TIM6472-12UL [TOSHIBA]
MICROWAVE POWER GaAs FET; 微波功率GaAs FET
| 型号： | TIM6472-12UL |
| 厂家： | 
TOSHIBA |
| 描述： | MICROWAVE POWER GaAs FET |
| 文件： | 总4页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
TIM6472-12UL
FEATURES
ꢀ HIGH POWER
P1dB=41.5dBm at 6.4GHz to 7.2GHz
ꢀ HIGH GAIN
ꢀBROAD BAND INTERNALLY MATCHED
ꢀHERMETICALLY SEALED PACKAGE
G1dB=9.5dB at 6.4GHz to 7.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
SYMBOL
P1dB
CONDITION
UNIT MIN. TYP. MAX.
dBm 40.5 41.5
VDS= 10V
G1dB
dB
8.5
9.5
3.2
f = 6.4 – 7.2GHz
IDS1
∆G
A
dB
%
3.8
Gain Flatness
±0.6
Power Added Efficiency
3rd Order Intermodulation
Distortion
ηadd
IM3
39
Two Tone Test
Po=30.5dBm
dBc
-44
-47
(Single Carrier Level)
Drain Current
IDS2
A
3.2
3.8
80
Channel Temperature Rise
∆Tch
VDS X IDS X Rth(c-c)
°C
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITION
VDS= 3V
IDS= 4.0A
UNIT MIN. TYP. MAX.
mS
2500
-2.5
7.2
Pinch-off Voltage
VGSoff VDS= 3V
IDS= 40mA
IDSS
V
-1.0
-5
-4.0
Saturated Drain Current
VDS= 3V
VGS= 0V
A
10.0
Gate-Source Breakdown
Voltage
VGSO IGS= -140µA
V
Thermal Resistance
Rth(c-c) Channel to Case
°C/W
2.0
2.4
ꢁThe information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Apr. 2000
TIM6472-12UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
VDS
VGS
IDS
UNIT
V
RATING
15
Gate-Source Voltage
Drain Current
V
-5
A
10.0
Total Power Dissipation (Tc= 25 °C )
Channel Temperature
Storage
PT
W
62.5
Tch
°C
°C
175
Tstg
-65 +175
PACKAGE OUTLINE (2-16G1B)
0.7±0.15
Unit in mm
4 – C1.0
ꢂGate
ꢂ
ꢃSource
ꢄDrain
ꢃ
ꢃ
ꢄ
20.4±0.3
24.5 MAX.
16.4 MAX.
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°C.
2
TIM6472-12UL
RF PERFORMANCES
Output Power vs. Frequency
44
VDS= 10V
IDS 3.2A
Pin= 32.0dBm
43
42
41
40
39
6
6.2
6.4
6.6
6.8
7
7.2
7.4
7.6
Frequency (GHz)
Output Power vs. Input Power
43
90
f= 6.8GHz
VDS= 10V
IDS 3.2A
42
41
40
39
38
37
36
35
34
80
70
60
50
40
30
20
10
0
Po
ηadd
24
26
28
30
32
34
Pin (dBm)
3
TIM6472-12UL
POWER DISSIPATION vs. CASE TEMPERATURE
100
80
60
40
20
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. OUTPUT POWER CHARACTERISTICS
-20
-30
-40
-50
-60
VDS= 10V
IDS 3.2A
f= 6.8GHz
∆f= 5MHz
25
27
29
31
33
35
Po(dBm), Single Carrier Level
4
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