SSM6L35FU(TE85L,F) [TOSHIBA]
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,180MA I(D),SOT-363;![SSM6L35FU(TE85L,F)](http://pdffile.icpdf.com/pdf2/p00293/img/icpdf/SSM6L35FU-TE_1774168_icpdf.jpg)
型号: | SSM6L35FU(TE85L,F) |
厂家: | ![]() |
描述: | TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,180MA I(D),SOT-363 |
文件: | 总8页 (文件大小:385K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SSM6L35FU
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L35FU
○ High-Speed Switching Applications
Unit: mm
○ Analog Switch Applications
•
N-ch: 1.2-V drive
P-ch: 1.2-V drive
N-ch, P-ch, 2-in-1
•
•
Low ON-resistance Q1 N-ch: R = 20 Ω (max) (@V
on
= 1.2 V)
= 1.5 V)
= 2.5 V)
= 4.0 V)
GS
: R
: R
: R
=
=
=
8 Ω (max) (@V
on
on
on
GS
GS
GS
4 Ω (max) (@V
3 Ω (max) (@V
Q2 P-ch: R = 44 Ω (max) (@V
on GS
= -1.2 V)
= -1.5 V)
= -2.5 V)
: R = 22 Ω (max) (@V
on
GS
GS
: R = 11 Ω (max) (@V
on
: R
on
=
8 Ω (max) (@V
= -4.0 V)
GS
1.SOURCE 1 4.SOURCE 2
2.GATE 1
5.GATE 2
Q1 Absolute Maximum Ratings (Ta = 25°C)
3.DRAIN 2
6.DRAIN 1
Characteristics
Drain–source voltage
Symbol
Rating
Unit
JEDEC
-
-
V
V
20
V
V
DSS
JEITA
Gate–source voltage
±10
180
360
GSS
TOSHIBA
2-2J1C
DC
I
D
Drain current
mA
Pulse
I
DP
Weight: 6.8 mg (typ.)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain–source voltage
Symbol
Rating
Unit
V
V
-20
±10
V
V
DSS
Gate–source voltage
GSS
DC
I
-100
-200
D
Drain current
mA
Pulse
I
DP
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristics
Symbol
P (Note 1)
Rating
Unit
Drain power dissipation
Channel temperature
200
150
mW
°C
D
T
ch
Storage temperature range
T
-55 to 150
°C
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Start of commercial production
2008-03
1
2015-09-09
SSM6L35FU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= ±10 V, V = 0V
Min
Typ.
Max
Unit
Gate leakage current
I
V
―
20
―
―
―
±10
―
1
μA
V
GSS
GS
DS
Drain–source breakdown voltage
Drain cutoff current
V
I
= 0.1 mA, V
= 0V
= 0V
(BR) DSS
D
GS
GS
I
V
V
V
= 20 V, V
―
μA
V
DSS
DS
DS
DS
Gate threshold voltage
V
= 3 V, I = 1 mA
0.4
115
―
―
1.0
―
3
th
D
Forward transfer admittance
|Y |
fs
= 3 V, I = 50 mA
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
―
mS
D
I
I
I
I
= 50 mA, V
= 4 V
1.5
2
D
D
D
D
GS
GS
= 50 mA, V
= 2.5 V
―
4
Drain–source ON-resistance
R
Ω
DS (ON)
= 5 mA, V
= 5 mA, V
= 1.5 V
= 1.2 V
―
3
8
GS
GS
―
5
20
―
―
―
―
Input capacitance
C
―
9.5
4.1
9.5
115
300
-0.9
iss
rss
oss
on
Reverse transfer capacitance
Output capacitance
C
V
= 3 V, V
= 0V, f = 1 MHz
GS
―
pF
DS
C
t
―
Turn-on time
Switching time
―
V
V
= 3 V, I = 50 mA,
DD
GS
D
ns
V
= 0 to 2.5 V
Turn-off time
t
―
―
―
off
Drain–source forward voltage
V
I
= - 180 mA, V = 0V
GS
(Note 2)
-1.2
DSF
D
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= ±10 V, V = 0 V
Min
Typ.
