SSM6L40TU(TE85L,F) [TOSHIBA]
TRANSISTOR TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,1.6A I(D),SOT-363VAR, FET General Purpose Small Signal;
| 型号： | SSM6L40TU(TE85L,F) |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,1.6A I(D),SOT-363VAR, FET General Purpose Small Signal |
| 文件： | 总9页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6L40TU
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L40TU
○Power Management Switch Applications
○High-Speed Switching Applications
Unit: mm
2.1±0.1
•
N-ch: 4.0-V drive
P-ch: 4.0 -V drive
N-ch, P-ch, 2-in-1
1.7±0.1
•
•
Low ON-resistance Q1 N-ch: R = 182 mΩ (max) (@V
= 4 V)
1
2
3
6
5
4
on
GS
GS
GS
GS
R
on
= 122 mΩ (max) (@V
= 10 V)
= -4 V)
= -10 V)
Q2 P-ch: R = 403 mΩ (max) (@V
on
R
on
= 226 mΩ (max) (@V
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
V
30
±20
1.6
3.2
V
V
DSS
Gate-source voltage
GSS
4.Source2
5.Gate2
1.Source1
2.Gate1
DC
I
D
Drain current
A
6.Drain1
3.Drain2
Pulse
I
DP
UF6
Q2 Absolute Maximum Ratings (Ta = 25°C)
JEDEC
JEITA
―
Characteristics
Drain-source voltage
Symbol
Rating
Unit
―
V
V
−30
±20
V
V
DSS
TOSHIBA
2-2T1B
Gate-source voltage
GSS
DC
I
−1.4
−2.8
Weight: 7.0 mg (typ.)
D
Drain current
A
Pulse
I
DP
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
Characteristics
Symbol
P (Note 1)
Rating
Unit
Drain power dissipation
Channel temperature
500
150
mW
°C
D
T
ch
Storage temperature range
T
stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2 )
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
Q2
LL2
1
2
3
1
2
3
1
2008-02-25
SSM6L40TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
V
V
I
I
= 1 mA, V
= 1 mA, V
= 0 V
30
15
⎯
⎯
1.0
1.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-source breakdown voltage
= -20 V
Drain cutoff current
I
V
V
V
V
=30 V, V
= 0 V
⎯
1
μA
μA
V
DSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±16 V, V
= 0 V
⎯
±1
2.6
⎯
GSS
DS
V
= 5 V, I = 1 mA
⎯
th
D
|Y |
fs
= 5 V, I = 1A
(Note 2)
(Note 2)
(Note 2)
3.7
96
S
D
I
I
= 1 A, V
= 10 V
122
182
⎯
D
GS
Drain-source ON-resistance
R
mΩ
DS (ON)
= 0.5 A, V
= 4 V
GS
130
180
34
D
Input capacitance
C
C
iss
V
= 15 V, V
= 0 V, f = 1 MHz
GS
pF
Output capacitance
Reverse transfer capacitance
Total Gate Charge
⎯
DS
oss
C
27
⎯
rss
Qg
5.1
3.9
1.2
9.5
9.0
-0.8
⎯
V
V
= 15 V, I = 1.6 A
D
DS
GS
nC
Gate−Source Charge
Gate−Drain Charge
Qgs
Qgd
⎯
= 10 V
⎯
Turn-on time
Switching time
t
on
t
off
V
V
= 15 V, I = 0.5 A
⎯
DD
GS
D
ns
V
= 0 to 4 V, R = 10 Ω
⎯
Turn-off time
G
Drain-source forward voltage
V
I
= -1.6 A, V = 0 V
GS
(Note 2)
-1.2
DSF
D
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
V
V
I
I
= -1 mA, V
= -1 mA, V
= 0 V
-30
-15
⎯
⎯
⎯
⎯
⎯
(BR) DSS
(BR) DSX
D
D
GS
GS
Drain-source breakdown voltage
= +20 V
Drain cutoff current
I
V
V
V
V
= -30 V, V
= 0 V
= 0 V
⎯
-10
