SSM5G10TU 概述
DC-DC Converter Applications DC- DC转换器应用 小信号场效应晶体管
SSM5G10TU 规格参数
生命周期: | End Of Life | 包装说明: | SMALL OUTLINE, R-PDSO-F5 |
针数: | 5 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.69 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 1.5 A |
最大漏源导通电阻: | 0.213 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F5 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
SSM5G10TU 数据手册
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PDF下载SSM5G10TU
Silicon P Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5G10TU
DC-DC Converter Applications
•
•
1.8-V drive
Unit: mm
Combines a P-channel MOSFET and a Schottky barrier diode in one
package.
•
Low R and Low V
DS(ON) F
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V
−20
± 8
V
V
DS
V
GSS
DC
Drain current
I
−1.5
−3.0
0.5
D
A
Pulse
I
(Note 2)
(Note 1)
DP
P
D
Drain power dissipation
Channel temperature
W
t = 10 s
0.8
UFV
T
150
°C
ch
Schottky Barrier Diode (Ta = 25°C)
JEDEC
―
―
Characteristics
Symbol
Rating
Unit
JEITA
Repetitive peak reverse voltage
Average forward current
V
20
0.7
V
A
RRM
TOSHIBA
2-2R1A
I
F(AV)
Weight: 7 mg (typ.)
Peak one cycle surge forward current
Junction temperature
I
2 (50 Hz)
125
A
FSM
T
j
°C
MOSFET and Diode (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
°C
Storage temperature range
T
stg
−55 to 125
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2
Marking
Equivalent Circuit (top view)
5
4
5
4
KET
2
1
3
1
2
3
1
2008-09-27
SSM5G10TU
MOSFET
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
V
V
I
I
= -1 mA, V
= -1 mA, V
= 0 V
-20
-12
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-source breakdown voltage
= +8 V
Drain cutoff current
I
V
V
V
V
= -20 V, V
= 0 V
⎯
-10
±1
μA
μA
V
DSS
GSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±8 V, V
= 0 V
⎯
⎯
DS
V
= -3 V, I = -1 mA
-0.3
1.6
⎯
⎯
-1.0
⎯
th
D
⏐Y ⏐
= -3 V, I = -1 A
(Note 2)
(Note 2)
(Note 2)
(Note 2)
3.2
160
210
280
250
43
S
fs
D
I
I
I
= -1.0 A, V
= -0.8 A, V
= -0.1 A, V
= -4 V
213
294
430
⎯
D
D
D
GS
GS
GS
Drain-source ON-resistance
R
mΩ
pF
= -2.5 V
= -1.8 V
⎯
DS (ON)
⎯
Input capacitance
C
C
⎯
iss
V
= -10 V, V
= 0 V, f = 1 MHz
GS
Output capacitance
Reverse transfer capacitance
Total Gate Charge
⎯
⎯
DS
oss
C
⎯
35
⎯
rss
Q
g
⎯
6.4
4.5
1.9
12
⎯
V
V
= -10 V, I = -1.5 A
D
DS
GS
nC
Gate−Source Charge
Gate−Drain Charge
Q
gs
Q
gd
⎯
⎯
= -4 V
⎯
⎯
Turn-on time
Switching time
t
on
t
off
V
V
= -10 V, I = -1 A,
⎯
⎯
DD
GS
D
ns
V
= 0 to -2.5 V, R = 4.7 Ω
⎯
⎯
Turn-off time
11.2
0.88
G
⎯
1.2
Drain-source forward voltage
Note 2: Pulse test
V
I
= 1.5 A, V = 0 V
GS
(Note 2)
DSF
D
Switching Time Test Circuit
(a) Test Circuit
0 V
(b) V
(c) V
10%
IN
OUT
0
IN
90%
−2.5 V
−2.5V
R
L
V
DS (ON)
90%
OUT
10 μs
V
DD
V
= − 10 V
= 4.7 Ω
10%
DD
V
DD
R
G
t
t
f
r
D.U. ≤ 1%
: t , t < 5 ns
Common Source
V
IN
r f
t
t
off
on
Ta = 25°C
Precaution
V
th
can be expressed as voltage between gate and source when the low operating current value is I
-1 mA for
D =
this product. For normal switching operation, V
requires a higher voltage than V and V
requires a
GS (off)
GS (on)
th
lower voltage than V .
th
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Be sure to take this into consideration when using the device.
2
2008-09-27
SSM5G10TU
Schottky Barrier Diode
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
I
I
= 0.5 A
= 0.7 A
⎯
⎯
⎯
⎯
0.32
0.36
25
0.39
0.43
150
⎯
V
V
FM (1)
FM (2)
F
F
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
I
V
V
= 6 V
μA
pF
RRM
R
R
C
= 0 V, f = 1 MHz
143
T
Precaution
The Schottky barrier diode in this device has large reverse current leakage compared to typical switching diodes. Thus,
excessive operating temperature or voltage may cause thermal runaway. To avoid this problem, be sure to take both
forward and reverse loss into consideration.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board
material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into
account.
