SSM5H12TU [TOSHIBA]
DC-DC Converter Applications; DC- DC转换器应用
| 型号： | SSM5H12TU |
| 厂家： | 
TOSHIBA |
| 描述： | DC-DC Converter Applications |
| 文件： | 总8页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM5H12TU
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H12TU
DC-DC Converter Applications
•
•
1.8-V drive
Unit: mm
Combined an N-ch MOSFET and a Schottky barrier diode in one
package.
•
Low R and Low V
DS (ON) F
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
V
V
30
± 12
1.9
3.8
0.5
0.8
150
V
V
DSS
GSS
DC
Drain current
I
D
A
Pulse
I
DP
P
(Note 1)
t = 10s
D
Power dissipation
W
UFV
Channel temperature
T
°C
ch
Schottky Barrier Diode (Ta = 25°C)
JEDEC
―
―
Characteristics
Symbol
Rating
Unit
JEITA
Repetitive peak reverse voltage
Average forward current
V
30
0.7
V
A
RRM
TOSHIBA
2-2R1A
I
F(AV)
Weight: 7 mg (typ.)
Peak one cycle surge forward current
Junction temperature
I
2 (50Hz)
125
A
FSM
T
j
°C
MOSFET and Diode (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
°C
Storage temperature range
T
stg
−55 to 125
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
Marking
Equivalent Circuit (top view)
5
4
5
4
KEW
1
2
3
1
2
3
1
2008-09-27
SSM5H12TU
MOSFET
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
V
V
I
I
= 1 mA, V
= 1 mA, V
= 0 V
30
18
⎯
⎯
0.4
2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-source breakdown voltage
= −12 V
Drain cut-off current
I
V
V
V
V
= 30 V, V
= 0 V
⎯
1
μA
μA
V
DSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ± 12 V, V
= 0 V
⎯
±1
1.0
⎯
GSS
DS
V
= 3 V, I = 1 mA
⎯
th
D
⏐Y ⏐
= 3 V, I = 1.0 A
(Note 2)
(Note 2)
(Note 2)
(Note 2)
3.9
103
125
165
123
43
S
fs
D
I
I
I
= 1.0 A, V
= 0.8 A, V
= 0.5 A, V
= 4.0 V
= 2.5 V
= 1.8 V
133
177
296
⎯
D
D
D
GS
GS
GS
Drain–source ON-resistance
R
mΩ
pF
DS (ON)
Input capacitance
C
C
iss
V
= 15V, V
= 0 V, f = 1 MHz
GS
Output capacitance
Reverse transfer capacitance
Total gate charge
⎯
DS
oss
C
18
⎯
rss
Q
g
1.9
1.1
0.8
9.2
6.4
-0.83
⎯
V
V
= 15V, I = 1.9 A
D
DS
GS
nC
Gate-source charge
Gate-drain charge
Q
gs
Q
gd
⎯
= 4 V
⎯
Turn-on time
Switching time
t
t
V
V
= 15 V, I = 1.0 A,
⎯
on
off
DD
GS
D
ns
V
= 0 to 2.5 V, R = 4.7 Ω
Turn-off time
⎯
G
Drain-source forward voltage
Note 2: Pulse test
V
I
= -1.9 A, V = 0 V
GS
(Note 2)
-1.2
DSF
D
Switching Time Test Circuit
(a) Test Circuit
(b) V
IN
2.5V
0 V
90%
OUT
2.5 V
0
IN
10%
V
DD
(c) V
OUT
10 μs
= 15 V
90%
10%
V
DD
V
R
DD
V
DS (ON)
= 4.7 Ω
t
f
t
r
G
Duty.≤ 1%
: t , t < 5 ns
t
t
off
V
on
IN
r f
Common Source
Ta = 25°C
Precaution
V
th
can be expressed as voltage between gate and source when the low operating current value is I
1 mA for
D =
this product. For normal switching operation, V
requires a higher voltage than V and V
requires a
GS (off)
GS (on)
th
lower voltage than V .
th
(The relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Be sure to take this into consideration when using the device.
2
2008-09-27
SSM5H12TU
Schottky Barrier Diode
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
I
I
= 0.5 A
= 0.7 A
⎯
⎯
⎯
⎯
0.34
0.37
60
0.41
0.44
200
⎯
V
V
FM (1)
FM (2)
F
F
Peak forward voltage
Repetitive peak reverse current
Total capacitance
I
V
V
= 15 V
μA
pF
RRM
R
R
C
= 0 V, f = 1 MHz
139
T
Precaution
The Schottky barrier diode in this device has large reverse current leakage compared to typical switching diodes. Thus,
excessive operating temperature or voltage may cause thermal runaway. To avoid this problem, be sure to take both
forward and reverse loss into consideration.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
Thermal resistance R
and power dissipation PD vary depending on board material, board area, board thickness
th (j-a)
and pad area. When using this device, please take heat dissipation into consideration.
