RN1965 [TOSHIBA]

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process); 东芝晶体管NPN硅外延式( PCT程序)
RN1965
型号: RN1965
厂家: TOSHIBA    TOSHIBA
描述:

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
东芝晶体管NPN硅外延式( PCT程序)

晶体 晶体管 PC
文件: 总7页 (文件大小:266K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
                                                               
                                                               
RN1961~RN1966  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1961,RN1962,RN1963  
RN1964,RN1965,RN1966  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l Including two devices in US6 (ultra super mini type 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
· Complementary to RN2961~RN2966  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1961  
RN1962  
RN1963  
RN1964  
RN1965  
RN1966  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
JEDEC  
2.2  
4.7  
EIAJ  
TOSHIBA  
Weight: 6.8mg  
2-2J1B  
Equivalent Circuit (Top View)  
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1961~1966  
Collector-emitter voltage  
RN1961~1964  
RN1965, 1966  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
200  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
*: Total rating  
P *  
C
RN1961~1966  
T
j
T
°C  
stg  
1
2001-06-07  
                                                                           
                                                                           
RN1961~RN1966  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Test  
Characteristic  
Collector cut-off current  
Symbol  
Test Condition  
= 50V, I = 0  
Min  
Typ.  
Max  
Unit  
nA  
Circuit  
I
I
V
V
100  
500  
1.52  
0.71  
0.33  
0.15  
0.145  
0.138  
CBO  
CEO  
CB  
CE  
E
RN1961~1966  
= 50V, I = 0  
B
RN1961  
RN1962  
RN1963  
RN1964  
RN1965  
RN1966  
RN1961  
RN1962  
RN1963  
RN1964  
RN1965  
RN1966  
0.82  
0.38  
0.17  
0.082  
0.078  
0.074  
30  
V
V
= 10V, I = 0  
C
EB  
EB  
Emitter cut-off current  
I
mA  
EBO  
= 5V, I = 0  
C
50  
70  
DC current gain  
h
FE  
V
= 5V, I = 10mA  
V
CE  
C
80  
80  
80  
Collector-emitter  
saturation voltage  
I
I
= 5mA,  
C
B
RN1961~1966  
V
0.1  
0.3  
CE (sat)  
= 0.25mA  
RN1961  
RN1962  
1.1  
1.2  
1.3  
1.5  
0.6  
0.7  
1.0  
0.5  
2.0  
2.4  
3.0  
5.0  
1.1  
1.3  
1.5  
0.8  
RN1963  
Input voltage (ON)  
V
V
= 0.2V, I = 5mA  
V
I (ON)  
CE  
C
RN1964  
RN1965  
RN1966  
RN1961~1964  
RN1965, 1966  
RN1961~1966  
Input voltage (OFF)  
V
V
= 5V, I = 0.1mA  
V
I (OFF)  
CE  
C
Translation frequency  
f
V
V
= 10V, I = 5mA  
250  
MHz  
pF  
T
CE  
CB  
C
Collector output  
capacitance  
= 10V, I = 0,  
E
RN1961~1966  
C
ob  
3
6
f = 1MHz  
RN1961  
RN1962  
3.29  
7
4.7  
10  
6.11  
13  
RN1963  
15.4  
32.9  
1.54  
3.29  
0.9  
22  
28.6  
61.1  
2.86  
6.11  
1.1  
Input resistor  
Resistor ratio  
R1  
kΩ  
RN1964  
47  
RN1965  
2.2  
4.7  
1.0  
RN1966  
RN1961~1965  
RN1965  
R1/R2  
0.0421 0.0468 0.0515  
0.09 0.1 0.11  
RN1966  
2
2001-06-07  
RN1961~RN1966  
(Q1, Q2 Common)  
3
2001-06-07  
RN1961~RN1966  
(Q1, Q2 Common)  
4
2001-06-07  
RN1961~RN1966  
(Q1, Q2 Common)  
5
2001-06-07  
RN1961~RN1966  
Type Name  
RN1961  
Marking  
RN1962  
RN1963  
RN1964  
RN1965  
RN1966  
6
2001-06-07  
RN1961~RN1966  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
7
2001-06-07  

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