Max
Unit
Gate leakage current
I
V
―
-20
―
―
―
±10
―
μA
V
GSS
GS
DS
Drain–source breakdown voltage
Drain cutoff current
V
I
= -0.1 mA, V
= 0 V
= 0 V
(BR) DSS
D
GS
GS
I
V
V
V
= -20 V, V
―
-1
μA
V
DSS
DS
DS
DS
Gate threshold voltage
V
= -3 V, I = -1 mA
-0.4
77
―
―
-1.0
―
th
D
Forward transfer admittance
|Y |
fs
= -3 V, I = -50 mA
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
―
mS
D
I
I
I
I
= -50 mA, V
= -4 V
4.3
5.6
8.2
11
8
D
D
D
D
GS
GS
= -50 mA, V
= -2.5 V
―
11
22
44
―
Drain–source ON-resistance
R
Ω
DS (ON)
= -5 mA, V
= -2 mA, V
= -1.5 V
= -1.2 V
―
GS
GS
―
Input capacitance
C
―
12.2
6.5
10.4
175
251
0.83
iss
rss
oss
on
Reverse transfer capacitance
Output capacitance
C
V
= -3 V, V
= 0 V, f = 1 MHz
GS
―
―
pF
DS
C
t
―
―
Turn-on time
Switching time
―
―
V
V
= -3 V, I = -50 mA,
DD
GS
D
ns
V
= 0 to -2.5 V
Turn-off time
t
―
―
―
off
Drain–source forward voltage
V
I
= 100 mA, V
= 0 V
(Note 2)
DSF
D
GS
1.2
Note 2: Pulse test
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
LL3
Q2
1
2
3
1
2
3
2
2015-09-09
SSM6L35FU
Q1 Switching Time Test Circuit
(a) Test Circuit
(b) V
(c) V
IN
2.5 V
0 V
90%
OUT
2.5 V
IN
10%
0
R
L
10 μs
V
DD
V
OUT
DD
10%
90%
V
= 3 V
DD
Duty ≤ 1%
: t , t < 5 ns
(Z = 50 Ω)
out
V
V
IN
r f
DS (ON)
t
t
f
r
Common Source
t
t
off
on
Ta = 25°C
Q2 Switching Time Test Circuit
(a) Test Circuit
(b) V
0 V
IN
10%
OUT
0
IN
90%
-2.5 V
-2.5 V
R
L
V
DS (ON)
90%
10%
(c) V
OUT
10 μs
V
DD
V
= -3 V
DD
V
DD
Duty ≤ 1%
: t , t < 5 ns
t
t
f
r
V
IN
r f
(Z = 50 Ω)
Common Source
out
t
t
off
on
Ta = 25°C
Q1 Usage Considerations
Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the Q1 of
th
D
the SSM6L35FU). Then, for normal switching operation, V
must be higher than V and V must be lower
th, GS(off)
GS(on)
than V This relationship can be expressed as: V
th. GS(off)
< V < V
th GS(on).
Take this into consideration when using the device.
Q2 Usage Considerations
Let V be the voltage applied between gate and source that causes the drain current (I ) to below (-1 mA for the Q2 of
th
D
the SSM6L35FU). Then, for normal switching operation, V
must be higher than V and V must be lower
th, GS(off)
GS(on)
than V This relationship can be expressed as: V
th. GS(off)
< V < V
th GS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
3
2015-09-09
SSM6L35FU
Q1 (N-ch MOSFET)
I
– V
I – V
D GS
D
DS
1000
100
10
400
300
Common Source
Common Source
10 V 4 V
2.5 V
Ta = 25°C
V
DS
= 3 V
1.8 V
1.5 V
Ta = 100°C
200
25°C
-25°C
1
100
0
0.1
V
= 1.2 V
GS
0.01
0
0.5
1
1.5
2
0
1
2
3
Drain–source voltage
V
(V)
Gate–source voltage
V
(V)
DS
GS
R
– V
R
– V
DS (ON)
GS
DS (ON)
GS
10
10
Common Source
= 50 mA
Common Source
= 5 mA
I
I
D
D
5
5
25°C
25°C
Ta = 100°C
-25°C
Ta = 100°C
-25°C
0
0
0
0
2
4
6
8
10
2
4
6
8
10
Gate–source voltage
V
(V)
Gate–source voltage
V
(V)
GS
GS
R
– I
R
– Ta
DS (ON)
D
DS (ON)
10
10
Common Source
Common Source
Ta = 25°C
