RN1132FT [TOSHIBA]
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP General Purpose Small Signal;
| 型号： | RN1132FT |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RN1131FT,RN1132FT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1131FT,RN1132FT
Unit: mm
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
ꢀ
ꢀ
Extra small package(TESM) is applicable for extra high density fabrication.
Since bias resistance is built in the transistor,the miniaturization of the
apparatus by curtailment of the number of parts and laborsaving of an
assembly are possible.
ꢀ
Complementary to RN2131FT, RN2132FT
Equivalent Circuit
JEDEC
JEITA
―
―
TOSHIBA
2-1B1A
Maximum Ratings
(Ta = 25°C)
Weight:0.0022g(typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
50
50
V
V
CBO
CEO
EBO
5
V
I
100
mA
mW
°C
°C
C
Collector power dissipation
Junction temperature
P
100
C
T
j
150
Storage temperature range
T
−55~150
stg
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
V
V
V
= 50V, I = 0
E
―
―
―
―
100
100
700
0.3
―
nA
nA
―
CBO
CB
EB
CE
I
= 5V, I = 0
C
EBO
DC current gain
h
= 5V, I = 1mA
C
120
―
―
FE
Collector-emitter saturation voltage
Translation frequency
V
I
= 5mA, I = 0.25mA
C B
0.1
250
3
V
CE (sat)
f
V
V
= 10V, I = 5mA
―
MHz
pF
T
CE
C
―
Collector output capacitance
C
= 10V, I = 0, f = 1MHz
CB E
―
ob
RN1131FT
Input resistor
70
140
100
200
130
260
―
kΩ
R1
RN1132FT
1
2004-05-06
RN1131FT,RN1132FT
IC - VI(OFF)
IC - VI(ON)
RN1131FT
RN1131FT
100
10
1
10000
1000
100
Ta=100°C
Ta=100°C
25
25
-25
-25
COMMON EMITTER
VCE=5V
COMMON EMITTER
VCE=0.2V
0.1
10
0.1
1
10
100
0
1
2
3
4
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
IC - VI(ON)
IC - VI(OFF)
RN1132FT
RN1132FT
Ta=100°C
100
10
1
10000
1000
100
COMMON EMITTER
VCE=0.2V
25
-25
Ta=100°C
-25
25
COMMON EMITTER
VCE=5V
0.1
10
0.1
1
10
100
0
1
2
3
4
5
6
INPUT VOLTAGE V (ON) ( V)
I
INPUT VOLTAGE V (OFF) ( V)
I
2
2004-05-06
RN1131FT,RN1132FT
VCE(sat) - IC
hFE - IC
RN1131FT
RN1131FT
1
1000
100
10
COMMON EMITTER
IC / IB=20
COMMON EMITTER
VCE=5V
Ta=100°C
25
Ta=100°C
0.1
-25
-25
25
0.01
1
10
100
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
VCE(sat) - IC
hFE - IC
RN1132FT
RN1132FT
1000
100
10
1
COMMON EMITTER
IC / IB=20
Ta=100°C
0.1
-25
Ta=100°C
-25
25
25
COMMON EMITTER
VCE=5V
0.01
1
10
COLLECTOR CURRENT IC (mA)
100
0.1
1
10
100
COLLECTOR CURRENT IC(mA)
3
2004-05-06
RN1131FT,RN1132FT
Type Name
RN1131FT
Marking
X 3
RN1132FT
X 4
4
2004-05-06
RN1131FT,RN1132FT
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-05-06
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