SF25JZ51 [TOSHIBA]

MEDIUM POWER CONTROL APPLICATIONS; 中功率控制中的应用
SF25JZ51
型号: SF25JZ51
厂家: TOSHIBA    TOSHIBA
描述:

MEDIUM POWER CONTROL APPLICATIONS
中功率控制中的应用

栅极 触发装置 可控硅整流器 功率控制 局域网
文件: 总6页 (文件大小:240K)
中文:  中文翻译
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SF25GZ51,SF25JZ51  
TOSHIBA THYRISTOR SILICON PLANAR TYPE  
SF25GZ51,SF25JZ51  
MEDIUM POWER CONTROL APPLICATIONS  
Unit in mm  
l Repetitive Peak OffState Voltage : V  
= 400, 600 V  
= 400, 600 V  
DRM  
RRM  
Repetitive Peak Reverse Voltage : V  
l Average OnState Current  
l Isolation Voltage  
: I  
: V  
= 25 A  
T (AV)  
Isol  
= 1500 V AC  
MAXIMUM RATINGS  
CHARACTERISTIC  
SYMBOL  
RATING  
400  
UNIT  
V
Repetitive Peak  
SF25GZ51  
SF25JZ51  
V
OffState Voltage and  
Repetitive Peak Reverse  
Voltage  
DRM  
RRM  
V
600  
NonRepetitive Peak  
Reverse Voltage  
SF25GZ51  
SF25JZ51  
500  
720  
V
V
RSM  
(NonRepetitive < 5 ms,  
T = 0~125°C)  
j
Average OnState Current  
I
25  
A
A
T (AV)  
(Half Sine Waveform)  
R.M.S OnState Current  
I
39  
T (RMS)  
JEDEC  
EIAJ  
TOSHIBA  
350 (50 Hz)  
385 (60 Hz)  
612  
Peak One Cycle Surge OnState  
Current (NonRepetitive)  
I
A
TSM  
1316A1B  
2
2
2
Weight : 5.9g  
I t Limit Value  
I t  
A s  
Critical Rate of Rise of OnState  
di / dt  
100  
A / µs  
Current  
(Note)  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Forward Gate Voltage  
Peak Reverse Gate Voltage  
Peak Forward Gate Current  
Junction Temperature  
P
5
0.5  
W
W
V
GM  
P
G (AV)  
V
10  
FGM  
V
-5  
V
RGM  
I
2
A
GM  
T
-40~125  
-40~125  
1500  
°C  
°C  
V
j
Storage Temperature Range  
Isolation Voltage (AC, t = 1 min.)  
T
stg  
V
Isol  
Note : di / dt Test Condition, i = 30mA, t = 10µs, t 250ns  
gw gr  
G
1
2001-05-10  
SF25GZ51,SF25JZ51  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
= V = Rated  
MIN.  
TYP.  
MAX. UNIT  
Repetitive Peak OffState Current and  
I
I
DRM  
RRM  
V
I
20  
µA  
DRM  
RRM  
Repetitive Peak Reverse Current  
Peak OnState Voltage  
Gate Trigger Voltage  
Gate Trigger Current  
Holding Current  
V
V
I
= 80 A  
1.5  
1.5  
20  
V
V
TM  
GT  
TM  
V
= 6 V, R = 10 Ω  
L
D
mA  
mA  
GT  
I
V
V
= 6 V, I = 500 mA  
TM  
100  
H
D
= Rated, Tc = 125°C  
DRM  
Critical Rate of Rise of OffState Voltage  
dv / dt  
50  
V / µs  
Exponential Rise  
Junction to Case  
Thermal Resistance  
R
1.3  
°C / W  
th (jc)  
MARKING  
NUMBER  
*1  
SYMBOL  
MARK  
SF25GZ51  
SF25JZ51  
F25GZ51  
F25JZ51  
TYPE  
Example  
8A : January 1998  
8B : February 1998  
8L : December 1998  
*2  
2
2001-05-10  
SF25GZ51,SF25JZ51  
3
2001-05-10  
SF25GZ51,SF25JZ51  
4
2001-05-10  
SF25GZ51,SF25JZ51  
5
2001-05-10  
SF25GZ51,SF25JZ51  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
6
2001-05-10  

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