SSM3J108TU [TOSHIBA]
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications; 场效应晶体管的硅P沟道MOS型高速开关应用
| 型号： | SSM3J108TU |
| 厂家： | 
TOSHIBA |
| 描述： | Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications |
| 文件： | 总5页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM3J108TU
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J108TU
High Speed Switching Applications
•
1.8V drive
Unit: mm
•
Low on-resistance:
R
on
R
on
R
on
= 363mΩ (max) (@V
= 230mΩ (max) (@V
= 158mΩ (max) (@V
= −1.8 V)
= −2.5 V)
= −4.0 V)
GS
GS
GS
2.1±0.1
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
1
2
3
Characteristic
Drain-Source voltage
Symbol
Rating
Unit
V
−20
± 8
V
V
DS
Gate-Source voltage
V
GSS
DC
I
−1.8
−3.6
800
D
Drain current
A
Pulse
I
DP
P
P
D (Note 1)
D (Note 2)
Drain power dissipation
Channel temperature
mW
500
T
150
°C
°C
ch
1: Gate
Storage temperature range
T
−55~150
stg
2: Source
3: Drain
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
UFM
JEDEC
JEITA
―
―
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Note 1: Mounted on ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 )
Note 2: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
V
V
I
I
= −1 mA, V
= −1 mA, V
= 0
−20
−12
⎯
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
Drain-Source breakdown voltage
= +8 V
GS
Drain cut-off current
I
V
V
V
V
= −20 V, V = 0
GS
−10
μA
μA
V
DSS
DS
GS
DS
DS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±8V, V = 0
⎯
−0.3
1.9
⎯
⎯
⎯
±1
−1.0
⎯
GSS
DS
V
= −3 V, I = −1 mA
th
D
⏐Y ⏐
= −3 V, I =− 0.8 A
(Note3)
(Note3)
3.2
125
S
fs
D
I
= −0.8 A, V
= −4.0 V
158
D
GS
Drain-Source on-resistance
R
mΩ
DS (ON)
I
I
= −0.4 A, V
= −0.1 A, V
= −2.5 V
= −1.8 V
(Note3)
(Note3)
⎯
⎯
170
230
230
363
D
D
GS
GS
Input capacitance
C
V
V
V
= −10 V, V
= −10 V, V
= −10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
⎯
⎯
⎯
⎯
⎯
⎯
250
45
⎯
⎯
⎯
⎯
pF
pF
iss
DS
DS
DS
GS
GS
GS
Output capacitance
C
oss
pF
Reverse transfer capacitance
C
35
rss
on
Turn-on time
Switching time
t
t
12
V
V
= −10 V, I = −0.25 A,
D
= 0~−2.5 V, R = 4.7 Ω
DD
GS
ns
V
G
Turn-off time
18
⎯
off
Drain-Source forward voltage
Note3: Pulse test
V
I
= 1.8A, V = 0 V
GS
(Note3)
0.85
1.2
DSF
D
1
2007-11-01
SSM3J108TU
Switching Time Test Circuit
(a) Test circuit
(b) V
(c) V
IN
0 V
OUT
10%
0
IN
90%
−2.5V
10 μs
R
−2.5 V
L
V
DD
V
OUT
DS (ON)
90%
10%
V
= -10 V
= 4.7 Ω
DD
R
G
<
D.U. 1%
V
DD
t
t
f
r
V
: t , t < 5 ns
IN
r
f
Common Source
t
t
off
on
Ta = 25°C
Marking
Equivalent Circuit (top view)
3
3
JJ1
1
2
1
2
Precaution
V
th
can be expressed as the voltage between gate and source when the low operating current value is I =−1mA for
D
this product. For normal switching operation, V
requires a higher voltage than V and V
requires a lower
GS (off)
GS (on)
th,
voltage than V
th.
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
2
2007-11-01
SSM3J108TU
ID - VGS
ID - VDS
-4.0
10
1
-5
-4
-3
-2
-1
-0
-10
Ta=85°C
0.1
-2.5
-1.8
0.01
0.001
0.0001
25°C
-25°C
-1.5
Common Source
Ta=25°C
Common Source
VDS=-3V
VGS=-1.2V
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
0
1
2
Gate-Source voltage VGS (V)
Drain-Source voltage VDS (V)
RDS(ON) - VGS
RDS(ON) - Ta
400
350
300
250
200
150
100
50
300
250
200
150
100
50
Common Source
Ta=25°C
Common Source
-0.8A
-1.8V,-0.1A
-0.4A
ID=-0.1A
-2.5V,-0.4A
VGS=-4V,ID=-0.8A
0
0
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-Source voltage VGS (V)
-60 -40 -20
0
20 40 60 80 100 120 140 160
Ambient temperature Ta(
)
℃
RDS(ON) - ID
Vth - Ta
400
350
300
250
200
150
100
50
-1
Common Source
ID=-1mA
-0.8
-0.6
-0.4
-0.2
-0
VDS=-3V
-1.8V
-2.5V
VGS=-4V
Common Source
Ta=25°C
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
-0
-1
-2
-3
-4
-5
Ambient temperature Ta(°C)
Drain current ID (A)
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2007-11-01
SSM3J108TU
|Yfs| - ID
IDR - VDS
Common Source
VGS=0V
Ta=25°C
10.0
-10
-1
25°C
-25°C
25°C
Ta=85°C
-25°C
1.0
-0.1
Ta=85°C
-0.01
-0.001
Common Source
VDS=-3V
Ta=25°C
0.1
-0.01
-0.1
-1
-10
0
0.2
0.4
0.6
0.8
1
Drain-Source voltage VDS (V)
Drain current ID (A)
t - ID
C - VDS
1000
100
10
1000
100
10
Common Source
VDD=10V
VGS=0 to 2.5V
Ta=25°C
toff
tf
Ciss
ton
tr
Common Source
Coss
Crss
VGS=0V
f=1MHz
Ta=25°C
1
0.1
1
10
100
-0.01
-0.1
-1
-10
Drain current ID (A)
Drain-Source voltage VDS (V)
Rth - tw
c
PD - Ta
1000
800
600
400
200
0
1000
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b
a
b
a
100
10
1
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
0.001
0.01
0.1
1
10
100
1000
0
20 40 60 80 100 120 140 160
Ambient temperature Ta(°C)
Pulse w idth tw (S)
4
2007-11-01
SSM3J108TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01
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