TIM7785-16SL [TOSHIBA]
MICROWAVE POWER GaAs FET; 微波功率GaAs FET
| 型号： | TIM7785-16SL |
| 厂家： | 
TOSHIBA |
| 描述： | MICROWAVE POWER GaAs FET |
| 文件： | 总4页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM7785-16SL
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 31.5dBm
Single Carrier Level
HIGH GAIN
G1dB=5.5dB at 7.7GHz to 8.5GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
HIGH POWER
P1dB=42.5dBm at 7.7GHz to 8.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
°
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
P1dB
dBm 41.5 42.5
⎯
G1dB
dB
4.5
5.5
4.4
⎯
VDS= 10V
f= 7.7 to 8.5GHz
IDS1
ΔG
ηadd
IM3
A
dB
%
5.0
±0.8
⎯
⎯
Gain Flatness
⎯
⎯
⎯
29
Power Added Efficiency
3rd Order Intermodulation
Distortion
Two-Tone Test
Po=31.5dBm
dBc
-42
-45
⎯
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
Drain Current
IDS2
A
4.4
5.0
80
⎯
⎯
C
°
Channel Temperature Rise
ΔTch
⎯
X Rth(c-c)
Recommended Gate Resistance(Rg): 100 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
°
CHARACTERISTICS
SYMBOL
CONDITIONS
VDS= 3V
UNIT MIN. TYP. MAX.
Transconductance
Gm
mS
3600
-2.5
10.5
⎯
⎯
-1.0
⎯
⎯
-4.0
⎯
IDS= 6.0A
VDS= 3V
IDS= 60mA
VDS= 3V
Pinch-off Voltage
VGSoff
IDSS
V
Saturated Drain Current
A
VGS= 0V
Gate-Source Breakdown
Voltage
VGSO
Rth(c-c)
IGS= -200μA
V
-5
⎯
C/W
°
Thermal Resistance
Channel to Case
1.5
2.0
⎯
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Oct. 2006
TIM7785-16SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
°
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
VDS
VGS
IDS
UNIT
V
RATING
15
-5
Gate-Source Voltage
Drain Current
V
A
14.0
Total Power Dissipation (Tc= 25 C)
PT
W
75
°
C
Channel Temperature
Storage Temperature
Tch
175
°
C
°
Tstg
-65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM7785-16SL
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=10V
IDS≅4.4A
Pin=37.0dBm
43
42
41
40
7.7
7.9
8.1
8.3
8.5
Frequency (GHz)
Output Power(Pout) vs. Input Power(Pin)
45
freq.=8.1GHz
44
43
42
41
40
39
38
37
36
VDS=10V
IDS≅4.4A
80
70
60
50
40
30
20
10
29
31
33
35
37
39
Pin(dBm)
3
TIM7785-16SL
POWER DISSIPATION vs. CASE TEMPERATURE
90
60
30
0
0
40
80
Tc (°C)
120
160
200
IM3 vs. Output Power Characteristics
-10
-20
-30
-40
-50
-60
VDS=10V
IDS≅4.4A
freq.=8.1GHz
Δf=5MHz
27
29
31
Pout(dBm) @Single carrier level
33
35
37
4
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