TLP1032 [TOSHIBA]
Domestic electrical appliances such as VTRs and CD players; 家庭电器,如录像机和CD播放器![TLP1032](http://pdffile.icpdf.com/pdf1/p00119/img/icpdf/TLP1032_653485_icpdf.jpg)
型号: | TLP1032 |
厂家: | ![]() |
描述: | Domestic electrical appliances such as VTRs and CD players |
文件: | 总9页 (文件大小:226K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TLP1032(F), TLP1033A(F)
TOSHIBA Photointerrupter Infrared LED + Photo IC
TLP1032(F), TLP1033A(F)
Lead(Pb)-Free
Domestic electrical appliances such as VTRs and
CD players
Office equipment such as photocopiers, printers
and fax machines
Vending machines
Position detectors
The TLP1032(F)/TLP1033A(F) is a high-withstanding-voltage
photo-interrupter for digital output. The device combines a
high-optical-output GaAs infrared LED with a high-sensitivity,
high-gain Si photo-IC. The photo-IC, which supports a wide range of
systems (3.3 V to 12 V), enables the device to consume less power
than conventional devices. The device also features a narrow slit
width and high resolution.
The short lead package allows automatic mounting.
•
•
Designed for direct mounting on printed circuit boards
(positioning pins included)
TOSHIBA
11-14G1
The short lead package allows automatic mounting:
Lead length of 3.4 ± 0.3 mm
Weight: 0.6 g (typ.)
•
•
•
•
Permissible board thickness: 1.6 mm or less
Gap: 5 mm
Resolution: Slit width of 0.5 mm
Digital output (open-collector)
TLP1032(F) : Low-level output at shielding
TLP1033A(F): High-level output at shielding
Direct connection to logic IC
•
•
•
•
•
Power supply voltage: V
= 2.7 V~15 V
CC
High-speed response
Detector impermeable to visible light
Package material: Polybutylene-terephthalate (UL94V-0, black)
1
2007-10-01
TLP1032(F), TLP1033A(F)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
50
−0.33
−2
mA
F
(Ta > 25°C)
Forward current derating
(Ta > 85°C)
ΔI /°C
F
mA/°C
Reverse voltage
Supply voltage
Output voltage
V
5
V
V
R
V
15
CC
V
15
V
O
Low-level output current (Ta = T
opr
)
I
16
mA
°C
°C
°C
OL
Operating temperature
T
−30~95
−40~100
260
opr
Storage temperature
T
T
stg
Soldering temperature (5 s)
(Note 1)
sol
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Soldering is performed 1.5 mm from the bottom of the package.
Operating Ranges
Characteristic
LED forward current
Symbol
Min
Typ.
Max
Unit
8
I
⎯
20
mA
F
(Note 2)
Supply voltage
V
2.7
⎯
3.3
⎯
⎯
⎯
13.2
13.2
16
V
V
CC
Output voltage
V
O
Low-level output current
Operating temperature
I
⎯
mA
°C
OL
T
opr
−25
95
Note 2: The value 8 mA allows for a 50% optical fluctuation in the LED. The initial value of the threshold input
current is 4 mA or less.
2
2007-10-01
TLP1032(F), TLP1033A(F)
Electrical and Optical Characteristics
(unless otherwise specified: Ta = −30~95°C, V = 2.7~15 V)
CC
Characteristic
Forward voltage
Symbol
Test Conditions
Min
Typ.
