TLP131(GB) [TOSHIBA]

Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, MINI FLAT, 11-4C2, SOP-5/6;
TLP131(GB)
型号: TLP131(GB)
厂家: TOSHIBA    TOSHIBA
描述:

Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, MINI FLAT, 11-4C2, SOP-5/6

输出元件 光电
文件: 总9页 (文件大小:179K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP131  
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor  
TLP131  
Unit in mm  
Office Machine  
Programmable Controllers  
AC / DCInput Module  
Telecommunication  
The TOSHIBA mini flat coupler TLP131 is a small outline coupler,  
suitable for surface mount assembly.  
TLP131 consists of a photo transistor, optically coupled to a gallium  
arsenide infrared emitting diode.  
·
·
Collectoremitter voltage: 80V (min.)  
Current transfer ratio: 50% (min.)  
Rank GB: 100% (min.)  
·
·
Isolation voltage: 3750Vrms (min.)  
UL recognized: UL1577, file No. E67349  
TLP131 base terminal is for the improvement of speed, reduction of dark  
current, and enable operation.  
TOSHIBA  
114C2  
Weight: 0.09 g  
Pin Configurations (top view)  
1
3
6
5
4
1 : Anode  
3 : Cathode  
4 : Emitter  
5 : Collector  
6 : Base  
1
2002-09-25  
TLP131  
Current Transfer Ratio  
Current Transfer  
Ratio (%)  
(I / I )  
C
F
Type  
Classification  
Marking Of Classification  
I
= 5mA, V = 5V, Ta = 25°C  
F
CE  
Min.  
50  
Max.  
600  
150  
300  
600  
(None)  
Rank Y  
BLANK, Y, Y , G, G , B, B , GB  
50  
Y, Y  
TLP131  
Rank GR  
Rank GB  
100  
100  
G, G  
G, G , B, B , GB  
Note: Application type name for certiffication test,please use standard product type name,i.e.  
TLP131(GB): TLP131  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Forward current  
I
50  
-0.7  
1
mA  
mA / °C  
A
F
Forward current derating (Ta53°C)  
Peak forward current (100µs pulse,100pps)  
Reverse voltage  
I / °C  
F
I
FP  
V
5
V
R
Junction temperature  
T
125  
80  
°C  
j
Collector-emitter voltage  
V
V
CEO  
CBO  
ECO  
EBO  
Collector-base voltage  
V
V
V
80  
V
Emitter-collector voltage  
7
V
Emitter-base voltage  
7
V
Collector current  
I
50  
mA  
mA  
mW  
mW / °C  
°C  
C
Peak collector current (10ms pulse,100pps)  
Power dissipation  
I
100  
150  
-1.5  
125  
-55~125  
-55~100  
260  
200  
-2.0  
3750  
CP  
P
C
Power dissipation derationg (Ta 25°C)  
Junction temperature  
P / °C  
C
T
j
Storage temperature range  
Operating temperature range  
Lead soldering temperature (10s)  
Total package power dissipation  
Total package power dissipation derating (Ta 25°C)  
T
°C  
stg  
opr  
T
°C  
T
°C  
sol  
P
mW  
mW / °C  
Vrms  
T
P / °C  
T
Isolation voltage (AC, 1min., RH60%)  
(Note 1)  
BV  
S
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted  
together.  
2
2002-09-25  
TLP131  
Recommended Operating Conditions  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Supply voltage  
Forward current  
Collector current  
V
5
16  
1
48  
25  
10  
85  
V
CC  
I
mA  
mA  
°C  
F
I
C
Operating temperature  
T
-25  
opr  
Individual Electrical Characteristics (Ta = 25°C)  
Characteristic  
Forward voltage  
Symbol  
Test Condition  
I = 10 mA  
Min.  
Typ.  
Max.  