3
2008-09-27
SSM5H12TU
MOSFET
I
– V
I
– V
GS
D
DS
D
4
10
1
Common Source
Common Source
= 3 V
10 V
2.5 V
Ta = 25 °C
V
DS
Pulse test
Pulse test
4.0 V
1.8 V
3
2
1
0.1
1.5 V
Ta = 100 °C
25 °C
0.01
− 25 °C
0.001
V
= 1.2 V
GS
0
0.0001
0
0.2
0.4
0.6
0.8
1.0
0
1.0
2.0
Drain–source voltage
V
(V)
DS
Gate–source voltage
V
(V)
GS
R
– V
GS
R
– I
D
DS (ON)
DS (ON)
400
400
I
=1.0A
D
Common Source
Pulse test
Common Source
Ta = 25°C
Pulse test
300
200
300
200
25 °C
1.8 V
2.5 V
Ta = 100 °C
− 25 °C
100
0
100
0
V
= 4.0 V
GS
0
2
4
6
8
10
12
2
0
1
3
4
Gate–source voltage
V
(V)
GS
Drain current
I
(A)
D
R
– Ta
V
– Ta
th
DS (ON)
1.0
0.5
0
400
Common Source
= 3 V
Common Source
Pulse test
V
DS
I
= 1 mA
D
300
200
I
= 0.5 A / V
= 1.8 V
GS
D
0.8 A / 2.5 V
1.0 A / 4.0 V
100
0
−50
0
50
100
150
−50
0
50
100
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
4
2008-09-27
SSM5H12TU
MOSFET
I
– V
DR
DS
|Y | – I
fs
D
10
10
1
Common Source
V
= 3 V
DS
Ta = 25°C
Pulse test
3
1
25 °C
0.1
Common Source
= 0 V
Ta =100 °C
V
GS
Pulse test
D
0.3
0.01
I
G
DR
−25 °C
S
0.001
0.1
0.01
1
0.1
10
0
–0.5
–1.0
–1.5
Drain current
I
(A)
Drain–source voltage
V
(V)
D
DS
C – V
t – I
D
DS
1000
100
1000
Common Source
V
V
= 15 V
DD
GS
500
300
= 0 to 2.5 V
t
off
Ta = 25 °C
= 4.7 Ω
R
G
C
iss
t
f
100
50
30
C
oss
C
rss
10
10
t
t
on
Common Source
Ta = 25°C
5
3
f = 1 MHz
r
V
= 0 V
GS
1
0.1
1
0.01
1
10
100
0.1
1
10
Drain–source voltage
V
(V)
Drain current
I
(A)
DS
D
Dynamic Input Characteristic
10
Common Source
= 1.9 A
I
D
Ta = 25°C
8
6
V
= 15 V
V
= 24 V
DD
DD
4
2
0
0
1
2
3
4
Total Gate Charge
Q
g
(nC)
5
2008-09-27
SSM5H12TU
Schottky Barrier Diode
P
– I
F(AV)
F(AV)
I
– V
F
F
0.5
1000
100
0.4
0.3
0.2
0.1
0
DC
180
120
90
60
25 °C
α = 30°
10
Rectangular
waveform
1
0°
α 360°
Conduction angle α
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.5
0.2
0.3
0.1
0.4
F
Average forward current
I
(A)
F (AV)
Instantaneous forward voltage
V
(V)
C
T
– V
(typical)
R
Ta max – I
F (AV)
100
10
1
140
120
100
80
f = 1 MHz
Ta = 25°C
DC
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
Average forward current
I
(A)
F (AV)
Reverse voltage
V
(V)
R
6
2008-09-27
SSM5H12TU
Schottky Barrier Diode
I
– V
R
R
I
– T
(typical)
R
j
1000
100
1000
100
Pulse test
30
20
15
10
10
1
5
25 °C
10
0.1
V
= 3 V
R
Pulse test e
0.01
1
0
50
100
150
0
10
20
25
5
15
30
Junction temperature
T
(°C)
j
Reverse voltage
V
(V)
R
P
– V
(typical)
R (AV)
R
8
6
Rectangular waveform
360°
0°
DC
V
R
300
α
Conduction angle α
240
180
T = 125°C
j
4
2
0
120
α = 60°
20
5
10
15
0
Reverse voltage
V
(V)
R
7
2008-09-27
SSM5H12TU
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
8
2008-09-27
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