Max
Unit
V
I
= 10 mA, Ta = 25°C
F
1.00
⎯
1.15
⎯
1.30
10
V
μA
nm
V
F
Reverse current
I
V = 5 V, Ta = 25°C
R
R
Peak emission wavelength
Operating supply voltage
λ
I
= 15 mA, Ta = 25°C
⎯
940
⎯
⎯
P
F
V
⎯
= *1, Ta = 25°C
= *1
2.7
⎯
15
CC
I
I
I
I
I
⎯
1.6
2.0
1.1
1.2
F
Low-level supply current
High-level supply current
I
mA
mA
CCL
⎯
⎯
F
= *2, Ta = 25°C
= *2
⎯
⎯
F
I
CCH
⎯
⎯
F
= 16 mA, I = *1
OL
F
⎯
0.05
0.3
Ta = 25°C
Low-level output voltage
V
V
OL
I
I
= 16 mA, I = *1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.4
6.3
⎯
3
OL
F
High-level output current
I
= *2, V = 15 V
μA
OH
F
O
Peak sensitivity wavelength
λ
Ta = 25°C
Ta = 25°C
900
⎯
nm
P
L → H threshold input current
H → L threshold input current
Hysteresis
I
I
TLP1032(F)
mA
mA
⎯
FLH
FHL
⎯
4
Ta = 25°C
⎯
3
TLP1033A(F)
⎯
4
TLP1032(F)
TLP1033A(F)
TLP1032(F)
TLP1033A(F)
TLP1032(F)
TLP1033A(F)
TLP1032(F)
TLP1033A(F)
TLP1032(F)
TLP1033A(F)
0.67
1.5
⎯
⎯
⎯
9
I
/I
FHL FLH
⎯
Propagation delay time (L → H)
Propagation delay time (H → L)
Rise time
t
t
pLH
pHL
⎯
15
15
9
⎯
V
I
R
= 3.3 V
CC
= 15 mA
⎯
F
L
μs
= 10 kΩ
0.02
0.8
0.8
0.02
0.5
3
Ta = 25°C
t
r
3
Fall time
t
f
0.5
*1
*2
0 mA for the TLP1032(F); 15 mA for the TLP1033A(F).
15 mA for the TLP1032(F); 0 mA for the TLP1033A(F).
3
2007-10-01
TLP1032(F), TLP1033A(F)
Note 3: The switching time measurement circuit and waveform are as follows:
TLP1032(F)
50%
Constant-voltage
circuit
V
V
= 3.3 V
I
F
CC
t
t
pHL
pLH
R
L
I
F
V
OH
90%
OUT
V
Amp
OUT
1.5 V
10%
V
OL
t
r
t
f
TLP1033A(F)
50%
Constant-voltage
circuit
V
V
= 3.3 V
I
F
CC
t
t
pLH
pHL
R
L
I
F
V
OH
90%
10%
OUT
V
Amp
OUT
1.5 V
V
OL
t
t
r
f
Markings
Monthly lot number
Month of manufacture (January to December denoted by the letters A to L respectively)
Year of manufacture (the last digit of the year of manufacture)
Precautions
•
When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse the
entire package in the cleaning solvent. Chemical residue on the LED emitter or the photodetector inside the photo-IC
case may adversely affect the optical characteristics of the device and may drastically reduce the threshold input
current.
•
The case is made of polybutylene-terephthalate. Oil or chemicals may cause the package to melt or crack. Care
should be taken regarding the environment in which the device is to be installed.
Mount the device on a level surface.
•
•
•
•
Output fluctuates for 100 μs after power-on while the internal circuit stabilizes.
To stabilize the power line, insert a bypass capacitor of up to 0.01 μF between V
and GND, close to the device.
CC
The threshold input current increases over time due to current flowing in the infrared LED. The design of circuits that
are to incorporate the device must take into account the change in threshold input current over time. The change in
threshold input current is equal to the reciprocal of the change in LED infrared optical output.
−1
⎛
⎞
I
I
(t)
(0)
P (t)
O
P (0)
O
FHL
FHL
⎜
⎜
⎟
⎟
=
⎝
⎠
•
Choose a high-quality shutter material that is impermeable to light. If the material is of inferior quality, light from the
LED may pass through the shutter, causing the device to malfunction.
4
2007-10-01
TLP1032(F), TLP1033A(F)
Package Dimensions: TOSHIBA 11-14G1
Unit: mm
Abbreviation
Type
P1032
1033A
TLP1032(F)
TLP1033A(F)
( ): reference value
Weight: 0.6 g (typ.)
Pin Connections
TLP1032(F)
TLP1033A(F)
Constant-voltage
3
Constant-voltage
circuit
3
circuit
4
4
5
1
2
1
2
Amp
Amp
5
1: Anode
2: Cathode
3: V
CC
4: OUT
5: GND
5
2007-10-01
TLP1032(F), TLP1033A(F)
I
– Ta
I
– V
F
(typ.)
