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RN4608 [TOSHIBA]

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process); 东芝晶体管PNP硅外延型（厘进程） NPN硅外延式（ PCT程序）
RN4608
型号： RN4608
厂家： TOSHIBA    TOSHIBA
描述：

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
东芝晶体管PNP硅外延型（厘进程） NPN硅外延式（ PCT程序）

晶体 晶体管 PC
文件： 总5页 (文件大小：153K)
中文：  中文翻译
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RN4608  
TOSHIBA Transistor  
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)  
RN4608  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit in mm  
l Includeing two devices in SM6 (super mini type with 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 22kΩ  
R2: 47kΩ  
(Q1, Q2 Common)  
Q1 Maximum Ratings (Ta = 25°C)  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 0.015g  
―
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
―
V
CBO  
V
CEO  
V
EBO  
−50  
−50  
−7  
V
V
2-3N1A  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
−100  
mA  
C
Q2 Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
7
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
1
2001-06-05  
                                                                                             
                                                                                             
RN4608  
Q1, Q2 Common Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector power dissipation  
Junction temperature  
Storage temperature range  
* Total rating  
P
*
300  
150  
mW  
°C  
C
T
j
T
−55~150  
°C  
stg  
Marking  
Equivalent Circuit (Top View)  
2
2001-06-05  
RN4608  
Q1 Electrical Characteristics (Ta = 25°C)  
Test  
Characteristic  
Symbol  
Test Condition  
= −50V, I = 0  
Min  
Typ.  
Max  
Unit  
nA  
Circuit  
I
I
―
―
―
―
―
―
―
―
―
V
V
V
V
―
―
―
―
−100  
−500  
−0.145  
―
CBO  
CEO  
CB  
CE  
EB  
CE  
E
Collector cut-off current  
= −50V, I = 0  
B
Emitter cut-off current  
DC current gain  
I
= −7V, I = 0  
−0.078  
80  
―
mA  
―
EBO  
C
h
= −5V, I = −10mA  
―
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Input voltage (ON)  
V
I
= −5mA, I = −0.25mA  
―
−0.1  
―
−0.3  
−2.6  
−1.16  
―
V
C
B
V
V
V
V
V
= −0.2V, I = −5mA  
−1.0  
−0.6  
―
V
I (ON)  
CE  
CE  
CE  
CB  
C
Input voltage (OFF)  
V
= −5V, I = −0.1mA  
―
V
I (OFF)  
C
f
= −10V, I = −5mA  
Transition frequency  
200  
3
MHz  
pF  
T
C
C
ob  
Collector output capacitance  
= −10V, I = 0  
―
6
E
Q2 Electrical Characteristics (Ta = 25°C)  
Test  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
nA  
Circuit  
I
I
―
―
―
―
―
―
―
―
―
V
V
V
V
= 50V, I = 0  
―
―
―
―
100  
500  
0.145  
―
CBO  
CEO  
CB  
CE  
EB  
CE  
E
Collector cut-off current  
= 50V, I = 0  
B
Emitter cut-off current  
DC current gain  
I
= 7V, I = 0  
0.078  
80  
―
mA  
―
EBO  
C
h
= 5V, I = 10mA  
―
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Input voltage (ON)  
V
I
= 5mA, I = 0.25mA  
―
0.1  
―
0.3  
2.6  
11.6  
―
V
C
B
V
V
V
V
V
= 0.2V, I = 5mA  
1.0  
0.6  
―
V
I (ON)  
CE  
CE  
CE  
CB  
C
Input voltage (OFF)  
V
= 5V, I = 0.1mA  
C
―
V
I (OFF)  
f
= 10V, I = 5mA  
C
Transition frequency  
250  
3
MHz  
pF  
T
C
ob  
= 10V, I = 0, f = 1 MHz  
E
Collector output capacitance  
―
6
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)  
Test  
Characteristic  
Input resistor  
Resistor ratio  
Symbol  
Test Condition  
Min  
Typ.  
22  
Max  
28.6  
Unit  
Circuit  
―
R1  
―
―
15.4  
kΩ  
R1/R2  
―
0.421 0.468 0.515  
―
3
2001-06-05  
RN4608  
4
2001-06-05  
RN4608  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
5
2001-06-05  

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