SSM3J02T [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type; 东芝场效应晶体管的硅P沟道MOS型
| 型号： | SSM3J02T |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type |
| 文件： | 总5页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM3J02T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02T
Power Management Switch
High Speed Switching Applications
Unit: mm
·
·
·
Component package suitable for high-density mounting
Small Package
Low ON Resistance : R = 0.5 Ω (max) (@V
on
= −4 V)
GS
: R = 0.7 Ω (max) (@V
on
= −2.5 V)
GS
·
Low-voltage operation possible
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
DC
V
-30
±10
-1.5
V
V
DS
V
GSS
I
D
Drain current
A
I
DP
(Note2)
Pulse
-3.0
P
D
JEDEC
JEITA
―
―
Drain power dissipation (Ta = 25°C)
1250
mW
(Note1)
Channel temperature
Storage temperature range
T
T
150
-55 to 150
°C
°C
ch
TOSHIBA
2-3S1A
stg
Weight: 10 mg (typ.)
Note1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm2, t = 10 s)
Note2: The pulse width limited by max channel temperature.
Marking
Equivalent Circuit
3
3
D D
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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2002-01-17
SSM3J02T
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
= ±10 V, V = 0
Min
Typ.
Max
Unit
I
V
¾
-30
¾
¾
¾
±1
¾
mA
V
GSS
GS
DS
Drain-Source breakdown voltage
Drain Cut-off current
V
I
= -1 mA, V
= 0
GS
(BR) DSS
D
I
V
V
V
= -30 V, V = 0
GS
¾
-1
-1.1
¾
mA
V
DSS
DS
DS
DS
Gate threshold voltage
V
= -3 V, I = -0.1 mA
-0.6
0.6
¾
¾
th
D
Forward transfer admittance
|Y |
fs
= -3 V, I = -0.3 A
(Note3)
(Note3)
(Note3)
¾
S
D
I
I
= -0.3 A, V
= -4 V
0.4
0.55
150
21
0.5
0.7
¾
D
D
GS
GS
Drain-Source ON resistance
R
W
DS (ON)
= -0.3 A, V
= -2.5 V
¾
Input capacitance
C
V
V
V
= -10 V, V
= -10 V, V
= -10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
¾
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
¾
¾
C
t
¾
61
¾
Turn-on time
Turn-off time
¾
55
¾
V
V
= -15 V, I = -0.3 A,
D
DD
GS
Switching time
ns
= 0 to -2.5 V, R = 4.7 W
G
t
¾
52
¾
off
Note3: Pulse test
Switching Time Test Circuit
(a) Test circuit
0
10%
90%
(b) V
(c) V
IN
GS
0
V
OUT
IN
-2.5 V
DS (ON)
-2.5 V
V
90%
10%
OUT
10 ms
IN
V
DS
V
V
DD
V
DD
t
t
f
r
V
R
= -15 V
DD
G
t
t
off
on
= 4.7 W
<
D.U. 1%
V
: t , t < 5 ns
r f
IN
COMMON SOURCE
Ta = 25°C
Precaution
V
can be expressed as voltage between gate and source when low operating current value is I = -100 mA
D
th
for this product. For normal switching operation, V
requires higher voltage than V and V
th
GS (on)
GS (off)
requires lower voltage than V
.
th
(relationship can be established as follows: V
< V < V
)
GS (off)
th GS (on)
Please take this into consideration for using the device.
V
GS
recommended voltage of -2.5 V or higher to turn on this product.
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2002-01-17
SSM3J02T
I
– V
I – V
D GS
D
DS
-1.4
-1.2
-1
-10000
-1000
-100
-10
Common Source
Common Source
Ta = 25°C
-4.0 -2.5
-2.2
V
DS
= -3 V
-2.0
Ta = 100°C
-0.8
-0.6
-0.4
-0.2
0
25°C
-1
-1.8
-1.6
-25°C
-0.1
-0.01
V
= -1.4 V
GS
-1.5
(V)
-0.001
0
-0.5
-1
-2
-1.2
-4
0
-0.5
-1
-1.5
-2
-2.5
(V)
-3
Drain-source voltage
V
D
Gate-source voltage
V
GS
DS
R
– I
R
– Ta
DS (ON)
DS (ON)
1.5
1
1
0.8
0.6
0.4
0.2
0
Common Source
Ta = 25°C
Common Source
I = -0.3 A
D
V
GS
= -2.5 V
-4 V
V
GS
= -2.5 V
0.5
0
-4 V
-50
0
50
100
150
0
-0.2
-0.4
-0.6
-0.8
(A)
-1
Drain current
I
D
Ambient temperature Ta (°C)
|Y | – I
C – V
DS
fs
D
1000
10
Common Source
V
= -3 V
DS
Ta = 25°C
3
1
300
100
C
iss
C
oss
0.3
0.1
30
10
C
rss
Common Source
= 0 V
V
GS
0.03
0.01
3
1
f = 1 MHz
Ta = 25°C
-0.001
-0.01
-0.1
-1
-0.1
-1
-10
-100
(V)
-400
Drain current
I
D
(A)
Drain-Source voltage
V
DS
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SSM3J02T
t – I
P – Ta
D
D
10000
1.5
1.25
1
Common Source
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm2)
V
V
= -15 V
= 0 to -2.5 V
= 4.7 W
DD
t = 10 s
3000
1000
GS
R
G
Ta = 25°C
t
off
t
300
100
0.75
0.5
0.25
0
DC
t
on
30
10
t
r
-0.001
-0.01
-0.1
-1
-4
0
25
50
75
100
125
150
Drain current
I
D
(A)
Ambient temperature Ta (°C)
Safe operating area
-10
I
I
max (pulsed)*
D
1 ms*
max (continuous)
D
10 ms*
-1
10 s
DC operation
Ta = 25°C
-0.1
Mounted on FR4 board
(25.4 mm ´ 25.4 mm
´ 1.6 t,
-0.01
Cu Pad: 645 mm2)
*: Single nonrepetitive Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
DSS
max
-0.001
-0.1
-1
-10
-100
Drain-Source voltage
V
(V)
DS
r
th
– tw
1000
100
10
Single pulse
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 645 mm2)
1
0.001
0.01
0.1
1
10
100
1000
Pulse width tw (s)
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2002-01-17
SSM3J02T
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-01-17
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