SSM3J109TU,LF(T [TOSHIBA]
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET;型号: | SSM3J109TU,LF(T |
厂家: | TOSHIBA |
描述: | Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET 开关 光电二极管 晶体管 |
文件: | 总5页 (文件大小:228K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SSM3J109TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J109TU
○Power Management Switch Applications
○High-Speed Switching Applications
Unit: mm
•
1.8 V drive
2.1±0.1
1.7±0.1
•
Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.8 V)
Ron = 172 mΩ (max) (@VGS = -2.5 V)
Ron = 130 mΩ (max) (@VGS = -4.0 V)
1
2
Absolute Maximum Ratings (Ta = 25˚C)
3
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
V
-20
± 8
DS
Gate-source voltage
V
V
GSS
DC
I
-2
D
Drain current
A
Pulse
I
-4
DP
P
P
(Note 1)
800
D
D
Drain power dissipation
mW
1. Gate
(Note 2)
500
2. Source
3. Drain
Channel temperature
Storage temperature
T
°C
°C
150
ch
T
stg
−55 to 150
UFM
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
―
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Note 1: Mounted on a ceramic board
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2)
Note 2: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
-20
-12
⎯
Typ.
⎯
Max
⎯
Unit
V
V
I
I
= -1 mA, V
= -1 mA, V
= 0
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-source breakdown voltage
V
= +8 V
⎯
⎯
Drain cutoff current
I
V
V
V
V
= -20 V, V
= 0
⎯
-10
±1
μA
μA
V
DSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±8 V, V
= 0
⎯
⎯
GSS
DS
V
= -3 V, I = -1 mA
-0.3
2.4
⎯
⎯
-1.0
⎯
th
D
⏐Y ⏐
= -3 V, I = -1 A
(Note 3)
(Note 3)
(Note 3)
(Note 3)
4
S
fs
D
I
I
I
= -1.0 A, V
= -0.5 A, V
= -0.2 A, V
= -4 V
91
130
172
300
⎯
D
D
D
GS
GS
GS
Drain-source ON-resistance
R
mΩ
= -2.5 V
= -1.8 V
⎯
123
175
335
70
DS (ON)
⎯
Input capacitance
C
V
V
V
= -10 V, V
= -10 V, V
= -10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
⎯
pF
pF
pF
iss
DS
DS
DS
GS
GS
GS
Output capacitance
C
⎯
⎯
oss
Reverse transfer capacitance
C
⎯
56
⎯
rss
on
Turn-on time
Switching time
t
t
V
V
= -10 V, I = -1A,
⎯
20
⎯
DD
GS
D
ns
V
= 0 to -2.5 V, R = 4.7 Ω
Turn-off time
G
⎯
20
⎯
off
Drain-source forward voltage
Note 3: Pulse test
V
I
= 2 A, V = 0
GS
(Note 3)
⎯
0.85
1.2
DSF
D
Start of commercial production
2005-08
1
2014-03-01
SSM3J109TU
Switching Time Test Circuit
(a) Test circuit
(b) V
(c) V
IN
0 V
10%
OUT
0
IN
90%
−2.5 V
−2.5V
R
L
V
DS (ON)
90%
10%
OUT
10 μs
V
DD
V
= − 10 V
DD
V
DD
R
G
= 4.7 Ω
t
t
f
r
Duty ≤ 1%
: t , t < 5 ns
Common Source
V
IN
r f
t
t
off
on
Ta = 25°C
Marking
Equivalent Circuit (top view)
3
3
JJ2
1
2
1
2
Notice on Usage
V
th
can be expressed as the voltage between gate and source when the low operating current value is I = -1 mA for
D
this product. For normal switching operation, V
requires a higher voltage than V and V
requires a lower
GS (off)
GS (on)
th
voltage than V .
