TLP180(TPLF) [TOSHIBA]
AC Input-Transistor Output Optocoupler;
| 型号： | TLP180(TPLF) |
| 厂家： | 
TOSHIBA |
| 描述： | AC Input-Transistor Output Optocoupler 晶体 光电 二极管 晶体管 光电晶体管 |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP180
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP180
Programmable Controllers
Unit in mm
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP180 is a small outline coupler,
suitable for surface mount assembly.
TLP180 consist of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode connected inverse parallel, and can
operate directly by AC input current.
•
•
Collector−emitter voltage: 80 V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
•
•
•
Isolation voltage: 3750Vrms (min.)
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065:2002, certificate no.8285
BS EN60950-1:2002, certificate no.8286
TOSHIBA
11−4C1
Weight: 0.09 g
Pin Configuration (top view)
1
3
6
4
1: Anode, Cathode
3: Cathode, Anode
4: Emitter
6: Collector
1
2007-10-01
TLP180
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
±50
−0.7
±1
mA
mA / °C
A
F(RMS)
Forward current detating (Ta≥53°C)
ΔI / °C
F
Pulse forward current
Junction temperature
(Note1)
I
FP
T
j
125
°C
Collector−emitter voltage
Emitter−collector voltage
Collector current
V
V
80
V
CEO
ECO
7
V
I
50
mA
C
Power dissipation
P
150
mW
mW / °C
°C
C
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
ΔP / °C
−1.5
125
C
T
j
Storage temperature range
Operating temperature range
Lead soldering temperature(10s)
Total package power dissipation
T
−55~125
−55~100
260
°C
stg
opr
T
°C
T
°C
sol
P
200
mW
mW / °C
Vrms
T
Total package power dissipation derating (Ta ≥ 25°C)
Isolation voltage (AC,1min.,R.H. ≤ 60%) (Note 2)
ΔP / °C
−2.0
3750
T
BV
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width ≤ 100μs,f=100Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
Collector current
V
―
―
5
16
1
48
20
10
85
V
CC
I
mA
mA
°C
F(RMS)
IC
―
Operating temperature
T
opr
−25
―
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP180
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
= ±10 mA
F
Min.
Typ.
Max.
Unit
V
I
1.0
1.15
60
1.3
V
F
Capacitance
C
V = 0, f = 1 MHz
―
―
pF
T
Collector−emitter
V
V
I
I
= 0.5 mA
= 0.1 mA
80
7
―
―
―
―
V
V
(BR) CEO
(BR) ECO
C
breakdown voltage
Emitter−collector
breakdown voltage
E
V
= 48 V (ambient light
CE
0.01
(2)
0.1
(10)
below 1000Lx)
―
μA
(Note3)
Collector dark current
I
CEO
V
= 48 V (ambient light
CE
2
(4)
50
(50)
Ta = 85°C
below 1000Lx)
―
―
μA
(Note3)
Capacitance
(collector to emitter)
C
CE
V = 0, f = 1 MHz
10
―
pF
Note 3: Please use standard electric lamp to light up the device's marking surface.
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
%
50
100
—
—
—
60
—
—
0.2
—
1
600
600
—
I
= ±5 mA, V
= 5 V
F
CE
Rank GB
Current transfer ratio
I / I
C F
IF = ±1 mA, V
= 0.4 V
Rank GB
CE
Saturated CTR
I
/ I
F (sat)
%
V
C
V
30
—
—
I
I
= 2.4 mA, I = ±8 mA
F
0.4
—
C
C
Collector−emitter
saturation voltage
—
CE (sat)
= 0.2 mA, I = ±1 mA
F
Rank GB
—
0.4
10
Off−state collector current
I
V
= ± 0.7V, V = 48 V
CE
—
μA
C(off)
F
I
(I = −5mA) / I (I = 5mA)
C
F
C
F
CTR symmetry
I
0.33
1
3
—
C (ratio)
(Note4)
I
(I = I ,V
(I = I ,V
C1 F F1 CE
= 5V)
= 5V)
C2 F F2 CE
Note 4 : I (ratio)=
C
I
I
I
C1
C2
I
I
F1
F2
V
CE
3
2007-10-01
TLP180
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 0V, f = 1 MHz
Min.
Typ.
Max.