±1
-2.0
⎯
μA
μA
V
DSS
GSS
DS
GS
DS
DS
GS
Gate leakage current
Gate threshold voltage
Forward transfer admittance
I
= ±16 V, V
⎯
⎯
DS
V
= -5 V, I = -1 mA
-0.8
1.0
⎯
⎯
th
D
⏐Y ⏐
= -5 V, I = -1 A
(Note 2)
(Note 2)
(Note 2)
2.0
175
290
120
32
S
fs
D
I
I
= -1.0 A, V
= -0.5 A, V
= -10 V
= -4.0 V
226
403
⎯
D
D
GS
GS
Drain-source ON-resistance
R
mΩ
DS (ON)
⎯
Input capacitance
C
C
⎯
iss
V
= -15 V, V
= 0 V, f = 1 MHz
GS
pF
Output capacitance
Reverse transfer capacitance
Total Gate Charge
⎯
⎯
DS
oss
C
⎯
21
⎯
rss
Qg
⎯
2.9
2.2
0.7
12
⎯
V
V
= -15 V, I = -1.4 A
D
DS
GS
nC
Gate−Source Charge
Gate−Drain Charge
Qgs
Qgd
⎯
⎯
= -10 V
⎯
⎯
Turn-on time
Switching time
t
t
V
V
= -15 V, I = -1 A,
⎯
⎯
on
off
DD
GS
D
ns
V
= 0 to -4 V, R = 10 Ω
⎯
⎯
Turn-off time
8.5
0.87
G
Drain-source forward voltage
Note 2: Pulse test
V
I
= 1.4 A, V = 0 V
GS
(Note 2)
⎯
1.2
DSF
D
2
2008-02-25
SSM6L40TU
Q1 Switching Time Test Circuit
(a) Test Circuit
(b) V
(c) V
IN
4.0 V
0 V
90%
OUT
4.0 V
0
IN
10%
V
DD
OUT
10 μs
= 15 V
10%
90%
V
DD
V
R
DD
V
DS (ON)
= 10 Ω
t
f
t
r
G
D.U. ≤ 1%
: t , t < 5 ns
t
t
off
on
V
IN
r f
Common Source
Ta = 25°C
Q2 Switching Time Test Circuit
(a) Test Circuit
(b) V
(c) V
IN
0 V
10%
OUT
0
IN
90%
−4.0 V
−4.0V
R
L
V
DS (ON)
90%
10%
OUT
10 μs
V
DD
V
=− 15 V
= 10 Ω
DD
V
DD
R
G
t
t
f
r
D.U. ≤ 1%
: t , t < 5 ns
Common Source
V
IN
r f
t
t
off
on
Ta = 25°C
Q1 Usage Considerations
Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the Q1 of
th
D
the SSM6L40TU). Then, for normal switching operation, V
must be higher than V and V
must be lower
GS(off)
GS(on)
th,
than V This relationship can be expressed as: V
< V < V
th GS(on).
th.
GS(off)
Take this into consideration when using the device.
Q2 Usage Considerations
Let V be the voltage applied between gate and source that causes the drain current (I ) to below (−1 mA for the Q2
th
D
of the SSM6L40TU). Then, for normal switching operation, V
must be higher than V and V
th,
must be lower
GS(off)
GS(on)
than V This relationship can be expressed as: V
< V < V
th GS(on).
th.
GS(off)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
3
2008-02-25
SSM6L40TU
Q1 (N-ch MOSFET)
I
– V
I – V
D GS
D
DS
4
10
1
Common Source
Ta = 25 °C
Common Source
= 5 V
V
DS
10 V 5.0 V
3.5 V
4.0 V
3
2
1
3.0 V
0.1
3.3 V
Ta = 100 °C
25 °C
0.01
VGS = 2.5 V
− 25 °C
0.001
0
0.0001
0
0.2
0.4
0.6
0.8
1.0
0
2.0
4.0
Drain-source voltage
V
(V)
DS
Gate-source voltage
V
(V)
GS
R
– V
GS
R
– I
D
DS (ON)
DS (ON)
400
300
200
400
Common Source
I
=1.0A
D
Ta = 25°C
Common Source
300
200
25 °C
4.0 V
Ta = 100 °C
− 25 °C
100
0
100
0
VGS = 10V
2
0
10
20
0
1
3
4
Gate-source voltage
V
(V)
GS
Drain current
I
(A)
D
R
– Ta
V
– Ta
th
DS (ON)
400
2.0
1.0
0
Common Source
= 5 V
Common Source
V
DS
I
= 1 mA
D
300
200
I
= 0.5 A / V
= 4.0 V
GS
D
1.0 A / 10 V
100
0
−50