th
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2014-03-01
SSM3J109TU
ID - VGS
ID - VDS
-5
-4
-3
-2
-1
0
-10
-1
-10
-4
Common Source
VDS = -3 V
Common Source
Ta = 25
-2.5
℃
-0.1
25
℃
-1.8
-25
℃
Ta = 85
-0.01
-0.001
-0.0001
℃
-1.5
VGS = -1.2 V
0
-0.2
-0.4
-0.6
-0.8
-1
0
-0.2 -0.4 -0.6 -0.8
-1
-1.2 -1.4 -1.6 -1.8
-2
-2.2 -2.4
Gate-Source Voltage VGS (V)
Drain-Source Voltage VDS (V)
RDS (ON) - Ta
RDS (ON) - VGS
300
250
200
150
100
50
300
200
100
0
Common Source
Ta = 25
Common Source
-0.5 A
ꢀ
℃
-1.8 V,-0.2 A
ID = -1 A
-0.2 A
-2.5 V,-0.5 A
VGS = -4 V,ID = -1 A
0
-60
-35
-10
15
40
65
90
115
140
0
1
2
3
4
5
6
7
8
9
10
Ambient Temperature Ta (
)
℃
Gate-Source Voltage VGS (V)
Vth - Ta
RDS (ON) - ID
-1.4
-1.2
-1
300
250
200
150
100
50
Common Source
Common Source
ID = -1 mA
VDS = -3 V
Ta = 25
℃
VGS = -1.8 V
-0.8
-0.6
-0.4
-0.2
-0
-2.5 V
-4 V
0
-25
0
25
50
75
100
125
150
0
-1
-2
-3
-4
-5
Ambient Temperature Ta (
)
℃
Drain Current ID (A)
3
2014-03-01
SSM3J109TU
|Yfs| - ID
IDR - VDS
10
10
1
Common Source
VDS = -3 V
Common Source
VGS = 0
Ta = 25
℃
25
℃
Ta = 25
℃
25
℃
Ta = 85
℃
-25
℃
-25
℃
1
0.1
Ta = 85
℃
0.01
0.001
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-0.01
-0.1
-1
-10
Drain-Source Voltage VDS (V)
Drain Current ID (A)
t - ID
C - VDS
1000
1000
100
10
Common Source
VDD = -10 V
VGS = 0
-2.5 V
~
Ta = 25
℃
toff
Ciss
100
10
1
tf
ton
tr
Coss
Crss
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25
℃
0.01
0.1
1
10
-0.1
-1
-10
-100
Drain Current ID (A)
Drain-Source Voltage VDS (V)
PD - Ta
Rth - tw
1000
1000
100
10
a: Mounted on an FR4 board
(25.4 mm x 25.4 mm x 1.6 mm)
Cu pad: 25.4 mm x 25.4 mm
b: Mounted on a ceramic board
(25.4 mm x 25.4 mm x 0.8 mm)
Cu pad: 25.4 mm x 25.4 mm
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
b
c
800
600
400
200
0
b
a
a
ꢀSingle Pulse
ꢀa: Mounted on a ceramic board
ꢀ(25.4 mm x 25.4 mm x 0.8 mm)
ꢀCu pad: 25.4 mm x 25.4 mm
ꢀb: Mounted on an FR4 board
ꢀ(25.4 mm x 25.4 mm x 1.6 mm)
ꢀCu pad: 25.4 mm x 25.4 mm
ꢀc: Mounted on an FR4 board
ꢀ(25.4 mm x 25.4 mm x 1.6 mm)
ꢀCu pad: 0.45 mm x 0.8 mm x 3
1
0.001
0.01
0.1
1
10
100
1000
0
20
40
60
80
100
120
140
160
Pulse Width tw (S)
ꢀ
Ambient Temperature Ta (°C)
4
2014-03-01
SSM3J109TU
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
5
2014-03-01
相关型号:
SSM3J110TU
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
TOSHIBA
SSM3J111TU
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
TOSHIBA
SSM3J112TU
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
TOSHIBA
SSM3J113TU
Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications
TOSHIBA
SSM3J115TU
Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Power Management Switch Applications
TOSHIBA
SSM3J117TU
Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
TOSHIBA
SSM3J118TU
Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications
TOSHIBA
©2020 ICPDF网 联系我们和版权申明