TIM1213-8 [TOSHIBA]

TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11C1B, 3 PIN, FET RF Power;


型号：	TIM1213-8
厂家：	TOSHIBA
描述：	TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11C1B, 3 PIN, FET RF Power 局域网 CD
文件：	总4页 (文件大小：130K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM1213-8L

TECHNICAL DATA

FEATURES

LOW INTERMODULATION DISTORTION

IM3=-45 dBc at Pout= 28.0dBm

Single Carrier Level

HIGH GAIN

G1dB=5.0 dB at 12.7 GHz to 13.2 GHz

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

HIGH POWER

P1dB=39.5 dBm at 12.7 GHz to 13.2 GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 38.5 39.5

⎯

G1dB

VDS= 9V

f= 12.7 to 13.2GHz

4.0

5.0

⎯

IDS1

η_add

IM3

3.4

4.4

⎯

Power Added Efficiency

3^rdOrder Intermodulation

Distortion

dBc

-42

-45

⎯

Two-Tone Test

Po=28. 0dBm

Drain Current

IDS2

3.4

4.4

⎯

(Single Carrier Level)

(VDS X IDS + Pin – P1dB)

X Rth(c-c)

Channel Temperature Rise

ΔTch

⎯

Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)

ELECTRICAL CHARACTERISTICS ( Ta= 25°C )

CHARACTERISTICS

SYMBOL

CONDITIONS

VDS= 3V

UNIT MIN. TYP. MAX.

Transconductance

2400

-3.5

8.0

⎯

-2.0

⎯

-5.0

⎯

IDS= 4.0 A

VDS= 3V

IDS= 120mA

VDS= 3V

Pinch-off Voltage

VGSoff

IDSS

Saturated Drain Current

VGS= 0V

Gate-Source Breakdown

Voltage

VGSO

Rth(c-c)

IGS= -120μA

-5

⎯

C/W

Thermal Resistance

Channel to Case

1.6

2.5

⎯

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. May 2007

TIM1213-8L

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )

CHARACTERISTICS

Drain-Source Voltage

SYMBOL

VDS

VGS

IDS

UNIT

RATING

-5

Gate-Source Voltage

Drain Current

10.4

Total Power Dissipation (Tc= 25 C)

Channel Temperature

Storage Temperature

Tch

175

Tstg

-65 to +175

PACKAGE OUTLINE (2-11C1B)

Unit in mm

(1) Gate

(2) Source

(3) Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL

Soldering iron should be grounded and the operating time should not exceed 10 seconds

at 260°C.

TIM1213-8L

RF PERFORMANCE

Output Power (Pout) vs. Frequency

VDS=9V

IDS≅3.4A

Pin=34.5 dBm

12.7

12.95

13.2

Frequency(GHz)

Output Power(Pout) vs. Input Power(Pin)

freq.=13.2GHz

VDS=9V

IDS≅3.4A

Pout

ηadd

Pin(dBm)

TIM1213-8L

Power Dissipation(PT) vs. Case Temperature(Tc)

120

160

200

Tc( C )

IM3 vs. Output Power Characteristics

-10

-20

-30

-40

-50

-60

VDS=9V

freq.=13.2GHz

Δf=5MHz

Pout(dBm) @Single carrier level

相关型号：

TIM1213-8L

TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power