TIM6472-16UL [TOSHIBA]
HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz; 大功率的P1dB = 42.5dBm ，在6.4GHz到7.2GHz
| 型号： | TIM6472-16UL |
| 厂家： | 
TOSHIBA |
| 描述： | HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz |
| 文件： | 总4页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM6472-16UL
TECHNICAL DATA
FEATURES
HIGH POWER
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
P1dB=42.5dBm at 6.4GHz to 7.2GHz
HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
°
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
P1dB
dBm 41.5 42.5
⎯
G1dB
VDS= 10V
IDSset=3.6A
dB
8.5
9.5
⎯
f = 6.4 to 7.2GHz
IDS1
ΔG
A
dB
%
4.4
⎯
5.0
±0.6
⎯
⎯
⎯
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
ηadd
IM3
36
⎯
Two-Tone Test
Po= 31.5dBm
dBc
-44
-47
⎯
(Single Carrier Level)
Drain Current
IDS2
A
4.4
5.0
80
⎯
⎯
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
C
°
Channel Temperature Rise
ΔTch
⎯
Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
°
CHARACTERISTICS
SYMBOL
CONDITIONS
VDS= 3V
IDS= 6.0A
UNIT MIN. TYP. MAX.
Transconductance
gm
mS
3600
-2.5
10.5
⎯
⎯
-1.0
⎯
⎯
-4.0
⎯
Pinch-off Voltage
VGSoff VDS= 3V
IDS= 60mA
V
Saturated Drain Current
IDSS
VDS= 3V
VGS= 0V
A
IGS= -200 A
Gate-Source Breakdown
Voltage
VGSO
V
-5
μ
⎯
C/W
°
Thermal Resistance
Rth(c-c) Channel to Case
1.5
1.8
⎯
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2009
TIM6472-16UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
°
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
VDS
VGS
IDS
UNIT
V
RATING
15
-5
Gate-Source Voltage
Drain Current
V
A
14
Total Power Dissipation (Tc= 25 C )
PT
W
83.3
°
C
Channel Temperature
Storage
Tch
175
°
C
°
Tstg
-65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM6472-16UL
RF PERFORMANCE
Output Power vs. Frequency
45
VDS= 10V
IDS≅ 4.4A
44
Pin= 33.0dBm
43
42
41
40
6
6.2
6.4
6.6
6.8
7
7.2
7.4
7.6
Frequency (GHz)
Output Power vs. Input Power
45
44
43
42
41
40
39
38
37
36
90
80
70
60
50
40
30
20
10
0
f= 6.8GHz
VDS= 10V
IDS≅ 4.4A
Po
ηadd
26
28
30
32
34
36
Pin (dBm)
3
TIM6472-16UL
Power Dissipation vs. Case Temperature
100
80
60
40
20
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. Output Power Characteristics
-20
-30
-40
-50
-60
VDS= 10V
IDS≅ 4.4A
f= 6.8GHz
Δf= 5MHz
27
29
31
33
35
37
Po(dBm), Single Carrier Level
4
相关型号：
TIM6472-60SL
TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power
TOSHIBA
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