(typ.)
(typ.)
F
F
60
50
40
30
20
10
0
100
50
30
10
5
3
Ta = 75°C 50 25
0
−25
1
0.8
−20
0
20
40
60
80
100
0.9
1.0
1.1
1.2
1.3
1.4
Ambient temperature Ta (°C)
Forward voltage
V
(V)
F
V
– I
(typ.)
t
, t
– I
F
OL
OL
pLH pHL
0.1
10
8
Ta = 25°C
Ta = 25°C
V
= 3.3 V
V
= 3.3 V
R = 10 kΩ
L
CC
CC
0.05
0.03
I
I
= 15 mA (TLP1033A(F))
F
F
= 0
(TLP1032(F))
t
(TLP1032(F))
pHL
t
pLH (TLP1033A(F))
6
0.01
4
0.005
2
t
t
pLH (TLP1032(F))
pHL (TLP1033A(F))
0.003
0.002
0.3 0.5
1
3
5
10
30
0
0
10
20
30
40
50
60
Low-level output current
I
(mA)
OL
Forward current
I
(mA)
F
t , t – R
r
(typ.)
t
, t – R
pLH pHL L
f
L
20
9
8
7
6
5
4
3
2
1
Ta = 25°C
Ta = 25°C
t
pLH
10
V
= 3.3 V
CC
V
I
= 3.3 V
t
pHL
CC
5
3
I
= 15 mA
F
= 15 mA
F
t
t
(TLP1032(F))
f
1
r (TLP1033A(F))
0.5
0.3
(TLP1032(F))
(TLP1033A(F))
0.1
t
t
(TLP1032(F))
r
0.05
0.03
(TLP1032(F))
f (TLP1033A(F))
(TLP1033A(F))
0.01
0.1
0
0.1
0.3 0.5
1
3
5
10
30 50 100
300 500
0.3 0.5
1
3
5
10
30 50 100
Load resistance
R
L
(kΩ)
Load resistance
R
L
(kΩ)
6
2007-10-01
TLP1032(F), TLP1033A(F)
TLP1032(F) Detection position
characteristic (1)
TLP1032(F) Detection position
characteristic (2)
(typ.)
(typ.)
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta = 25°C
= 3.3 V
V
CC
= 10 kΩ
Ta = 25°C
R
L
V
R
= 3.3 V
= 10 kΩ
CC
L
I
= 20 mA
F
Shutter
I
= 20 mA
−
F
0
+
d
d
Shutter
Detection position
+1.25
−1.35
Detection position
d = 0 ± 0.3 mm
d = 7.95
mm
−0.4
−0.2
0
0.2
0.4
0.6
0.8
7.0
7.2
7.4
7.6
7.8
8.0
8.2
Distance
d
(mm)
Distance
d
(mm)
TLP1033A(F) Detection position
characteristic (1)
TLP1033A(F) Detection position
characteristic (2)
(typ.)
(typ.)
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
0
Ta = 25°C
= 3.3 V
V
CC
= 10 kΩ
Ta = 25°C
R
L
V
R
= 3.3 V
CC
= 10 kΩ
I
= 20 mA
F
L
Shutter
I
= 20 mA
−
F
0
+
d
d
Shutter
Detection position
+1.25
−1.35
Detection position
d = 0 ± 0.3 mm
d = 7.95
mm
−0.4
−0.2
0
0.2
0.4
0.6
0.8
7.0
7.2
7.4
7.6
7.8
8.0
8.2
Distance
d
(mm)
Distance
d
(mm)
7
2007-10-01
TLP1032(F), TLP1033A(F)
Relative Positioning of Shutter and Device
For normal operation, position the shutter and the device as shown in the figure below. Take into account the detection
direction characteristic and switching time of the device in determining the shutter slit width and pitch.
Shutter
A
A’
Unit: mm
Center of sensor
Cross section between A and A’
8
2007-10-01
TLP1032(F), TLP1033A(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
9
2007-10-01
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