RN1417 [TOSHIBA]
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process); 东芝晶体管NPN硅外延式（ PCT程序）
| 型号： | RN1417 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 文件： | 总8页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RN1414~RN1418
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1414,RN1415,RN1416
RN1417,RN1418
Switching, Inverter Circuit, Interface Circuit
Unit: mm
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2414~RN2418
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1414
RN1415
RN1416
RN1417
RN1418
1
10
10
10
4.7
10
2.2
4.7
10
47
JEDEC
SC-236MOD
EIAJ
SC-59
TOSHIBA
Weight: 0.012g
2-3F1A
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
V
50
50
V
V
CBO
CEO
RN1414~1418
Collector-emitter voltage
RN1414
RN1415
RN1416
RN1417
RN1418
5
6
Emitter-base voltage
V
V
7
EBO
15
25
Collector current
I
100
200
150
−55~150
mA
mW
°C
C
Collector power dissipation
Junction temperature
Storage temperature range
P
C
RN1414~1418
T
j
T
°C
stg
1
2001-06-07
RN1414~RN1418
Electrical Characteristics (Ta = 25°C)
Test
Characteristic
Symbol
Test Condition
= 50V, I = 0
Min
Typ.
Max
Unit
Circuit
RN1414~1418
RN1414~1418
RN1414
I
I
V
V
V
V
V
V
V
―
―
―
―
―
―
―
―
100
500
nA
nA
CBO
CEO
CB
CE
EB
EB
EB
EB
EB
E
Collector cut-off
―
current
= 50V, I = 0
―
B
= 5V, I = 0
0.35
0.37
0.36
0.78
0.33
0.65
0.71
0.68
1.46
0.63
C
RN1415
= 6V, I = 0
C
Emitter cut-off current
I
―
mA
RN1416
= 7V, I = 0
C
EBO
RN1417
= 15V, I = 0
C
RN1418
= 25V, I = 0
C
RN1414~16,
18
50
―
―
DC current gain
h
―
―
V
I
= 5V, I = 10mA
C
FE
CE
RN1417
30
―
―
Collector-emitter
saturation voltage
RN1414~1418
V
= 5mA, I = 0.25mA
B
―
0.1
0.3
V
V
CE (sat)
C
0.6
0.7
0.8
1.5
2.5
0.3
0.3
0.3
0.3
0.5
―
2.0
2.5
2.5
3.5
10.0
0.9
1.0
1.1
2.3
5.7
―
RN1414
RN1415
RN1416
RN1417
RN1418
RN1414
RN1415
RN1416
RN1417
―
―
―
―
―
―
―
―
―
Input voltage (ON)
V
―
V
V
= 0.2V, I = 5mA
I (ON)
CE
C
Input voltage (OFF)
Transition frequency
V
―
= 5V, I = 0.1mA
C
V
I (OFF)
CE
RN1418
―
RN1414~1418
f
―
―
V
V
= 10V, I = 5mA
C
250
MHz
pF
T
CE
CB
Collector Output
capacitance
= 10V, I = 0,
E
RN1414~1418
C
ob
―
3.0
6.0
f = 1MHz
0.7
1.54
3.29
7.0
32.9
―
1.0
2.2
1.3
2.86
6.11
13.0
61.1
―
RN1414
RN1415
RN1416
RN1417
RN1418
RN1414
RN1415
RN1416
RN1417
RN1418
Input resistor
Resistor ratio
R1
―
―
kΩ
4.7
10.0
47.0
0.1
0.22
0.47
2.13
4.7
―
―
R1/R2
―
―
―
―
―
―
―
―
2
2001-06-07
RN1414~RN1418
3
2001-06-07
RN1414~RN1418
4
2001-06-07
RN1414~RN1418
5
2001-06-07
RN1414~RN1418
6
2001-06-07
RN1414~RN1418
Type Name
RN1414
Marking
RN1415
RN1416
RN1417
RN1418
7
2001-06-07
RN1414~RN1418
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
8
2001-06-07
相关型号：
RN1417(TE85R2)
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
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