SSM3K35MFV(TL3T) [TOSHIBA]
Small Signal Field-Effect Transistor;
| 型号： | SSM3K35MFV(TL3T) |
| 厂家： | 
TOSHIBA |
| 描述： | Small Signal Field-Effect Transistor |
| 文件： | 总5页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM3K35MFV
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K35MFV
○High-Speed Switching Applications
Unit: mm
○Analog Switch Applications
1.2±0.05
0.8±0.05
•
•
1.2 V drive
Low ON-resistance : R = 20 Ω (max) (@V
= 1.2 V)
= 1.5 V)
= 2.5 V)
= 4.0 V)
on
GS
: R
: R
: R
=
=
=
8 Ω (max) (@V
4 Ω (max) (@V
3 Ω (max) (@V
on
on
on
GS
GS
GS
1
2
3
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Drain–source voltage
Symbol
Rating
Unit
V
V
20
±10
V
V
DSS
Gate–source voltage
GSS
1.Gate
2.Source
3.Drain
DC
I
180
D
Drain current
mA
ＶＥＳＭ
Pulse
I
360
DP
Drain power dissipation
Channel temperature
Storage temperature
P (Note 1)
D
150
mW
°C
T
ch
150
JEDEC
⎯
⎯
T
stg
−55 to 150
°C
JEITA
TOSHIBA
2-1L1B
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.585 mm2)
Weight: 1.5 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±10 V, V = 0 V
DS
⎯
20
⎯
⎯
⎯
±10
⎯
1
μA
V
GSS
GS
Drain–source breakdown voltage
Drain cutoff current
V
I
= 0.1 mA, V
= 0 V
= 0 V
(BR) DSS
D
GS
GS
I
V
V
V
= 20 V, V
⎯
μA
V
DSS
DS
DS
DS
Gate threshold voltage
V
= 3 V, I = 1 mA
0.4
115
⎯
⎯
1.0
⎯
3
th
D
Forward transfer admittance
⏐Y ⏐
= 3 V, I = 50 mA
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
⎯
mS
fs
D
I
I
I
I
= 50 mA, V
= 4 V
1.5
2
D
D
D
D
GS
GS
= 50 mA, V
= 2.5 V
⎯
4
Drain–source ON-resistance
R
Ω
DS (ON)
= 5 mA, V
= 5 mA, V
= 1.5 V
= 1.2 V
⎯
3
8
GS
GS
⎯
5
20
⎯
⎯
⎯
⎯
⎯
-1.2
Input capacitance
C
C
⎯
9.5
4.1
9.5
115
300
-0.9
iss
Reverse transfer capacitance
Output capacitance
V
= 3 V, V
= 0 V, f = 1 MHz
GS
pF
⎯
DS
rss
oss
on
C
t
⎯
Turn-on time
Switching time
⎯
V
V
= 3 V, I = 50 mA,
DD
GS
D
ns
V
= 0 to 2.5 V
⎯
Turn-off time
t
off
Drain–source forward voltage
V
I
= - 180 mA, V = 0 V
GS
(Note 2)
⎯
DSF
D
Note 2: Pulse test
Start of commercial production
2008-01
1
2014-03-01
SSM3K35MFV
Switching Time Test Circuit
(a) Test Circuit
(b) V
(c) V
IN
2.5 V
0 V
OUT
90%
2.5 V
IN
10%
0
R
L
10 μs
V
DD
V
OUT
DD
10%
90%
V
= 3 V
DD
Duty ≤ 1%
: t , t < 5 ns
V
IN
(Z
V
r f
= 50 Ω)
DS (ON)
t
t
f
r
out
Common Source
t
t
off
on
Ta = 25°C
Marking
Equivalent Circuit (top view)
3
3
KZ
1
2
1
2
Notice on Usage
V
th
can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for
D
this product. For normal switching operation, V
voltage than V (The relationship can be established as follows: V
th.
requires a higher voltage than V and V
requires a lower
GS (off)
GS (on)
th
)
GS (on).
< V < V
GS (off)
th
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2014-03-01
SSM3K35MFV
I
– V
I – V
D GS
D
DS
1000
100
10
400
300
Common Source
Common Source
V = 3 V
DS
10
4
2.5
Ta = 25°C
1.8
1.5
Ta = 100°C
200
25°C
−25°C
1
100
0
0.1
V
= 1.2 V
GS
0.01
0
0.5
1
1.5
2
0
1
2
3
Drain–source voltage
V
(V)
Gate–source voltage
V
(V)
DS
GS
R
– V
R
– V
DS (ON)
GS
DS (ON)
GS
10
10
Common Source
= 5 mA
Common Source
I = 50 mA
D
I
D
5
5
25°C
25°C
Ta = 100°C
−25°C
Ta = 100°C
−25°C
0
0
0
0
2
4
6
8
10
2
4
6
8
10
Gate–source voltage
V
(V)
Gate–source voltage
V
(V)
GS
GS
R
– I
R
– Ta
DS (ON)
D
DS (ON)
10
10
Common Source
Common Source
Ta = 25°C
V
= 1.2 V, I = 5 mA
D
GS
V
= 1.2 V
GS
5
5
1.5 V
1.5 V, 5 mA
2.5 V
4 V
2.5 V, 50 mA
4 V, 50 mA
0
0
1
0
−50
10
100
1000
50
100
150
Drain current
I
(mA)
Ambient temperature Ta (°C)
D
3
2014-03-01
SSM3K35MFV
⎪Y ⎪ – I
fs
D
V
– Ta
th
1.0
0.5
0
Common Source
500
300
I
V
= 1 mA
= 3 V
D
DS
100
50
30
10
5
3
Common Source
V
= 3 V
DS
Ta = 25°C
1
1
10
100
1000
−50
0
50
100
150
Drain current
I
(mA)
D
Ambient temperature Ta (°C)
I
– V
C – V
DS
DR
DS
100
100
50
Common Source
VGS = 0 V
D
IDR
100
10
G
25°C
S
10
5
C
iss
Ta = 100°C
−25°C
1
C
oss
Common Source
= 0 V
V
GS
f = 1 MHz
Ta = 25°C
0.1
0.01
C
rss
1
0.5
1
5
10
50 100
0.1
0
−0.5
−1
−1.5
Drain–source voltage
V
(V)
Drain – Source voltage
V
(V)
DS
DS
t – I
D
P
– Ta
D
5000
3000
250
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 585 mm2)
Common Source
t
off
V
V
= 3 V
= 0 to 2.5 V
DD
GS
200
150
100
50
Ta = 25°C
t
f
1000
500
300
t
on
100
50
30
t
r
10
0.1
0
0
1
10
100
1000
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
Drain current
I
(mA)
D
4
2014-03-01
SSM3K35MFV
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
5
2014-03-01
相关型号：
SSM3K35MFV,L3F(B
TRANSISTOR 180 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-1L1B, VESM, 3 PIN, FET General Purpose Small Signal
TOSHIBA
SSM3K36TU
TRANSISTOR 500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, UFM, 2-2U1A, 3 PIN, FET General Purpose Small Signal
TOSHIBA
SSM3K37CT
TRANSISTOR 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, CST3, 2-1J1B, 3 PIN, FET General Purpose Small Signal
TOSHIBA
SSM3K37FS
TRANSISTOR 200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SSM, 2-2H1B, 3 PIN, FET General Purpose Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明