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RN1114FV [TOSHIBA]

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal;
RN1114FV
型号： RN1114FV
厂家： TOSHIBA    TOSHIBA
描述：

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1L1A, VESM, 3 PIN, BIP General Purpose Small Signal

开关 光电二极管 晶体管
文件： 总8页 (文件大小：547K)
中文：  中文翻译
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RN1114FV∼RN1118FV  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1114FV, RN1115FV, RN1116FV, RN1117FV, RN1118FV  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
ꢀ
ꢀ
ꢀ
ꢀ
Built-in bias resistors  
Unit in mm  
Simplified circuit design  
1.2 ± 0.05  
Reduced quantity of parts and manufacturing process  
Complementary to RN2114FV~RN2118FV  
0.80 ± 0.05  
1
3
2
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1114FV  
RN1115FV  
RN1116FV  
RN1117FV  
RN1118FV  
1
10  
10  
10  
4.7  
10  
1.BASE  
2.2  
4.7  
10  
47  
2.EMITTER  
VESM  
3.COLLECTOR  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-1L1A  
Weight: 0.0015 g (typ.)  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
0.5mm  
Collector-base voltage  
V
V
50  
50  
V
V
CBO  
CEO  
0.45mm  
0.45mm  
RN1114FV~1118FV  
Collector-emitter voltage  
Emitter-base voltage  
RN1114FV  
RN1115FV  
RN1116FV  
RN1117FV  
RN1118FV  
5
0.4mm  
6
V
V
7
EBO  
15  
25  
Collector current  
I
100  
150  
150  
−55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note)  
C
RN1114FV~1118FV  
T
j
T
stg  
°C  
Note: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)  
2004-06-28  
1
RN1114FV∼RN1118FV  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 50V, I = 0  
Min  
Typ.  
Max  
Unit  
nA  
I
I
V
CB  
V
CE  
V
EB  
V
EB  
V
EB  
V
EB  
V
EB  
―
―
―
―
―
―
―
―
100  
500  
CBO  
E
Collector cut-off  
current  
RN1114FV~1118FV  
―
= 50V, I = 0  
―
CEO  
B
RN1114FV  
RN1115FV  
RN1116FV  
RN1117FV  
RN1118FV  
= 5V, I = 0  
0.35  
0.37  
0.36  
0.78  
0.33  
0.65  
0.71  
0.68  
1.46  
0.63  
C
= 6V, I = 0  
C
Emitter cut-off current  
I
―
mA  
= 7V, I = 0  
C
EBO  
= 15V, I = 0  
C
= 25V, I = 0  
C
RN1114FV~16FV,  
18FV  
50  
―
―
DC current gain  
h
―
―
V
= 5V, I = 10mA  
―
FE  
CE  
C
RN1117FV  
30  
―
―
Collector-emitter  
saturation voltage  
RN1114FV~1118FV  
V
I
= 5mA, I = 0.25mA  
B
―
0.1  
0.3  
V
CE (sat)  
C
0.6  
0.7  
0.8  
1.5  
2.5  
0.3  
0.3  
0.3  
0.3  
0.5  
―
―
―
―
―
―
―
―
―
―
―
250  
2.0  
2.5  
2.5  
4.0  
10  
RN1114FV  
RN1115FV  
RN1116FV  
RN1117FV  
RN1118FV  
RN1114FV  
RN1115FV  
RN1116FV  
RN1117FV  
Input voltage (ON)  
V
―
V
= 0.2V, I = 5mA  
V
I (ON)  
CE  
C
0.9  
1.0  
1.1  
2.3  
5.7  
―
Input voltage (OFF)  
Transition frequency  
V
―
V
= 5V, I = 0.1mA  
C
V
I (OFF)  
CE  
RN1118FV  
RN1114FV~1118FV  
f
―
―
V
V
= 10V, I = 5mA  
C
MH  
T
CE  
z
Collector Output  
capacitance  
= 10V, I = 0,  
E
CB  
RN1114FV~1118FV  
C
ob  
―
3
―
pF  
f = 1MH  
z
0.7  
1.54  
3.29  
7
1.0  
2.2  
4.7  
10  
1.3  
2.86  
6.11  
13  
RN1114FV  
RN1115FV  
RN1116FV  
RN1117FV  
RN1118FV  
RN1114FV  
RN1115FV  
RN1116FV  
RN1117FV  
RN1118FV  
Input resistor  
R1  
―
―
kΩ  
32.9  
―
47  
61.1  
―
0.1  
0.22  
0.47  
2.13  
4.7  
―
―
Resistor ratio  
R1/R2  
―
―
―
―
―
―
―
―
2004-06-28  
2
RN1114FV∼RN1118FV  
RN1115FV  
RN1114FV  
COMMON  
EMITTER  
VCE=0.2V  
COMMON  
EMITTER  
VCE=0.2V  
IINPUT VOLTAGE VI(ON) (V)  
IINPUT VOLTAGE VI(ON) (V)  
RN1117FV  
RN1116FV  
COMMON  
EMITTER  
VCE=0.2V  
COMMON  
EMITTER  
VCE=0.2V  
IINPUT VOLTAGE VI(ON) (V)  
IINPUT VOLTAGE VI(ON) (V)  
RN1118FV  
COMMON  
EMITTER  
VCE=0.2V  
IINPUT VOLTAGE VI(ON) (V)  
2004-06-28  
3
RN1114FV∼RN1118FV  
RN1114FV  
RN1115FV  
COMMON  
EMITTER  
VCE=5V  
COMMON  
EMITTER  
VCE=5V  
IINPUT VOLTAGE VI(OFF) (V)  
IINPUT VOLTAGE VI(OFF) (V)  
RN1117FV  
RN1116FV  
COMMON  
EMITTER  
VCE=5V  
COMMON  
EMITTER  
VCE=5V  
IINPUT VOLTAGE VI(OFF) (V)  
IINPUT VOLTAGE VI(OFF) (V)  
RN1118FV  
COMMON  
EMITTER  
VCE=5V  
IINPUT VOLTAGE VI(OFF) (V)  
2004-06-28  
4
RN1114FV∼RN1118FV  
RN1115FV  
RN1114FV  
COMMON  
EMITTER  
VCE=5V  
COMMON  
EMITTER  
VCE=5V  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
RN1116FV  
RN1117FV  
COMMON  
EMITTER  
VCE=5V  
COMMON EMITTER  
VCE=5V  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
RN1118FV  
COMMON  
EMITTER  
VCE=5V  
COLLECTOR CURRENT IC (mA)  
2004-06-28  
5
RN1114FV∼RN1118FV  
RN1114FV  
RN1115FV  
COMMON EMITTER  
IC / IB=20  
COMMON EMITTER  
IC / IB=20  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
RN1116FV  
RN1117FV  
COMMON EMITTER  
IC / IB=20  
COMMON EMITTER  
IC / IB=20  
COLLECTOR CURRENT IC (mA)  
COLLECTOR CURRENT IC (mA)  
RN1118FV  
COMMON EMITTER  
IC / IB=20  
COLLECTOR CURRENT IC (mA)  
2004-06-28  
6
RN1114FV∼RN1118FV  
Type Name  
RN1114FV  
Marking  
XQ  
RN1115FV  
RN1116FV  
RN1117FV  
RN1118FV  
XS  
XT  
XU  
XW  
2004-06-28  
7
RN1114FV∼RN1118FV  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
• The information contained herein is subject to change without notice.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
2004-06-28  
8

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