SM8J48 [TOSHIBA]

AC POWER CONTROL APPLICATIONS; AC电源控制应用
SM8J48
型号: SM8J48
厂家: TOSHIBA    TOSHIBA
描述:

AC POWER CONTROL APPLICATIONS
AC电源控制应用

栅极 触发装置 三端双向交流开关 功率控制
文件: 总5页 (文件大小:221K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A  
TOSHIBA BIDIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE  
SM8G48,USM8G48,SM8J48,USM8J48  
SM8G48A,USM8G48A,SM8J48A,USM8J48A  
AC POWER CONTROL APPLICATIONS  
l Repetitive Peak OffState Voltage : V  
= 400, 600V  
DRM  
= 8A  
T (RMS)  
l R.M.S OnState Current  
l Gate Trigger Current  
: I  
: I  
: I  
= 30mA Max.  
GT  
GT  
= 20mA Max. (“A”Type)  
Unit: mm  
USM8G48, USM8J48, USM8G48A, USM8J48A  
SM8G48, SM8J48, SM8G48A, SM8J48A  
JEDEC  
JEITA  
TOSHIBA  
JEDEC  
JEITA  
TOSHIBA  
13-10J1A  
13-10J2A  
Weight: 1.7g  
MAXIMUM RATINGS  
CHARACTERISTIC  
SYMBOL  
RATING  
UNIT  
V
(U)SM8G48  
400  
600  
(U)SM8G48A  
Repetitive Peak  
Off-State Voltage  
V
DRM  
(U)SM8J48  
(U)SM8J48A  
R.M.S OnState Current  
I
8
A
A
T (RMS)  
80 (50Hz)  
88 (60Hz)  
Peak One Cycle Surge OnState  
I
TSM  
Current (Non-Repetitive)  
Note 1: V  
I
= 0.5×Rated  
DRM  
12A  
2
2
2
TM  
I t Limit Value  
I t  
32  
50  
A s  
t
10µs  
gw  
gr  
Critical Rate of Rise of OnState  
di / dt  
A / µs  
t
i
250ns  
Current  
(Note 1)  
= I ×2.0  
GT  
gp  
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Forward Gate Voltage  
Peak Forward Gate Current  
Junction Temperature  
P
5
0.5  
10  
W
W
V
A
°C  
°C  
GM  
P
G (AV)  
V
GM  
GM  
I
2
T
T
40~125  
40~125  
j
Storage Temperature Range  
stg  
1
2001-07-10  
SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
= Rated  
DRM  
MIN  
TYP.  
MAX  
UNIT  
µA  
Repetitive Peak OffState Current  
I
V
V
0.2  
20  
1.5  
1.5  
1.5  
DRM  
I
T2 (+), Gate (+)  
II  
T2 (+), Gate ()  
T2 (), Gate ()  
T2 (), Gate (+)  
T2 (+), Gate (+)  
T2 (+), Gate ()  
T2 (), Gate ()  
T2 (), Gate (+)  
T2 (+), Gate (+)  
T2 (+), Gate ()  
T2 (), Gate ()  
T2 (), Gate (+)  
= 12V  
D
Gate Trigger Voltage  
V
V
GT  
R = 20Ω  
L
III  
IV  
I
30  
30  
30  
II  
(U)SM8G48  
(U)SM8J48  
III  
IV  
I
Gate Trigger  
Current  
V = 12V  
D
I
mA  
GT  
R = 20Ω  
L
20  
20  
20  
II  
(U)SM8G48A  
(U)SM8J48A  
III  
IV  
Peak OnState Voltage  
Gate NonTrigger Voltage  
Holding Current  
V
V
I
= 12A  
TM  
1.5  
V
V
TM  
V
V
= Rated, Tc = 125°C  
GD  
D
D
I
= 12V, I  
= 1A  
50  
2.8  
mA  
H
TM  
Thermal Resistance  
R
Junction to Case, AC  
°C / W  
th (jc)  
(U)SM8G48  
(U)SM8J48  
10  
4
300  
200  
Critical Rate of  
Rise of OffState  
Voltage  
V
= Rated, T = 125°C  
DRM  
j
dv / dt  
V / µs  
V / µs  
Exponential Rise  
(U)SM8G48A  
(U)SM8J48A  
(U)SM8G48  
(U)SM8J48  
Critical Rate of  
Rise of OffState  
Voltage at  
V
= 400V, T = 125°C  
j
DRM  
(dv / dt) c  
(di / dt) c = 4.5A / ms  
(U)SM8G48A  
(U)SM8J48A  
Commutation  
MARKING  
NUMBER  
SYMBOL  
MARK  
SM8G48, SM8G48A, USM8G48, USM8G48A  
SM8J48, SM8J48A, USM8J48, USM8J48A  
SM8G48A, SM8J48A, USM8G48A, USM8J48A  
M8G48  
M8J48  
A
* 1  
* 2  
TYPE  
Example  
8A : January 1998  
8B : Febrary 1998  
* 3  
8L : December 1998  
2
2001-07-10  
SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A  
3
2001-07-10  
SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A  
4
2001-07-10  
SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A  
RESTRICTIONS ON PRODUCT USE  
000707EAA  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
5
2001-07-10  

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