBA    TOSHIBA
描述:

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
开关,逆变电路,接口电路及驱动电路的应用

开关 驱动
文件: 总8页 (文件大小:205K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RN1101MFVRN1106MFV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1101MFV,RN1102MFV,RN1103MFV  
RN1104MFV,RN1105MFV,RN1106MFV  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
Ultra-small package, suited to very high density mounting  
1.2 ± 0.05  
Incorporating a bias resistor into the transistor reduces the number of parts,  
so enabling the manufacture of ever more compact equipment and  
lowering assembly cost.  
0.80 ± 0.05  
1
A wide range of resistor values is available for use in various circuits.  
Complementary to the RN2101MFV~RN2106MFV  
Lead (Pb) - free  
3
2
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1101MFV  
RN1102MFV  
RN1103MFV  
RN1104MFV  
RN1105MFV  
RN1106MFV  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
1. BASE  
47  
2. EMITTER  
VESM  
3. COLLECTOR  
2.2  
4.7  
JEDEC  
JEITA  
2-1L1A  
TOSHIBA  
Weight: 0.0015 g (typ.)  
Maximum Ratings  
(Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN1101MFV~1106MFV  
RN1101MFV~1104MFV  
RN1105MFV, 1106MFV  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
150  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note)  
C
RN1101MFV~1106MFV  
T
j
T
stg  
°C  
Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
0.5  
0.45  
1.15  
0.4  
0.45  
0.4  
0.4  
2005-03-30  
1
RN1101MFVRN1106MFV  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
I
V
V
= 50 V, I = 0  
100  
500  
1.52  
0.71  
0.33  
0.15  
0.145  
0.138  
CBO  
CB  
E
RN1101MFV~  
1106MFV  
Collector cutoff current  
Emitter cutoff current  
nA  
= 50 V, I = 0  
CEO  
CE  
B
RN1101MFV  
RN1102MFV  
RN1103MFV  
RN1104MFV  
RN1105MFV  
RN1106MFV  
RN1101MFV  
RN1102MFV  
RN1103MFV  
RN1104MFV  
RN1105MFV  
RN1106MFV  
0.82  
0.38  
0.17  
0.082  
0.078  
0.074  
30  
V
= 10 V, I = 0  
C
EB  
EB  
I
mA  
EBO  
V
= 5 V, I = 0  
C
50  
70  
DC current gain  
h
V
= 5 V, I = 10 mA  
FE  
CE C  
80  
80  
80  
Collector-emitter  
saturation voltage  
RN1101MFV~  
1106MFV  
I
= 5 mA, I = 0.25  
C B  
V
0.1  
0.3  
V
V
CE (sat)  
mA  
1.1  
1.2  
1.3  
1.5  
0.6  
0.7  
2.0  
2.4  
3.0  
5.0  
1.1  
1.3  
RN1101MFV  
RN1102MFV  
RN1103MFV  
RN1104MFV  
RN1105MFV  
RN1106MFV  
V
= 0.2 V, I = 5  
C
CE  
Input voltage (ON)  
V
I (ON)  
mA  
RN1101MFV~  
1104MFV  
1.0  
1.5  
V
= 5 V, I = 0.1  
C
CE  
Input voltage (OFF)  
V
V
I (OFF)  
mA  
RN1105MFV,  
1106MFV  
0.5  
0.8  
Collector output  
capacitance  
RN1101MFV~  
1106MFV  
V
= 10 V, I = 0,  
CB E  
C
ob  
0.7  
pF  
f = 1 MH  
z
3.29  
7
4.7  
10  
6.11  
13  
RN1101MFV  
RN1102MFV  
RN1103MFV  
RN1104MFV  
RN1105MFV  
RN1106MFV  
15.4  
32.9  
1.54  
3.29  
22  
28.6  
61.1  
2.86  
6.11  
Input resistor  
R1  
k  
47  
2.2  
4.7  
RN1101MFV~  
1104MFV  
0.8  
1.0  
1.2  
Resistor ratio  
R1/R2  
RN1105MFV  
RN1106MFV  
0.0376 0.0468 0.0562  
0.08 0.1 0.12  
2005-03-30  
2
RN1101MFVRN1106MFV  
IC - VI (ON)  
IC - VI (ON)  
RN1102MFV  
RN1101MFV  
100  
10  
1
100  
10  
1
Ta = 100°C  
Ta = 100°C  
25  
25  
-25  
-25  
COMMON EMITTER  
COMMON EMITTER  
VCE = 0.2 V  
VCE = 0.2 V  
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
100  
100  
INPUT VOLTAGE VI (ON) (V)  
INPUT VOLTAGE VI (ON) (V)  
IC - VI (ON)  
IC - VI (ON)  
RN1104MFV  
RN1103MFV  
100  
10  
1
100  
10  
1
Ta = 100°C  
Ta = 100°C  
25  
25  
-25  
-25  
COMMON EMITTER  
VCE = 0.2 V  
COMMON EMITTER  
VCE = 0.2 V  
0.1  
0.1  
0.1  
1
10  
0.1  
1
10  
100  
INPUT VOLTAGE VI (ON) (V)  
INPUT VOLTAGE VI (ON) (V)  
RN1105MFV  
IC - VI (ON)  
IC - VI (ON)  
RN1106MFV  
100  
10  
1
100  
10  
1
Ta = 100°C  
Ta = 100°C  
25  
25  
-25  
-25  
COMMON EMITTER  
VCE = 0.2 V  
COMMON EMITTER  
VCE = 0.2 V  
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
INPUT VOLTAGE VI(ON) (V)  
INPUT VOLTAGE VI (ON) (V)  
2005-03-30  
3
