RN1132MFV(TL3,T) [TOSHIBA]

Small Signal Bipolar Transistor;


型号：	RN1132MFV(TL3,T)
厂家：	TOSHIBA
描述：	Small Signal Bipolar Transistor
文件：	总6页 (文件大小：172K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RN1131MFV, RN1132MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1131MFV, RN1132MFV

Unit: mm

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

 Ultra-small package, suited to very high density mounting

 Incorporating a bias resistor into the transistor reduces the number of parts, so

enabling the manufacture of ever more compact equipment and lowering assembly

cost.

 A wide range of resistor values is available for use in various circuits.

 Complementary to the RN2131MFV, RN2132MFV

Equivalent Circuit

1.BASE

2.EMITTER

VESM

3.COLLECTOR

JEDEC

JEITA

―

TOSHIBA

1-1Q1S

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Land Pattern Dimensions

(for reference only)

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

Unit: mm

0.5

CBO

CEO

EBO

0.45

Collector-emitter voltage

Emitter-base voltage

1.15

Collector current

100

°C

0.4

Collector power dissipation

Junction temperature

Storage temperature range

(Note1)

150

0.45

150

0.4

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note1 : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Start of commercial production

2005-04

Toshiba Electronic Devices & Storage Corporation

2019-01-07

RN1131MFV, RN1132MFV

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Collector cut-off current

Symbol

Test Condition

= 50 V, I = 0 A

Min

Typ.

Max

Unit

―

100

700

0.3

―

CBO

Emitter cut-off current

= 5 V, I = 0 A

EBO

DC current gain

= 5 V, I = 1 mA

120

―

CE (sat)

Collector-emitter saturation voltage

Collector output capacitance

= 5 mA, I = 0.5 mA

0.1

0.7

100

200

= 10 V, I = 0 A, f = 1 MHz

CB E

―

RN1131MFV

Input resistor

130

260

―

kΩ

RN1132MFV

140

Toshiba Electronic Devices & Storage Corporation

2019-01-07

RN1131MFV, RN1132MFV

IC - VI(OFF)

RN1131MFV

IC - VI(ON)

RN1131MFV

100

10000

1000

100

COMMON EMITTER

VCE = 0.2V

-25

Ta = 100°C

-25

Ta = 100°C

COMMON EMITTER

VCE = 5V

0.1

100

INPUT VOLTAGEꢀVI(ON) ( V)

INPUT VOLTAGE ꢀVI(OFF) ( V)

IC - VI(ON)

IC - VI(OFF)

RN1132MFV

100

10000

1000

100

COMMON EMITTER

VCE = 0.2V

-25

Ta = 100°C

COMMON EMITTER

VCE = 5V

0.1

100

INPUT VOLTAGE ꢀVI(ON) ( V)

INPUT VOLTAGEꢀVI(OFF) ( V)

Toshiba Electronic Devices & Storage Corporation

2019-01-07

RN1131MFV, RN1132MFV

hFE - IC

VCE(sat) - IC

RN1131MFV

1000

COMMON EMITTER

IC/IB = 10

Ta = 100°C

100

0.1

-25

Ta = 100°C

-25

COMMON EMITTER

VCE = 5V

0.01

0.1

100

0.1

100

COLLECTOR CURRENTꢀIC (mA)

VCE(sat) - IC

hFE - IC

RN1132MFV

1000

COMMON EMITTER

IC/IB = 10

Ta = 100°C

100

0.1

Ta = 100°C

-25

COMMON EMITTER

VCE = 5V

0.01

0.1

100

0.1

COLLECTOR CURRENTꢀIC (mA)

Toshiba Electronic Devices & Storage Corporation

2019-01-07

RN1131MFV, RN1132MFV

Marking

Type Name

Marking

RN1131MFV

RN1132MFV

Toshiba Electronic Devices & Storage Corporation

2019-01-07

RN1131MFV, RN1132MFV

RESTRICTIONS ON PRODUCT USE

Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.

Hardware, software and systems described in this document are collectively referred to as “Product”.

• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's

written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for

complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which

minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to

property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the

Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information,

including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and

conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product

will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited

to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the

applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any

other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO

LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.

•

PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY

CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT

("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation,

equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment,

equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or

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website.

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applicable laws or regulations.

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•

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PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,

INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING

WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2)

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ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

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the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass

destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations

including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export

and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and

regulations.

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use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including

without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT

OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

https://toshiba.semicon-storage.com/

2019-01-07

Toshiba Electronic Devices & Storage Corporation

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