SSM6N03FE_07 [TOSHIBA]
High Speed Switching Applications; 高速开关应用
| 型号： | SSM6N03FE_07 |
| 厂家： | 
TOSHIBA |
| 描述： | High Speed Switching Applications |
| 文件： | 总5页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6N03FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N03FE
High Speed Switching Applications
Unit: mm
Analog Switch Applications
•
•
Input impedance is high. Driving current is extremely low.
Can be directly driven by a CMOS device even at low voltage due to
low gate threshold voltage.
•
•
High-speed switching.
Housed in a ultra-small package which is suitable for high density
mounting.
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
20
10
V
V
DS
Gate-source voltage
Drain current
V
D
GSS
I
100
mA
mW
°C
D
Drain power dissipation
Channel temperature
Storage temperature
P
(Note 1)
150
T
ch
150
JEDEC
JEITA
―
―
T
stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
Weight:
2-2N1D
g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6)
0.3 mm
Equivalent Circuit (top view)
Marking
6 PIN
5 PIN
4 PIN
6 PIN
5 PIN
4 PIN
D A
Q1
1 PIN
Q2
2 PIN
3 PIN
1 PIN
2 PIN
3 PIN
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SSM6N03FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= 10 V, V = 0 V
DS
⎯
20
⎯
0.7
25
⎯
⎯
⎯
⎯
⎯
⎯
1
⎯
1
μA
V
GSS
GS
Drain-source breakdown voltage
Drain cut-off current
V
I
= 100 μA, V
= 0 V
= 0 V
(BR) DSS
D
GS
GS
I
V
V
V
= 20 V, V
⎯
μA
V
DSS
DS
DS
DS
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
V
= 3 V, I = 0.1 mA
⎯
1.3
⎯
12
⎯
⎯
⎯
th
D
|Y |
fs
= 3 V, I = 10 mA
60
4
mS
Ω
D
R
I
= 10 mA, V
= 2.5 V
GS
DS (ON)
D
C
V
V
V
= 3 V, V
= 3 V, V
= 3 V, V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
11.0
3.3
9.3
pF
pF
pF
iss
rss
oss
DS
DS
DS
GS
GS
GS
Reverse transfer capacitance
Output capacitance
C
C
t
V
V
= 3 V, I = 10 mA,
DD
GS
D
Turn-on time
Switching time
⎯
⎯
0.16
0.19
⎯
⎯
on
off
= 0~2.5 V
μs
V
V
= 3 V, I = 10 mA,
DD
GS
D
Turn-off time
t
= 0~2.5 V
Switching Time Test Circuit
(a) Test circuit
2.5 V
0
V
= 3 V
90%
DD
I
(b) V
(c) V
D
IN
2.5 V
0
Output
<
D.U. 1%
V
Input
GS
Input: t , t < 5 ns
(Z
out
Common Source
10%
r
f
= 50 Ω)
V
DD
R
L
10 μs
10%
OUT
Ta = 25°C
V
IN
V
90%
DS
V
DD
V
DS (ON)
t
t
f
r
t
t
off
on
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I = 100 μA for this
D
product. For normal switching operation, V
requires higher voltage than V and V
requires lower
GS (on)
th
GS (off)
voltage than V . (Relationship can be established as follows: V
th
< V < V
)
GS (off)
th
GS (on)
Please take this into consideration for using the device.
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2007-11-01
SSM6N03FE
(Q1, Q2 Common)
I
– V
I
– V (Low voltage region)
D
DS
D
DS
100
100
80
2.5
2.0
2.0
4.0
2.5
2.2
Common Source
Ta = 25°C
80
1.9
Common Source
Ta = 25°C
60
40
60
40
20
0
1.8
1.8
1.6
1.7
1.6
20
0
V
= 1.4 V
GS
V
= 1.4 V
GS
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
– V
I – V
D GS
DR
DS
100
1000
100
10
Common Source
= 0
Common Source
V
GS
Ta = 25°C
V
= 3 V
DS
D
10
1
G
I
DR
Ta = 100°C
1
0.1
25°C
S
−25°C
0.1
0.01
0.01
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
0
0.5
1
1.5
2
2.5
3
0
Drain-source voltage
V
DS
(V)
Gate-source voltage
V
GS
(V)
⎪Y ⎪ – I
fs
D
300
100
C – V
DS
Common Source
100
V
= 3 V
DS
Common Source
= 0
Ta = 25°C
V
GS
50
30
f = 1 MHz
Ta = 25°C
50
30
C
iss
10
C
oss
5
3
10
5
C
rss
1
0.1
1
3
5
10
30
50
100
0.3
1
3
10
30
Drain current
I
(mA)
Drain-source voltage
V
DS
(V)
D
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2007-11-01
SSM6N03FE
(Q1, Q2 Common)
R
– I
t – I
D
DS (ON)
D
10
10000
Common Source
Common Source
V
V
= 3 V
DD
GS
5000
3000
Ta = 25°C
= 0~2.5 V
8
Ta = 25°C
t
off
1000
6
4
2
0
t
f
500
300
2.5
t
on
100
V
= 4 V
GS
t
r
50
30
0.1
0.3
1
3
10
30
100
0
20
40
60
80
100
Drain current
I
(mA)
D
Drain current
I
(mA)
D
R
– Ta
P * – Ta
D
DS (ON)
10
250
200
150
100
50
Common Source
Mounted on FR4 board.
I
= 10 mA
D
(25.4 mm × 25.4 mm × 1.6 t
2
8
6
4
2
Cu Pad: 0.135 mm × 6)
2.5
V
= 4 V
GS
0
−25
0
0
0
25
50
75
100
125
150
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
*: Total rating
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2007-11-01
SSM6N03FE
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01
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