RN1226 [TOSHIBA]

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process); 东芝晶体管NPN硅外延式（ PCT程序）


型号：	RN1226
厂家：	TOSHIBA
描述：	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 东芝晶体管NPN硅外延式（ PCT程序）晶体小信号双极晶体管开关 PC
文件：	总8页 (文件大小：311K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1221,RN1222,RN1223,RN1224

RN1225,RN1226,RN1227

Unit: mm

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l High current type (I

= 800mA)

C(MAX)

l With built-in bias resistors.

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Low

VCE (sat)

l Complementary to RN2221~2227

Equivalent Circuit

Type No.

R1 (kΩ)

R2 (kΩ)

RN1221

RN1222

RN1223

RN1224

RN1225

RN1226

RN1227

2.2

4.7

2.2

4.7

JEDEC

―

EIAJ

0.47

TOSHIBA

Weight: 0.13g

2-4E1A

2.2

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1221~1227

Collector-emitter voltage

RN1221~1224

RN1225, 1226

RN1227

Emitter-base voltage

EBO

Collector current

800

300

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1221~1227

−55~150

°C

stg

2001-06-07

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

Electrical Characteristics (Ta = 25°C)

Test

Characteristic

Collector cut-off current

Symbol

Test Condition

= 50V, I = 0

Min

Typ.

Max

Unit

Circuit

―

―ꢀ

―

―ꢀ

―

―ꢀ

―

―ꢀ

―

100

500

7.14

3.25

1.52

0.71

0.682

0.65

0.703

―

CBO

CEO

RN1221~1227

= 50V, I = 0

RN1221

RN1222

3.85

1.75

0.82

0.38

0.365

0.35

0.378

= 10V, I = 0

RN1223

Emitter cut-off current

RN1224

EBO

RN1225

= 5V, I = 0

RN1226

RN1227

= 6V, I = 0

RN1221

RN1222

―

RN1223

―

DC current gain

= 5V, I = 100mA

―

RN1224

―

RN1225

―

RN1226

―

RN1227

―

RN1221

= 50mA, I = 2mA

Collector-emitter

saturation voltage

―

0.25

CE (sat)

RN1222~1227

RN1221

= 50mA, I = 1mA

―

―ꢀ

―

―ꢀ

―

―ꢀ

1.0

1.4

2.0

3.0

0.6

0.7

1.0

0.8

0.4

0.5

―

300

3.5

4.5

6.5

12.0

2.0

2.5

3.0

1.3

0.8

1.0

―

RN1222

RN1223

Input voltage (ON)

= 0.2V, I = 100mA

RN1224

I (ON)

RN1225

RN1226

RN1227

RN1221~1224

RM1225, 1226

RN1227

Input voltage (OFF)

= 5V, I = 0.1mA

I (OFF)

Translation frequency

RN1221~1227

= 5V, I = 20mA

MHz

Collector output

capacitance

= 10V, I = 0,

RN1221~1227

―ꢀ

―

f = 1MHz

2001-06-07

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

RN1221

RN1222

―

0.7

1.54

3.29

1.0

2.2

4.7

1.3

2.86

6.11

RN1223

Input resistor

Resistor ratio

―

kΩ

RN1224

RN1225

0.329

0.7

0.47

1.0

2.2

1.0

0.61

1.3

RN1226

RN1227

1.54

0.9

2.86

1.1

RN1221~1224

RN1225

0.0423 0.047 0.0517

R1/R2

―

RN1226

0.09

0.2

0.1

0.11

0.24

RN1227

0.22

2001-06-07

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

2001-06-07

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

2001-06-07

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

2001-06-07

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

2001-06-07

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

RESTRICTIONS ON PRODUCT USE

000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

2001-06-07

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