TIM1011-10 [TOSHIBA]
TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power;
| 型号： | TIM1011-10 |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power 局域网 放大器 CD 晶体管 |
| 文件： | 总4页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1011-10L
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION HIGH GAIN
IM3=-45 dBc at Pout= 29.0dBm
HIGH POWER
G1dB=6.0 dB at 10.7 GHz to 11.7GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
P1dB=40.5dBm at 10.7GHz to 11.7GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
°
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
P1dB
dBm 40.0 40.5
⎯
G1dB
dB
5.0
6.0
⎯
VDS= 9V
f= 10.7 to 11.7GHz
IDS1
ΔG
ηadd
IM3
A
dB
%
4.0
⎯
23
5.0
±0.8
⎯
⎯
⎯
⎯
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
dBc
-42
-45
⎯
Two-Tone Test
Po=29.0 dBm
Drain Current
IDS2
A
4.0
5.0
90
⎯
⎯
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
C
°
Channel Temperature Rise
ΔTch
⎯
Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
°
CHARACTERISTICS
SYMBOL
CONDITIONS
VDS= 3V
UNIT MIN. TYP. MAX.
Transconductance
gm
mS
3000
-3.5
10.0
⎯
⎯
-1.5
⎯
⎯
-5.0
⎯
IDS= 4.8A
VDS= 3V
IDS= 145mA
VDS= 3V
Pinch-off Voltage
VGSoff
IDSS
V
Saturated Drain Current
A
VGS= 0V
Gate-Source Breakdown
Voltage
VGSO
Rth(c-c)
IGS= -145μA
V
-5
⎯
C/W
°
Thermal Resistance
Channel to Case
2.0
2.5
⎯
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. May 2007
TIM1011-10L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
°
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
VDS
VGS
IDS
UNIT
V
RATING
15
-5
Gate-Source Voltage
Drain Current
V
A
11.5
Total Power Dissipation (Tc= 25 C)
PT
W
60
°
C
Channel Temperature
Storage Temperature
Tch
175
°
C
°
Tstg
-65 to +175
PACKAGE OUTLINE (2-11C1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM1011-10L
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=9V
42
41
40
39
38
IDS≅4.0A
Pin=34.5 dBm
10.7
11.2
11.7
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
44
43
42
41
40
39
38
37
36
35
freq.=11.7GHz
VDS=9V
50
40
30
20
10
IDS≅4.0A
27
29
31
33
35
37
Pin(dBm)
3
TIM1011-10L
Power Dissipation(PT) vs. Case Temperature(Tc)
60
30
0
0
40
80
120
160
200
Tc( C )
°
IM3 vs. Output Power Characteristics
-10
-20
-30
-40
-50
-60
VDS=9V
freq.=11.7GHz
Δf=5MHz
24
26
28
Pout(dBm) @Single carrier level
30
32
34
4
相关型号：
TIM1011-2UL
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power
TOSHIBA
TIM1011-8UL
TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power
TOSHIBA
©2020 ICPDF网 联系我们和版权申明