TA6009FNG [TOSHIBA]

Shock Sensor IC (1 ch version); 震动传感器IC ( 1 CH版)
TA6009FNG
型号: TA6009FNG
厂家: TOSHIBA    TOSHIBA
描述:

Shock Sensor IC (1 ch version)
震动传感器IC ( 1 CH版)

模拟IC 传感器 信号电路
文件: 总11页 (文件大小:233K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TA6009FN/FNG  
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic  
TA6009FN,TA6009FNG  
Shock Sensor IC (1 ch version)  
TA6009FN/FNG detects an existence of external shock through  
the shock sensor and output.  
Features  
TA6009FN/FNG operates from 2.7 to 5.5 V DC single power  
supply voltage.  
Signal from the shock sensor is amplified according to setting  
gain, and is detected through the internal window  
comparator.  
TA6009FN/FNG incorporates 1-ch shock detecting circuitry.  
Input terminal of sensor signal is designed high impedance.  
Differential input impedance = 100 M(typ.)  
LPF (low pass filter) circuitry is incorporated.  
Cut-off frequency of LPF = 7 kHz  
Weight: 0.04 g (typ.)  
Sensitivity of shock detection can be adjusted by external devices.  
Small package  
SSOP10-P-0.65A (0.65 mm pitch)  
Block Diagram  
Pin Connection (top view)  
SIA  
SIB  
1
2
3
4
5
10 W-CONT  
10  
9
8
7
9
8
7
6
DO  
AI  
GUARD  
OUT  
A
+
BUFFER  
50 MΩ  
OP-AMP  
1
6
DIFF&LPF  
×10 7 kHz  
AO  
V
CC  
GND  
V
CC  
B
+
Comparator  
Comparator  
BUFFER  
50 MΩ  
R 1.7 V (1.7 V)  
E 1.4 V (1.2 V)  
F 1.1 V (0.7 V)  
2
5
GND  
+
(
) = 10 pin GND  
GUARD  
0.57 V  
3
4
GUARD  
1
2003-12-03  
TA6009FN/FNG  
Pin Function  
Pin No.  
Pin Name  
Function  
Connection terminal of shock sensor  
1
2
SIA  
SIB  
Connection terminal of shock sensor  
Input (1, 2 pin) GUARD terminal  
Output terminal (output = “L” when shock is detected.)  
Ground terminal  
3
GUARD  
OUT  
4
5
GND  
6
V
Power supply voltage  
CC  
7
AO  
AI  
Op-Amp output terminal  
8
Op-Amp input terminal  
9
DO  
Differential-Amp output terminal  
WindComp. trip voltage selection terminal  
10  
W-CONT  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Power supply voltage  
Power dissipation  
V
7
V
CC  
P
300  
mW  
°C  
D
Storage temperature  
T
55 to 150  
stg  
Recommend Operating Condition  
Characteristics  
Symbol  
Rating  
Unit  
Power supply voltage  
Operating temperature  
V
2.7 to 5.5  
V
CC  
T
opr  
25 to 85  
°C  
2
2003-12-03  
TA6009FN/FNG  
Electrical Characteristics (unless otherwise specified, V = 3.3 V, Ta = 25°C)  
CC  
Test  
Circuit  
Characteristics  
Supply voltage  
Symbol  
Test Condition  
Min  
2.7  
Typ.  
Max  
Unit  
V
V
3.3  
1.8  
1.8  
5.5  
2.4  
2.4  
CC  
V
V
= 3.3 V  
CC  
CC  
Supply current  
I
(1)  
mA  
CC  
= 5.0 V  
(GUARD)  
Test  
Circuit  
Characteristics  
Symbol  
VoGur  
Test Condition  
Min  
Typ.  
0.57  
Max  
0.62  
Unit  
V
Output voltage  
(2)  
0.52  
(DIFF-AMP)  
Test  
Circuit  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Input impedance  
Gain  
(Note 1)  
Zin  
50  
100  
20  
MΩ  
GvBuf  
(3)  
19.6  
20.4  
1.3  
10  
dB  
Connect C = 100 pF between  
1 pin and 2 pin  
Output DC voltage  
VoBuf  
(4)  
0.7  
1
V
Low pass filter cut-off freq.  
Output source current  
Output sink current  
fc  
(5) Frequency at 3dB point  
(6) Voh = V 1 V  
5
7
kHz  
µA  
IBso  
IBsi  
400  
75  
800  
130  
CC  
(7) Vol = 0.3 V  
µA  
Note 1: Marked parameters are reference data.  
(OP-AMP)  
Test  
Circuit  
Characteristics  
Cut-off frequency  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
(Note 1)  
(Note 1)  
fT  
1.5  
80  
2
MHz  
dB  
V
Openloop gain  
Input voltage 1  
Input voltage 2  
Input current  
Gvo  
Vin1  
Vin2  
90  
(8) 10 pin OPEN  
(Note 2) 1.33  
(Note 2) 1.14  
1.4  
1.2  
25  
1.47  
1.26  
50  
(9) 10 pin GND  
V
I
(10)  
nA  
mV  
µA  
