SSM6J06FU_07 [TOSHIBA]
Power Management Switch; 电源管理开关
| 型号： | SSM6J06FU_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Power Management Switch |
| 文件： | 总6页 (文件大小：667K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6J06FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J06FU
Power Management Switch
Unit: mm
High Speed Switching Applications
•
•
Small package
Low on resistance: Ron = 0.5 Ω max (V
= −4 V)
GS
GS
: Ron = 0.7 Ω max (V
= −2.5 V)
•
Low gate threshold voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
−20
±12
V
V
DS
Gate-source voltage
V
GSS
DC
I
−650
−1300
D
Drain current
mA
Pulse
I
DP
P
D
Drain power dissipation (Ta = 25°C)
300
mW
(Note 1)
Channel temperature
T
150
°C
°C
ch
JEDEC
JEITA
―
―
Storage temperature range
T
stg
−55~150
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 0.32 mm2 × 6) Figure 1.
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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SSM6J06FU
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±12 V, V
= 0
⎯
−20
⎯
⎯
⎯
±1
⎯
μA
V
GSS
GS
DS
Drain-source breakdown voltage
Drain cut-off current
V
I
= −1 mA, V
= 0
(BR) DSS
D
GS
I
V
V
V
= −20 V, V
= 0
⎯
−1
−1.1
⎯
μA
V
DSS
DS
DS
DS
GS
Gate threshold voltage
V
= −3 V, I = −0.1 mA
−0.6
0.6
⎯
⎯
th
D
Forward transfer admittance
⎪Y ⎪
fs
= −3 V, I = −0.3 A
(Note 2)
(Note 2)
(Note 2)
⎯
S
D
I
I
= −0.3 A, V
= −4 V
0.4
0.55
160
25
0.5
0.7
⎯
D
D
GS
GS
Drain-source ON resistance
R
Ω
DS (ON)
= −0.3 A, V
= −2.5 V
⎯
Input capacitance
C
V
V
V
= −10 V, V
= −10 V, V
= −10 V, V
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
⎯
pF
pF
pF
iss
rss
oss
on
DS
DS
DS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
⎯
⎯
C
t
⎯
90
⎯
Turn-on time
Switching time
⎯
27
⎯
V
V
= −10 V, I = −0.3 A,
D
DD
GS
ns
= 0~−2.5 V, R = 4.7 Ω
G
Turn-off time
t
⎯
43
⎯
off
Note 2: Pulse test
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I = −100 μA for
D
this product. For normal switching operation, V
requires higher voltage than V and V requires lower
GS (off)
GS (on)
th
voltage than V
.
th
(Relationship can be established as follows: V
< V < V
)
GS (off)
th
GS (on)
Please take this into consideration for using the device.
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SSM6J06FU
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SSM6J06FU
Figure 1 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6
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SSM6J06FU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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