SF25JZ51 [TOSHIBA]
MEDIUM POWER CONTROL APPLICATIONS; 中功率控制中的应用型号: | SF25JZ51 |
厂家: | TOSHIBA |
描述: | MEDIUM POWER CONTROL APPLICATIONS |
文件: | 总6页 (文件大小:240K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SF25GZ51,SF25JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF25GZ51,SF25JZ51
MEDIUM POWER CONTROL APPLICATIONS
Unit in mm
l Repetitive Peak Off−State Voltage : V
= 400, 600 V
= 400, 600 V
DRM
RRM
Repetitive Peak Reverse Voltage : V
l Average On−State Current
l Isolation Voltage
: I
: V
= 25 A
T (AV)
Isol
= 1500 V AC
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
400
UNIT
V
Repetitive Peak
SF25GZ51
SF25JZ51
V
Off−State Voltage and
Repetitive Peak Reverse
Voltage
DRM
RRM
V
600
Non−Repetitive Peak
Reverse Voltage
SF25GZ51
SF25JZ51
500
720
V
V
RSM
(Non−Repetitive < 5 ms,
T = 0~125°C)
j
Average On−State Current
I
25
A
A
T (AV)
(Half Sine Waveform)
R.M.S On−State Current
I
39
T (RMS)
JEDEC
EIAJ
TOSHIBA
―
350 (50 Hz)
385 (60 Hz)
612
Peak One Cycle Surge On−State
Current (Non−Repetitive)
―
I
A
TSM
13−16A1B
2
2
2
Weight : 5.9g
I t Limit Value
I t
A s
Critical Rate of Rise of On−State
di / dt
100
A / µs
Current
(Note)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
P
5
0.5
W
W
V
GM
P
G (AV)
V
10
FGM
V
-5
V
RGM
I
2
A
GM
T
-40~125
-40~125
1500
°C
°C
V
j
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
T
stg
V
Isol
Note : di / dt Test Condition, i = 30mA, t = 10µs, t ≤ 250ns
gw gr
G
1
2001-05-10
SF25GZ51,SF25JZ51
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
= V = Rated
MIN.
TYP.
MAX. UNIT
Repetitive Peak Off−State Current and
I
I
DRM
RRM
V
I
20
µA
―
―
DRM
RRM
Repetitive Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Holding Current
V
V
I
= 80 A
1.5
1.5
20
V
V
―
―
―
―
―
―
―
―
TM
GT
TM
V
= 6 V, R = 10 Ω
L
D
mA
mA
GT
I
V
V
= 6 V, I = 500 mA
TM
100
H
D
= Rated, Tc = 125°C
DRM
Critical Rate of Rise of Off−State Voltage
dv / dt
50
―
V / µs
―
―
Exponential Rise
Junction to Case
Thermal Resistance
R
―
1.3
°C / W
th (j−c)
MARKING
NUMBER
*1
SYMBOL
MARK
SF25GZ51
SF25JZ51
F25GZ51
F25JZ51
TYPE
Example
8A : January 1998
8B : February 1998
8L : December 1998
*2
2
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SF25GZ51,SF25JZ51
3
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SF25GZ51,SF25JZ51
4
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SF25GZ51,SF25JZ51
5
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SF25GZ51,SF25JZ51
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2001-05-10
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