Unit  
V
1.0  
1.15  
1.3  
10  
V
F
F
Reverse current  
Capacitance  
I
V
= 5 V  
R
µA  
pF  
R
C
T
V = 0, f = 1 MHz  
30  
Collector-emitter  
V
V
I
I
= 0.5mA  
= 0.1mA  
80  
7
V
V
(BR)CEO  
(BR)ECO  
C
E
breakdown voltage  
Emitter-collector  
breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
V
V
I
I
= 0.1mA  
= 0.1mA  
80  
7
10  
2
V
V
(BR)CBO  
C
E
(BR)EBO  
V
V
= 48V  
100  
50  
nA  
µA  
CE  
CE  
collector dark current  
Collector dark current  
I
CEO  
= 48V,Ta = 85°C  
V
= 48V,Ta = 85°C  
CE  
BE  
I
I
0.5  
10  
µA  
CER  
R
= 1MΩ  
Collector dark current  
V
V
= 10V  
0.1  
400  
10  
nA  
CBO  
CB  
CE  
DC forward current gain  
Capacitance (collector to emitter)  
h
FE  
= 5V,I = 0.5mA  
C
C
CE  
V = 0, f = 1MHz  
pF  
Coupled Electrical Characteristics (Ta = 25°C)  
Characteristic  
Current transfer ratio  
Symbol  
/ I  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
%
50  
100  
60  
10  
0.2  
1
600  
600  
I
I
= 5 mA, V = 5 V  
F
F
CE  
I
C
F
Rank GB  
= 1 mA, V = 0.4 V  
CE  
Saturated CTR  
I
/ I  
%
C
F (sat)  
Rank GB  
30  
Base photo-current  
I
I
I
= 5mA,V = 5V  
µA  
PB  
F
CB  
= 2.4 mA, I = 8 mA  
F
0.4  
C
Collector-emitter  
V
V
CE (sat)  
I
= 0.2 mA, I = 1 mA  
F
saturation voltage  
C
Rank GB  
0.4  
10  
Off-state collector current  
I
I
= 0.7mA, V = 48 V  
CE  
µA  
C (off)  
F
3
2002-09-25  
TLP131  
Isolation Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
= 0, f = 1 MHz  
Min.  
Typ.  
Max.  
Unit  
Capacitance (input to output)  
Isolation resistance  
C
R
V
V
5×1010  
3750  
0.8  
1014  
pF  
S
S
S
= 500 V  
S
AC, 1 minute  
Vrms  
Vdc  
Isolation voltage  
BV  
S
AC, 1 second, in oil  
DC, 1 minute, in oil  
10000  
10000  
Switching Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
µs  
Rise time  
t
2
3
r
Fall time  
t
f
V
= 10 V, I = 2 mA  
C
CC  
R = 100Ω  
L
Turn-on time  
Turn-off time  
Turn-on time  
Storage time  
Turn-off time  
Turn-on time  
Storage time  
Turn-off time  
t
t
3
on  
off  
3
t
2
ON  
R = 1.9 k%)  
(Fig.1)  
(Fig.1)  
L
BE  
CC  
R
= OPEN  
µs  
µs  
t
25  
40  
2
s
V
= 5 V, I = 16 mA  
F
t
OFF  
t
ON  
R = 1.9 k%)  
L
BE  
CC  
R
= 220 kΩ  
t
20  
30  
s
V
= 5 V, I = 16 mA  
F
t
OFF  
Fig. 1 Switching time test circuit  
IF  
VCC  
VCE  
IF  
t
S
RL  
VCC  
VCE  
4.5V  
0.5V  
RBE  
tON  
tOFF  
4
2002-09-25  
TLP131  
I
Ta  
P – Ta  
C
F
100  
80  
200  
160  
120  
60  
40  
20  
0
80  
40  
0
100  
120  
-20  
100  
120  
40  
60  
80  
40  
60  
80  
0
20  
0
20  
-20  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
I
– D  
I
– V  
F
FP  
R
F
100  
3000  
1000  
Ta = 25°C  
Pulse width 100ms  
50  
30  
Ta = 25°C  
500  
300  
10  
5
3
100  
50  
30  
1
0.5  
0.3  
10  
3
100  
3
2
1
-
-
-
10  
3
10  
3
10  
3
Duty cycle ratio  
D
R
0.1  
1.6  
1.8  
1.4  
F
0.6  
0.8  
1.0  
1.2  
Forward voltage  
V
(V)  
DV / DTa – I  
I
– V  
FP  
F
F
FP  
-3.2  
-2.8  
1000  
500  
300  
-2.4  
-2.0  
-1.6  
100  
50  
30  
10  
-1.2  
-0.8  
-0.4  
Pulse width 10ms  
Repetitive  
Frequency = 100Hz  
Ta = 25°C  
5
3
1
0.1  
0.3 0.5  
1
3
5
10  
30 50  
2.2  
2.6  
3.0  
1.0  
1.4  
1.8  
Forward current  
I
(mA)  
F
Pulse forward voltage  
V
(V)  
FP  
5
2002-09-25  
TLP131  
I
– V  
I – V  
C CE  
C
CE  
50  
40  
30  
30  
20  
Ta = 25°C  
Ta = 25°C  
I
= 50mA  
F
50mA  
30mA  
40mA  
30mA  
20mA  
15mA  
20mA  
10mA  
10mA  
P
C(MAX.)  