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2008-09-27
SSM5G10TU
MOSFET
I
– V
I – V
D GS
D
DS
-3
-2
-1
-10
-1
-8.0 V
-4.0 V
-2.5 V
Common Source
= -3 V
V
DS
Ta = 100 °C
-0.1
-1.8 V
-1.5 V
-0.01
25 °C
− 25 °C
-0.001
V
=- 1.2 V
-0.6
GS
Common Source
Ta = 25 °C
0
-0.0001
0
-0.2
-0.4
-0.8
-1.0
0
-1.0
-2.0
-3.0
Drain-source voltage
V
(V)
DS
Gate-source voltage
V
(V)
GS
R
– V
GS
R
– I
D
DS (ON)
DS (ON)
1000
800
1000
800
Common Source
I
=−1.0A
D
Ta = 25°C
Common Source
600
600
400
200
0
400
25 °C
-1.8 V
-2.5 V
Ta = 100 °C
− 25 °C
200
0
V
= -4.0 V
GS
-2
0
-2.0
-4.0
-6.0
-8.0
0
-1
-3
Gate-source voltage
V
(V)
GS
Drain current
I
(A)
D
R
– Ta
V
– Ta
th
DS (ON)
1000
800
-1.0
Common Source
= -3.0 V
Common Source
V
DS
= -1 mA
I
D
600
-0.5
-0.8 A / -2.5 V
I
= −0.1 A / V
= -1.8 V
GS
D
400
200
0
-1.0 A / -4.0 V
0
−50
0
50
100
150
−50
0
50
100
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
4
2008-09-27
SSM5G10TU
MOSFET
I
– V
DS
DR
|Y | – I
fs
D
10
10
1
Common Source
Common Source
= -3.0 V
V
= 0 V
GS
V
DS
D
Ta = 25°C
3
1
I
G
DR
S
25 °C
0.1
Ta =100 °C
0.3
0.01
−25 °C
0.001
0.1
-0.01
-1
-0.1
-10
0
0.5
1.0
1.5
Drain current
I
(A)
Drain-source voltage
V
(V)
D
DS
C – V
t – I
D
DS
1000
100
1000
Common Source
V
V
= -10 V
500
300
DD
GS
= 0 to -2.5 V
C
iss
Ta = 25 °C
= 4.7 Ω
t
off
R
G
100
t
f
50
30
C
C
oss
rss
t
on
10
10
Common Source
Ta = 25°C
5
3
t
r
f = 1 MHz
V
= 0 V
GS
1
-0.1
1
-0.01
-1
-10
-100
-0.1
-1
-10
Drain-source voltage
V
(V)
Drain current
I
(A)
DS
D
Dynamic Input Characteristic
-10
-8
Common Source
= -1.5 A
I
D
Ta = 25°C
-6
-4
-2
0
V
= -10 V
V
= -16 V
DD
DD
0
10
20
Total Gate Charge Qg (nC)
5
2008-09-27
SSM5G10TU
Schottky Barrier Diode
P
– I
F(AV)
F(AV)
180
I
– V
F
F
1000
100
0.4
DC
0.3
0.2
0.1
0
120
90
60
α = 30°
10
Rectangular
waveform
1
0°
α 360°
Conduction angle α
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.5
0.3
0.1
0.2
0.4
Average forward current
I
(A)
F (AV)
Instantaneous forward voltage
V
(V)
F
C
T
– V
(typical)
R
Ta max – I
F (AV)
1000
140
f = 1 MHz
Ta = 25°C
120
100
80
60
40
20
0
100
10
1
DC
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
0.1
100
Average forward current
I
(A)
F (AV)
Reverse voltage
V
(V)
R
6
2008-09-27
SSM5G10TU
Schottky Diode
I
– V
R
R
I
– T
(typical)
R
j
1000
100
10
Pulse test
30
15
10
100
5
1
25 °C
10
0.1
0.01
V
= 3 V
R
1
0
50
100
150
0
10
20
5
15
25
Junction temperature
T
(°C)
j
Reverse voltage
V
(V)
R
P
– V
(typical)
R (AV)
R
1.6
1.2
Rectangular waveform
360°
0°
DC
300
V
R
α
Conduction angle α
240
180
T = 125°C
j
0.8
0.4
0
120
α = 60°
15
0
20
5
10
Reverse voltage
V
(V)
R
7
2008-09-27
SSM5G10TU
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
8
2008-09-27
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