SSM3J338R,LF [TOSHIBA]

MOSFET P-CH 12V 6A SOT23F;


型号：	SSM3J338R,LF
厂家：	TOSHIBA
描述：	MOSFET P-CH 12V 6A SOT23F 开关光电二极管晶体管
文件：	总9页 (文件大小：354K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSM3J338R

MOSFETs Silicon P-Channel MOS

SSM3J338R

1. Applications

•

Power Management Switches

2. Features

(1) 1.8 V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V)

RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V)

RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V)

3. Packaging and Pin Assignment

1: Gate

2: Source

3: Drain

SOT-23F

Start of commercial production

2015-08

2015-08-31

Rev.1.0

SSM3J338R

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current

VDSS

VGSS

-12

±10

(Note 1)

(Note 1), (Note 2)

(Note 3)

-6

Drain current (pulsed)

Power dissipation

Channel temperature

Storage temperature

IDP

-14



t ≤ 10s

(Note 3)

Tch

Tstg

150

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the channel temperature does not exceed 150

Note 2: Pulse width (PW) ≤10 ms, duty ≤ 1%

Note 3: Device mounted on a FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2)

Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,

operators, soldering irons and other objects should be protected against anti-static discharge.

Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to

the board material, board area, board thickness and pad area. When using this device, be sure to take heat

dissipation fully into account.

2015-08-31

Rev.1.0

SSM3J338R

5. Electrical Characteristics

5.1. Static Characteristics (Unless otherwise specified, Ta = 25 )

Characteristics

Gate leakage current

Symbol

Test Condition

Min

Typ.

Max

Unit

IGSS

IDSS

VGS = ±8 V, VDS = 0 V



±1

-1

µA

Drain cut-off current

VDS = -12 V, VGS = 0 V

Drain-source breakdown voltage

Gate threshold voltage

V(BR)DSS ID = -1 mA, VGS = 0 V

-12

-7



(Note 1) V(BR)DSX ID = -1 mA, VGS = 5 V



(Note 2)

Vth

VDS = -3 V, ID = -1 mA

-0.3



-1.0

17.6

20.2

21.9

27.9

45.3



Drain-source on-resistance

(Note 3) RDS(ON) ID = -6.0 A, VGS = -8.0 V

ID = -6.0 A, VGS = -4.5 V

13.9

15.9

17.0

20.1

26.3

mΩ



ID = -6.0 A, VGS = -3.6 V



ID = -6.0 A, VGS = -2.5 V



ID = -4.5 A, VGS = -1.8 V



Forward transfer admittance

(Note 3)

|Yfs|

VDS = -3 V, ID = -2 A



Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for

this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 3: Pulse measurement.

5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 )

Characteristics

Input capacitance

Symbol

Test Condition

Min

Typ.

Max

Unit

Ciss

Crss

Coss

ton

VDS = -6 V, VGS = 0 V,

f = 1 MHz



1400

225

250



Reverse transfer capacitance

Output capacitance

Switching time (turn-on time)

Switching time (turn-off time)

VDD = -6 V, ID = -6 A

VGS = 0 to -4.5 V, RG = 10 Ω

toff

383

5.3. Switching Time Test Circuit

Fig. 5.3.1 Switching Time Test Circuit

Fig. 5.3.2 Input Waveform/Output Waveform

5.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1

Qgs1

Qgd

VDD = -6 V, VGS = -4.5 V,

ID = -6 A



19.5

1.4



Gate-drain charge

9.0

2015-08-31

Rev.1.0

SSM3J338R

5.5. Source-Drain Characteristics (Unless otherwise specified, Ta = 25 )

Characteristics

Diode forward voltage

Symbol

Test Condition

ID = 6 A, VGS = 0 V

Min

Typ.

0.75

Max

1.1

Unit

(Note 1)

VDSF



Note 1: Pulse measurement.

6. Marking

Fig. 6.1 Marking

2015-08-31

Rev.1.0

SSM3J338R

7. Characteristics Curves (Note)

Fig. 7.1 ID - VDS

Fig. 7.2 ID - VGS

Fig. 7.3 RDS(ON) - VGS

Fig. 7.4 RDS(ON) - ID

Fig. 7.5 RDS(ON) - Ta

Fig. 7.6 Vth - Ta

2015-08-31

Rev.1.0

SSM3J338R

Fig. 7.7 |Yfs| - ID

Fig. 7.8 IDR - VDS

Fig. 7.9 C - VDS

Fig. 7.10 t - ID

Fig. 7.11 Dynamic Input Characteristics

Fig. 7.12 rth - tw

2015-08-31

Rev.1.0

SSM3J338R

Fig. 7.13 PD - Ta

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

2015-08-31

Rev.1.0

SSM3J338R

Package Dimensions

Unit: mm

Weight: 0.011 g (typ.)

Package Name(s)

Nickname: SOT-23F

2015-08-31

Rev.1.0

SSM3J338R

RESTRICTIONS ON PRODUCT USE

•

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the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA

information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the

precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application

with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,

including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating

and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample

application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.

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•

PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE

EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY

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•

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applicable export laws and regulations.

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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING

AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2015-08-31

Rev.1.0

SSM3J338R,LF [TOSHIBA]

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