20  
10  
I
= 5mA  
10  
0
5mA  
2mA  
F
0
6
8
10  
2
4
0
0
0.6  
0.8  
1.0  
0.2  
0.4  
Collector–emitter voltage  
V
(V)  
Collector–emitter voltage  
V
(V)  
CE  
CE  
I
– I  
F
I
/ I – I  
F
C
C
F
1000  
100  
50  
V
V
V
= 10V  
= 5V  
= 0.4V  
Ta = 25°C  
Ta = 25°C  
CE  
CE  
CE  
30  
500  
300  
10  
SAMPLE A  
SAMPLE A  
5
3
SAMPLE B  
100  
50  
1
V
V
V
= 10V  
= 5V  
= 0.4V  
CE  
CE  
CE  
SAMPLE B  
0.5  
0.3  
0.1  
0.3 0.5  
0.3 0.5  
1
3
5
10  
30 50  
100  
1
3
5
10  
30 50  
100  
Forward current  
I
F
(mA)  
Forward current  
I
(mA)  
F
I
– I at R  
I
– I  
PB F  
C
F
BE  
100  
300  
100  
Ta = 25°C  
Ta = 25°C  
50  
30  
V
CE  
= 5V  
I
V
CB  
F
30  
10  
V
CB  
V
CB  
= 0V  
= 5V  
A
5
3
10  
3
V
CC  
I
F
A
1
1
0.5  
0.3  
50kW  
= 500kW 100kW  
R
BE  
0.3  
0.1  
0.1  
0.1  
0.3 0.5  
1
3
5
30 50 100  
0.1  
0.3 0.5  
1
3
5
10  
30 50 100  
10  
Forward current  
I
(mA)  
Forward current  
I
(mA)  
F
F
6
2002-09-25  
TLP131  
I
Ta  
CEO  
V
Ta  
CE(sat)  
101  
100  
0.24  
0.20  
0.16  
0.12  
0.08  
I
I
= 5mA  
= 1mA  
F
c
V
CE  
= 48V  
24V  
10V  
5V  
1
-
10  
0.04  
0
2
3
4
-
10  
10  
10  
80  
100  
20  
40  
60  
-20  
0
-40  
Ambient temperature Ta ()  
-
-
100  
120  
0
60  
80  
20  
40  
Ambient temperature Ta ()  
I
Ta  
Switching Time – RL  
C
100  
Ta = 25℃  
V
CE  
= 5V  
300  
100  
I
= 16mA  
CC  
BE  
F
V
= 5V  
50  
30  
I
= 25mA  
10mA  
F
R
= 220k  
5mA  
10  
50  
30  
t
OFF  
5
3
t
s
10  
1mA  
1
5
3
0.5  
0.3  
0.5mA  
t
ON  
0.1  
1
100  
1
3
5
10  
30  
(k9)  
50  
100  
40  
60  
80  
0
20  
-20  
Load resistance  
R
L
Ambient temperature Ta ()  
7
2002-09-25  
TLP131  
Switching Time – R  
Switching Time – R  
L
BE  
1000  
1000  
500  
Ta = 25℃  
Ta = 25°C  
= 16mA  
I
= 16mA  
F
I
F
V
= 5V  
CC  
500  
300  
V
CC  
= 5V  
R
= 1.9kΩ  
L
t
OFF  
300  
100  
100  
t
OFF  
t
s
50  
30  
50  
30  
t
s
10  
10  
5
3
5
3
t
ON  
R
t
ON  
1
1
50  
100  
1M  
Base-emitter resistance  
3M  
10  
Load resistance  
30  
(9)  
100k  
300k  
1
3
5
(9)  
R
L
BE  
8
2002-09-25  
TLP131  
RESTRICTIONS ON PRODUCT USE  
000707EBC  
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
· The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes  
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the  
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with  
domestic garbage.  
· The products described in this document are subject to the foreign exchange and foreign trade laws.  
· The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other  
rights of the third parties which may result from its use. No license is granted by implication or otherwise under  
any intellectual property or other rights of TOSHIBA CORPORATION or others.  
· The information contained herein is subject to change without notice.  
9
2002-09-25  

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