0
50
100
150
−50
0
50
100
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
4
2008-02-25
SSM6L40TU
Q1 (N-ch MOSFET)
I
– V
DS
DR
|Y | – I
fs
D
10
10
1
Common Source
V
= 5 V
DS
Ta = 25°C
3
1
25 °C
0.1
Common Source
Ta =100 °C
V
= 0 V
GS
D
0.3
0.01
I
G
DR
−25 °C
S
0.001
0.1
0.01
1
0.1
10
0
–0.5
–1.0
–1.5
Drain current
I
(A)
Drain-source voltage
V
(V)
D
DS
C – V
t – I
D
DS
1000
100
1000
Common Source
V
V
= 15 V
500
300
DD
GS
= 0 to 4.0 V
t
Ta = 25 °C
off
C
iss
R
G
= 10 Ω
t
f
100
50
30
C
oss
C
rss
10
10
t
on
Common Source
Ta = 25°C
5
3
f = 1 MHz
t
r
V
= 0 V
GS
1
0.1
1
0.01
1
10
100
0.1
1
10
Drain-source voltage
V
(V)
Drain current
I
(A)
DS
D
Dynamic Input Characteristic
10
8
Common Source
= 1.6A
I
D
Ta = 25°C
6
V
= 15 V
V
= 24 V
DD
DD
4
2
0
0
1
2
3
4
5
6
Total Gate Charge Qg (nC)
5
2008-02-25
SSM6L40TU
Q2 (P-ch MOSFET)
I
– V
I – V
D GS
D
DS
-3
-2
-1
-10
-1
Common Source
Ta = 25 °C
-10 V
-5.0 V
Common Source
= -5 V
-4.0 V
-3.5 V
V
DS
-0.1
-3.3 V
-3.0 V
Ta = 100 °C
-0.01
25 °C
-2.8 V
− 25 °C
-0.001
VGS =- 2.5V
0
-0.0001
0
-0.2
-0.4
-0.6
-0.8
-1.0
0
-1.0
-2.0
-3.0
-4.0
Drain-source voltage
V
(V)
DS
Gate-source voltage
V
(V)
GS
R
– V
GS
R
– I
D
DS (ON)
DS (ON)
1000
800
1000
800
Common Source
I
=−1.0A
D
Ta = 25°C
Common Source
600
600
400
200
0
400
25 °C
Ta = 100 °C
− 25 °C
-4.0 V
200
0
VGS = -10 V
-2
0
-10
-20
0
-1
-3
Gate-source voltage
V
(V)
GS
Drain current
I
(A)
D
R
– Ta
V
– Ta
th
DS (ON)
1000
800
-2.0
-1.0
0
Common Source
= -5.0 V
Common Source
V
DS
= -1 mA
I
D
600
I
= -0.5 A / V
= -4.0 V
D
GS
-1.0 A / -10 V
400
200
0
−50
0
50
100
150
−50
0
50
100
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
6
2008-02-25
SSM6L40TU
Q2 (P-ch MOSFET)
I
– V
DS
DR
|Y | – I
fs
D
10
10
1
Common Source
Common Source
V
= 0 V
GS
V
= -5.0 V
DS
D
Ta = 25°C
3
1
I
G
DR
S
25 °C
0.1
Ta =100 °C
0.3
0.01
−25 °C
0.001
0.1
-0.01
-1
-0.1
-10
0
0.5
1.0
1.5
Drain current
I
(A)
Drain-source voltage
V
(V)
D
DS
C – V
t – I
D
DS
1000
100
1000
Common Source
V
V
= -15 V
500
300
DD
GS
= 0 to -4.0 V
Ta = 25 °C
= 10 Ω
t
off
R
G
C
iss
100
t
f
50
30
C
oss
C
rss
t
on
10
10
Common Source
Ta = 25°C
5
3
t
r
f = 1 MHz
V
= 0 V
GS
1
-0.1
1
-0.01
-1
-10
-100
-0.1
-1
-10
Drain-source voltage
V
(V)
Drain current
I
(A)
DS
D
Dynamic Input Characteristic
-10
-8
Common Source
= -1.4 A
I
D
Ta = 25°C
-6
VDD = -15 V
VDD = -24 V
-4
-2
0
0
1
2
3
4
5
Total Gate Charge Qg (nC)
7
2008-02-25
SSM6L40TU
Q1, Q2 Common
r
th
– t
w
P * – T
D
a
1000
1000
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
800
600
400
t=10s
DC
100
10
1
200
0
-40 -20
0
20
40
60 80 100 120 140 160
0.001
0.01
0.1
1
10
100
1000
*:Total Rating Ambient temperature Ta (°C)
Pulse width
t
(s)
w
8
2008-02-25
SSM6L40TU
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
9
2008-02-25
相关型号：
©2020 ICPDF网 联系我们和版权申明