RN1101MFVRN1106MFV  
RN1102MFV  
RN1101MFV  
IC - VI(OFF)  
IC - VI (OFF)  
10000  
1000  
100  
10000  
1000  
100  
COMMON EMITTER  
VCE = 5 V  
COMMON EMITTER  
VCE = 5 V  
Ta = 100°C  
Ta = 100°C  
25  
-25  
25  
-25  
10  
10  
0.4 0.6 0.8  
RN1103MFV  
1
1.2 1.4 1.6 1.8  
2
0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
INPUT VOLTAGE VI(OFF) (V)  
INPUT VOLTAGE VI (OFF) (V)  
RN1104MFV  
IC - VI (OFF)  
IC - VI( OFF)  
10000  
1000  
100  
10000  
1000  
100  
COMMON EMITTER  
VCE = 5 V  
COMMON EMITTER  
VCE = 5 V  
Ta = 100°C  
Ta = 100°C  
25  
-25  
25  
-25  
10  
10  
0.4 0.6 0.8  
RN1105MFV  
1
1.2 1.4 1.6 1.8  
2
0.4 0.6 0.8  
RN1106MFV  
1
1.2 1.4 1.6 1.8  
2
INPUT VOLTAGE VI (OFF) (V)  
INPUT VOLTAGE VI (OFF) (V)  
IC - VI(OFF)  
IC - VI(OFF)  
10000  
1000  
100  
10000  
1000  
100  
COMMON EMITTER  
VCE = 5 V  
COMMON EMITTER  
VCE = 5 V  
Ta = 100°C  
25  
-25  
Ta = 100°C  
25  
-25  
10  
10  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
INPUT VOLTAGE VI (OFF) (V)  
INPUT VOLTAGE VI (OFF) (V)  
2005-03-30  
4
RN1101MFVRN1106MFV  
hFE - IC  
RN1102MFV  
RN1101MFV  
hFE - IC  
1000  
1000  
100  
10  
Ta = 100°C  
Ta = 100°C  
25  
25  
100  
-25  
-25  
COMMON EMITTER  
VCE = 5 V  
COMMON EMITTER  
VCE = 5 V  
10  
1
1
10  
100  
100  
100  
1
10  
100  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
RN1103MFV  
RN1104MFV  
hFE - IC  
hFE - IC  
1000  
1000  
Ta = 100°C  
Ta = 100°C  
25  
25  
-25  
100  
100  
-25  
COMMON EMITTER  
VCE = 5 V  
COMMON EMITTER  
VCE = 5 V  
10  
10  
1
10  
100  
1
10  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
RN1105MFV  
RN1106MFV  
hFE - IC  
hFE - IC  
1000  
1000  
Ta = 100°C  
Ta = 100°C  
25  
25  
-25  
-25  
100  
100  
COMMON EMITTER  
VCE = 5 V  
COMMON EMITTER  
VCE = 5 V  
10  
10  
1
10  
COLLECTOR CURRENT IC (mA)  
100  
1
10  
COLLECTOR CURRENT IC (mA)  
2005-03-30  
5
RN1101MFVRN1106MFV  
VCE (sat) - IC  
VCE (sat) - IC  
RN1101MFV  
RN1102MFV  
1
COMMON EMITTER  
IC / IB = 10  
COMMON EMITTER  
IC / IB = 10  
Ta = 100°C  
-25  
Ta = 100°C  
-25  
0.1  
25  
25  
0.01  
1
1
1
10  
100  
100  
100  
1
1
1
10  
100  
100  
100  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
VCE (sat) - IC  
VCE (sat) - IC  
RN1103MFV  
RN1104MFV  
1
COMMON EMITTER  
IC / IB = 10  
COMMON EMITTER  
IC / IB = 10  
Ta = 100°C  
Ta = 100°C  
-25  
0.1  
25  
25  
-25  
0.01  
10  
10  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
VCE (sat) - IC  
VCE (sat) - IC  
RN1105MFV  
RN1106MFV  
1
COMMON EMITTER  
IC / IB = 10  
COMMON EMITTER  
IC / IB = 10  
0.1  
Ta = 100°C  
-25  
Ta = 100°C  
-25  
25  
25  
0.01  
10  
COLLECTOR CURRENT IC (mA)  
10  
COLLECTOR CURRENT IC (mA)  
2005-03-30  
6
RN1101MFVRN1106MFV  
Type Name  
Marking  
RN1101MFV  
XA  
RN1102MFV  
RN1103MFV  
RN1104MFV  
RN1105MFV  
RN1106MFV  
XB  
XC  
XD  
XE  
XF  
2005-03-30  
7
RN1101MFVRN1106MFV  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
2005-03-30  
8

相关型号:

RN1106MFV(TL3MAA)

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
TOSHIBA

RN1106MFV(TL3PAV)

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
TOSHIBA

RN1106MFV(TPL3)

Digital Transistors 100mA 50volts 3Pin 4.7K x 47Kohms
TOSHIBA

RN1107

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA

RN1107(T5L,F,T)

Small Signal Bipolar Transistor
TOSHIBA

RN1107(TE85R)

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SSM, 2-2H1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA

RN1107ACT

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
TOSHIBA

RN1107CT

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
TOSHIBA

RN1107F

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
ETC

RN1107FS

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
TOSHIBA

RN1107FV

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP General Purpose Small Signal
TOSHIBA

RN1107MFV

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal
TOSHIBA