Unit
Capacitance input to output
Isolation resistance
C
R
V
V
―
5×1010
3750
―
0.8
1014
―
―
―
―
―
pF
S
S
S
= 500 V, R.H. ≤ 60%
Ω
S
AC, 1 minute
―
V
rms
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
―
V
dc
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Rise time
t
―
―
―
―
―
―
―
2
3
―
―
―
―
―
―
―
r
Fall time
t
f
V
= 10 V, I = 2 mA
C
CC
R = 100Ω
μs
L
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
t
t
3
on
off
3
t
2
ON
R = 1.9 kΩ
V
(Fig.1)
L
CC
μs
t
25
40
s
= 5 V, I = ±16 mA
F
t
OFF
Fig. 1: Switching time test circuit
I
F
I
F
V
V
CC
t
S
R
L
V
CC
4.5V
0.5V
V
t
CE
CE
t
ON
OFF
4
2007-10-01
TLP180
I
– Ta
P
– Ta
C
F
100
200
80
60
40
160
120
80
20
0
40
0
−20
0
20
40
60
80
100
120
−20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
– D
I – V
F F
FP
R
3000
1000
100
Pulse width ≤ 100μs
Ta = 25°C
10
1
500
300
100
0.1
0.01
50
30
10
3
3
2
−
−1
0
−
25
°C
10
3
10
3
10
D
3
10
85°C
0.4
−25°C
Duty cycle ratio
0.001
R
0
0.8
1.2
1.6
2
Forward voltage
V
F
(V)
25
°C
ΔV ΔTa – I
I
– V
FP FP
F /
F
−3.2
−2.8
1000
500
300
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
100
50
30
10
Pulse width ≤ 10μs
Repetitive
5
3
frequency = 100Hz
Ta = 25°C
1
0.6
0.1
0.3 0.5
1
3
5
10
30 50
1.0
1.4
1.8
2.2
2.6
3.0
Forward current
I
(mA)
F
Pulse forward voltage
V
(V)
FP
5
2007-10-01
TLP180
I
C
– V
CE
I
C
– V
CE
50
40
30
20
10
Ta = 25°C
Ta = 25°C
50mA
40mA
30mA
50mA
30mA
20mA
15mA
20mA
30
20
10mA
10mA
5mA
P
(MAX.)
C
I
= 5mA
F
10
2mA
0
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
I
– Ta
I
– I
F
CEO
C
1
0
10
Ta = 25°C
100
50
30
10
10
Sample A
5
3
1
2
−
10
V
= 48V
CE
Sample B
1
24V
10V
5V
0.5
0.3
V
= 10V
CE
CE
CE
−
V
V
= 5V
10
= 0.4V
0.1
0.1
0.3 0.5
1
3
5
10
30 50
Forward current
I
(mA)
3
4
F
−
−
10
10
0
20
40
60
80
100
Ambient temperature Ta (°C)
I
/ I – I
F F
C
1000
Ta = 25°C
Sample A
500
300
100
Sample B
50
30
V
= 10V
= 5V
CE
CE
CE
V
V
= 0.4V
10
0.1
0.3 0.5
1
3
5
10
30 50
Forward current
I
(mA)
F
6
2007-10-01
TLP180
V
– Ta
I
– Ta
CE(sat)
C
0.24
0.20
100
I
I
= 1mA
V
= 5V
F
CE
= 0.2mA
C
50
30
I
25mA
F =
10mA
5mA
0.16
0.12
0.08
I
= 5mA, I = 1mA
C
F
10
I
= 1mA, I = 0.2mA
5
3
F
C
0.04
0
1mA
1
−40
−20
0
20
40
60
80
100
0.5
0.3
Ambient temperature Ta (°C)
0.5mA
0.1
−20
0
20
40
60
80
100
Switching Time – R
L
Ambient temperature Ta (°C)
1000
Ta = 25°C
= 16mA
I
F
V
= 5V
CC
500
300
Switching Time – Ta
160
t
OFF
50
30
t
OFF
100
t
s
50
30
t
s
10
5
3
t
ON
10
1
5
3
0.5
0.3
I
= 16mA
F
t
ON
V
= 5V
CC
RL = 1.9kΩ
1
0.1
−20
0
20
40
60 80
100
1
3
5
10
30
50
100
Ambient temperature Ta (°C)
Load resistance
R
L
(kΩ)
7
2007-10-01
TLP180
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
8
2007-10-01
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