µA  
in  
Offset voltage  
(Note 1)  
Voff  
IAso  
IAsi  
5  
0
5
Output source current  
Output sink current  
(11) Voh = V  
1 V  
300  
130  
800  
200  
CC  
(12) Vol = 0.3 V  
Note 1: Marked parameters are reference data.  
Note 2: 10 pin must be non-connected otherwise connected to GND.  
(window-comparator)  
Test  
Circuit  
Characteristics  
Trip voltage 1  
Symbol  
Vtrp1  
Test Condition  
10 pin OPEN  
10 pin GND  
0.5 V  
Min  
Typ.  
Vin1  
Max  
Vin1  
Unit  
V
Vin1  
(Note 1)  
(Note 1)  
(Note 2)  
±0.285 ±0.3 ±0.315  
Vin2 Vin2 Vin2  
±0.475 ±0.5 ±0.525  
Trip voltage 2  
Vtrp2  
(Note 2)  
V
Output source current  
Output sink current  
IWso  
IWsi  
(13) Voh = V  
30  
50  
µA  
µA  
CC  
(14) Vol = 0.3 V  
300  
800  
Note 1: Marked parameters are reference data.  
Note 2: 10 pin must be non-connected otherwise connected to GND.  
3
2003-12-03  
TA6009FN/FNG  
Application Note  
1.7 V (1.7 V)  
Buffer  
×1  
C
R
2
2
1
AMP  
×10  
C
1
R
1
7
Shock  
sensor  
LPF  
9
8
Window  
Comparator  
OUT  
4
2
Buffer  
×1  
1.4 V (1.2 V) REF  
1.1 V (0.7 V)  
Figure 1 The Composition of G-Force Sense Amplifier  
Figure 1 is the composition of G-Force sense amplifier.  
The shock sensor is connected between 1 and 2 terminal.  
When G-force Sensor (sensor sensibility = s (mV/G)) is used to detect external shock of g (G), the external  
parts are determined as following.  
(gain setting) * 10 PIN GND  
500/(s × g) = G1  
G1/10 = G (OP-AMP)  
(HPF setting)  
fc = 1/(2 π × R × C )  
1
1
(LPF setting)  
fc = 1/(2 π × R × C )  
2
2
4
2003-12-03  
TA6009FN/FNG  
Reference Data  
(1) 9 pin (DIFF-AMP output) CMRR, PSRR  
CMRR, PSRR (9 pin)  
30  
40  
50  
60  
70  
80  
CMRR  
PSRR  
100  
1000  
10000  
100000  
(Hz)  
(2) 7 pin (OP-AMP output) source current  
Source Current (7 pin)  
1800  
85°C  
1500  
1200  
900  
600  
25°C  
25°C  
300  
0
1.8  
2.0  
2.2  
2.4  
2.6  
Voh (V)  
(3) 7 pin (OP-AMP output) sink current  
Sink Current (7 pin)  
300  
85°C  
250  
200  
25°C  
25°C  
150  
100  
50  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
Vol (V)  
5
2003-12-03  
TA6009FN/FNG  
Equivalent Circuit  
9
7
3
100 Ω  
8
7
VREF  
10 kΩ  
AMP  
4
10  
6
2003-12-03  
TA6009FN/FNG  
Test Circuit  
(1) Supply current I  
(2) GUARD  
Output voltage VoGur  
CC  
M
10  
9
2
8
3
7
4
6
5
10  
1
9
2
8
7
4
6
5
1
3
M
(3) DIFF-AMP  
Gain GvBuf  
Step 1  
Step 2  
M1  
M
M2  
M
10  
1
9
2
8
3
7
4
6
5
10  
9
8
3
7
4
6
5
1
2
Μ2 Μ1  
Gain =  
0.68 0.60  
(4) DIFF-AMP  
(5) DIFF-AMP  
Output DC voltage VoBuf  
Low pass filter cut-off freq. fc  
M
M
10  
1
9
2
8
3
7
4
6
5
10  
1
9
2
8
3
7
4
6
5
0.1 µF  
7
2003-12-03  
TA6009FN/FNG  
(6) DIFF-AMP  
Output source current IBso  
(7) DIFF-AMP  
Output sink current IBsi  
M
M
10  
9
2
8
3
7
4
6
5
10  
9
2
8
3
7
4
6
5
1
1
(8) OP-AMP  
(9) OP-AMP  
Input voltage 1 Vin1  
Input voltage 2 Vin2  
M
M
10  
1
9
2
8
3
7
4
6
5
10  
1
9
2
8
3
7
4
6
5
(10) OP-AMP  
Input current Iin  
M
10  
1
9
2
8
3
7
4
6
5
(11) OP-AMP  
(12) OP-AMP  
Output source current IAso  
Output sink current IAsi  
M
M
10  
1
9
2
8
3
7
4
6
5
10  
1
9
2
8
3
7
4
6
5
8
2003-12-03  
TA6009FN/FNG  
(13) Window comparator  
(14) Window comparator  
Output sink current IWsi  
Output source current IWso  
10  
1
9
2
8
3
7
6
5
10  
1
9
2
8
3
7
6
5
4
4
M
M
Test Circuit (for reference)  
(a) DIFF-AMP  
CMRR  
(b) DIFF-AMP  
PSRR  
M
M
10  
1
9
2
8
3
7
4
6
5
10  
9
2
8
3
7
4
6
5
1
9
2003-12-03  
TA6009FN/FNG  
Package Dimensions  
Weight: 0.04 g (typ.)  
10  
2003-12-03  
TA6009FN/FNG  
RESTRICTIONS ON PRODUCT USE  
030619EAA  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
11  
2003-12-03  

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