SSM6K341NU [TOSHIBA]
Power Field-Effect Transistor;型号: | SSM6K341NU |
厂家: | TOSHIBA |
描述: | Power Field-Effect Transistor 开关 脉冲 光电二极管 晶体管 |
文件: | 总8页 (文件大小:264K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SSM6K341NU
MOSFETs Silicon N-channel MOS (U-MOS-H)
SSM6K341NU
1. Applications
•
Power Management Switches
•
DC-DC Converters
2. Features
(1) 175 MOSFET
(2) AEC-Q101 qualified (Note 1)
(3) 4.0 V drive
(4) Low drain-source on-resistance
: RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V)
RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V)
RDS(ON) = 43 mΩ (typ.) (@VGS = 4 V)
Note 1: For detail information, please contact to our sales.
3. Packaging and Pin Assignment
1, 2, 5, 6: Drain
3: Gate
4: Source
UDFN6B
Start of commercial production
2016-12
©2016 Toshiba Corporation
2017-02-01
Rev.3.0
1
SSM6K341NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
VDSS
VGSS
ID
60
±20
6
(Note 1)
(Note 1), (Note 2)
(Note 3)
A
IDP
24
PD
1.28
3.0
W
Power dissipation
(t = 10 s)
(Note 3)
PD
Single-pulse avalanche energy
Avalanche current
(Note 4)
EAS
IAR
28.9
6
mJ
A
Channel temperature
Storage temperature
(Note 5)
(Note 5)
Tch
Tstg
175
-55 to 175
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 175 .
Note 2: pulse width ≤ 1 ms, Duty ≤ 1 %
Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2)
Note 4: VDD = 25 V, Tch = 25 (Initial state), L = 1 mH, RG = 25 Ω
Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
©2016 Toshiba Corporation
2017-02-01
Rev.3.0
2
SSM6K341NU
5. Electrical Characteristics
5.1. Static Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VDS = 0 V, VGS = ±16 V
43
36
28
±10
1
µA
Drain cut-off current
VDS = 60 V, VGS = 0 V
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
60
40
1.5
V
(Note 1) V(BR)DSX ID = 10 mA, VGS = -20 V
(Note 2)
Vth
VDS = 10 V, ID = 0.1 mA
2.5
69
51
36
Drain-source on-resistance
(Note 3) RDS(ON) ID = 2 A, VGS = 4 V
ID = 3 A, VGS = 4.5 V
mΩ
ID = 4 A, VGS = 10 V
Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (0.1 mA for
this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be
lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
tr
VDS = 10 V, VGS = 0 V,
f = 1 MHz
550
35
300
6
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
VDD = 30 V, ID = 3 A,
VGS = 0 to 4.5 V, RG = 50 Ω
Duty ≤ 1 %,Input: tr, tf < 5 ns,
Common source,
ns
ton
18
48
63
tf
See Chapter 5.3.
toff
5.3. Switching Time Test Circuit
Fig. 5.3.1 Switching Time Test Circuit
Fig. 5.3.2 Input Waveform/Output Waveform
5.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
nC
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Qg
Qgs1
Qgd
VDD = 48 V, ID = 2 A,
VGS = 10 V
9.3
1.8
2.0
Gate-drain charge
©2016 Toshiba Corporation
2017-02-01
Rev.3.0
3
SSM6K341NU
5.5. Source-Drain Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Diode forward voltage
Symbol
Test Condition
Min
Typ.
Max
-1.5
Unit
V
(Note 1)
VDSF
ID = -4 A, VGS = 0 V
-0.84
Note 1: Pulse measurement.
6. Marking
7. Internal Circuit
©2016 Toshiba Corporation
2017-02-01
Rev.3.0
4
SSM6K341NU
8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VGS
Fig. 8.3 RDS(ON) - VGS
Fig. 8.4 RDS(ON) - ID
Fig. 8.5 RDS(ON) - Ta
Fig. 8.6 Vth - Ta
©2016 Toshiba Corporation
2017-02-01
Rev.3.0
5
SSM6K341NU
Fig. 8.7 IDR - VDS
Fig. 8.8 C - VDS
Fig. 8.9 t - ID
Fig. 8.10 Dynamic Input Characteristics
Fig. 8.11 Safe Operating Area
Fig. 8.12 rth - tw
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016 Toshiba Corporation
2017-02-01
Rev.3.0
6
SSM6K341NU
Package Dimensions
Unit: mm
Weight: 8.5 mg (typ.)
Package Name(s)
JEDEC: SOT-1220
Nickname: UDFN6B
©2016 Toshiba Corporation
2017-02-01
Rev.3.0
7
SSM6K341NU
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's
written permission, reproduction is permissible only if reproduction is without alteration/omission.
ThoughTOSHIBAworkscontinuallytoimproveProduct'squalityandreliability,Productcanmalfunctionorfail.Customersareresponsible
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDEDUSE").Exceptforspecificapplicationsasexpresslystatedinthisdocument, UnintendedUseincludes, withoutlimitation,
equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles,
trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices,
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representative.
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applicable laws or regulations.
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intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
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INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING
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(mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and
regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration
Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all
applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
©2016 Toshiba Corporation
2017-02-01
Rev.3.0
8
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