V
GS
= 1.2 V
V = 1.2 V, I = 5 mA
GS D
5
5
1.5 V
1.5 V, 5 mA
2.5 V
4 V
2.5 V, 50 mA
4 V, 50 mA
0
0
1
0
-50
10
100
1000
50
100
150
Drain current
I
(mA)
Ambient temperature Ta (°C)
D
4
2015-09-09
SSM6L35FU
Q1 (N-ch MOSFET)
|Y | – I
fs
D
V
– Ta
th
1000
1.0
Common Source
500
300
I
V
= 1 mA
= 3 V
D
DS
100
50
30
0.5
10
5
3
Common Source
V
= 3 V
DS
Ta = 25°C
1
0
-50
1
10
100
1000
0
50
100
150
Drain current
I
(mA)
D
Ambient temperature Ta (°C)
I
– V
C – V
DS
DR
DS
1000
100
10
100
50
Common Source
V
GS
= 0 V
D
IDR
G
25°C
S
10
5
C
iss
Ta = 100°C
-25°C
1
C
oss
Common Source
= 0 V
V
GS
0.1
0.01
f = 1 MHz
Ta = 25°C
C
rss
1
0.1
0.5
1
5
10
50 100
0
-0.5
-1
-1.5
Drain–source voltage
V
(V)
Drain–source voltage
V
(V)
DS
DS
t – I
D
5000
3000
Common Source
t
V
V
= 3 V
= 0 to 2.5 V
off
DD
GS
Ta = 25°C
1000
t
f
500
300
100
t
on
50
30
t
r
10
0.1
1
10
100
1000
Drain current
I
(mA)
D
5
2015-09-09
SSM6L35FU
Q2 (P-ch MOSFET)
I
– V
I – V
D GS
D
DS
-250
-1000
-100
Common Source
Common Source
V
DS
= -3V
Ta = 25°C
-4 V
-200
-150
-100
-50
-2.5 V
Ta = 100°C
-10
-1
-1.8 V
-1.5 V
25°C
-25°C
-0.1
V =-1.2 V
GS
0
-0.01
0
-1
-2
-3
0
-1.5
-2
-1
-0.5
Drain–source voltage
V
(V)
Gate–source voltage
V
(V)
DS
GS
R
– V
R
– V
DS (ON)
GS
DS (ON) GS
20
15
10
5
15
10
Common Source
= -5 mA
Common Source
I = -50 mA
D
I
D
25°C
25°C
Ta=100°C
5
Ta=100°C
-25°C
-25°C
0
0
0
-2
-4
-6
-10
0
-2
-4
-6
-10
-8
-8
Gate–source voltage
V
(V)
Gate–source voltage
V
(V)
GS
GS
R
– Ta
R
– I
D
DS (ON)
DS (ON)
20
15
10
5
20
15
10
5
Common Source
Common Source
Ta = 25°C
V
GS
=-1.2 V, ID=-2 mA
-1.5 V, -5 mA
-2.5 V, -50 mA
V
= -1.2 V
GS
-1.5 V
-2.5 V
-4 V, -50 mA
-4 V
0
-1
0
-50
-10
-100
-1000
0
50
100
150
Drain current
I
(mA)
D
Ambient temperature Ta (°C)
6
2015-09-09
SSM6L35FU
Q2 (P-ch MOSFET)
V
– Ta
|Y | – I
fs D
th
-1
1000
100
10
Common Source
= -1 mA
I
D
V
DS
= -3 V
-0.8
-0.6
-0.4
-0.2
0
Common Source
V
= -3 V
DS
Ta = 25°C
1
-1
-10
-100
-1000
−50
0
50
100
150
Ambient temperature Ta (°C)
Drain current
I
(mA)
D
I
– V
C – V
DS
DR
DS
1000
100
10
1
Common Source
= 0 V
V
GS
100
10
D
G
I
DR
S
C
iss
25°C
1
C
oss
Ta=100°C
C
rss
Common Source
= 0 V
0.1
0.01
-25°C
V
GS
f = 1 MHz
Ta = 25°C
-0.1
-1
-10
-100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain–source voltage
V
(V)
Drain–source voltage
V
(V)
DS
DS
t – I
P *– Ta
D
D
10000
1000
100
250
200
Common Source
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm × 6)
2
V
V
= -3 V
DD
= 0 to -2.5 V
GS
Ta = 25°C
t
off
150
100
t
f
t
on
t
r
50
0
10
-0.1
-1
-10
-100
-1000
0
20
40
60
80
100
120
140
160
*:Total Rating
Drain current
I
(mA)
Ambient temperature Ta (°C)
D
7
2015-09-09
SSM6L35FU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
•
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
•
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
8
2015-09-09
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