TLP2601_07 [TOSHIBA]
Simplex / Multiplex Data Transmission; 单/多路数据传输
| 型号： | TLP2601_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Simplex / Multiplex Data Transmission |
| 文件： | 总9页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TLP2601
TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC
TLP2601
Isolated Line Receiver
Unit in mm
Simplex / Multiplex Data Transmission
Computer−Peripheral Interface
Microprocessor System Interface
Digital Isolation For A/D, D/A Conversion
Direct Replacement For HCPL−2601
The TOSHIBA TLP2601 a photocoupler which combines a GaAℓAs IRed
as the emitter and an integrated high gain, high speed photodetector.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000V/μs.
TOSHIBA
11−10C4
•
•
•
•
•
•
Input current thresholds: I = 5mA max.
F
Weight: 0.54g
Isolation voltage: 2500Vrms min.
Switching speed: 10MBd
Common mode transient immunity: 1000V/μs min.
Guaranteed performance over temp.: 0°C~70°C
UL Recognized: UL1577, file No. E67349
Pin Configuration (top view)
1
2
8
7
Truth Table
(positive logic)
3
4
6
5
Input
Enable
Output
SHIELD
H
L
H
H
L
L
H
H
H
Schematic
H
L
I
I
CC
F
L
V
V
2
CC
I
O
8
+
-
A 0.01 to 0.1μF bypass capacitor must be
connected between pins 8 and 5 (see Note 1).
V
F
O
6
3
GND
SHIELD
5
I
E
7
V
E
1
2007-10-01
TLP2601
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Input current, low level
Input current, high level
Supply voltage**, output
High level enable voltage
Low level enable voltage
I
0
6.3 (*)
4.5
2.0
0
⎯
⎯
⎯
⎯
⎯
250
20
μA
mA
V
FL
I
FH
V
V
5.5
CC
V
V
EH
CC
V
0.8
8
V
EL
Fan out (TTL load)
N
⎯
⎯
⎯
⎯
Operating temperature
T
0
70
°C
opr
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
(*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation.
Initial input current threshold value is 5.0mA or less.
**This item denotes operating ranges, not meaning of recommended operating conditions.
Absolute Maximum Ratings (no derating required)
Characteristic
Forward current
Symbol
Rating
Unit
I
20
5
mA
V
F
Reverse voltage
V
R
Output current
I
25
mA
V
O
Output voltage
V
−0.5~7
O
Supply voltage
V
7
V
V
CC
(1 minute maximum)
Enable input voltage
V
5.5
E
(not to exceed V
by more than 500mV)
CC
Output collector power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
Isolation voltage
P
40
−40~85
−55~125
260
mW
°C
o
T
opr
T
°C
stg
sol
(**)
T
°C
2500
Vrms
BV
S
(R.H.≤ 60%,AC 1min.,
(Note 10)
3540
V
dc
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(**) 1.6mm below seating plane.
2
2007-10-01
TLP2601
Electrical Characteristics (Ta = 0°C ~70°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min.
Typ.
1
Max.
Unit
V
= 5.5V, V = 5.5V
O
CC
High level output current
I
⎯
250
μA
OH
I
= 250μA, V = 2.0V
F
E
V
V
= 5.5V, I = 5mA
F
CC
Low level output voltage
High level supply current
V
⎯
⎯
0.4
7
0.6
15
V
OL
= 2.0V, I (sinking) = 13mA
OL
E
I
V
= 5.5V, I = 0, V = 0.5V
mA
CCH
CC
F
E
V
V
= 5.5V, I = 10mA
F
CC
Low level supply current
I
⎯
12
19
mA
CCL
= 0.5V
E
Low level enable current
High level enable current
I
V
V
= 5.5V, V = 0.5V
E
⎯
⎯
−1.6
−1
−2.0
mA
mA
EL
CC
CC
I
= 5.5V, V = 2.0V
E
⎯
EH
High level enable voltage
V
(Note 11)
2.0
⎯
⎯
EH
V
Low level enable voltage
Input forward voltage
V
⎯
⎯
⎯
⎯
0.8
EL
V
I
I
= 10mA, Ta = 25℃
= 10μA, Ta = 25℃
1.65
1.75
V
V
F
F
Input reverse breakdown
voltage
BV
5
⎯
45
⎯
⎯
⎯
R
R
Input capacitance
C
V
= 0, f = 1MHz
F
⎯
⎯
pF
IN
Input diode temperature
coefficient
ΔV /ΔT
I = 10mA
F
−2.0
mV / °C
F
A
Relative humidity = 45%
Ta=25℃, t = 5 second
Input−output insulation
I
⎯
⎯
1
μA
I−O
leakage current
V
= 3000Vdc,
(Note 10)
I−O
V
= 500V, R.H.≤ 60%
1014
0.6
I−O
Resistance (input−output)
Capacitance (input−output)
R
C
5×1010
⎯
⎯
Ω
I−O
I−O
(Note 10)
(Note 10)
f = 1MHz,
⎯
pF
(**)All typ.values are at VCC = 5V, Ta = 25°C.
3
2007-10-01
TLP2601
Switching Characteristics (Ta = 25℃, V = 5 V)
CC
Test
Circuit
Characteristic
Symbol
Test Condition
Min.
Typ.
60
Max.
75
Unit
ns
Propagation delay time to
high output level
t
t
―
pLH
pHL
R = 350Ω, C = 15pF
L
L
I
= 7.5mA
Propagation delay time to
low output level
F
1
―
60
75
ns
(Note 2), (Note 3),
(Note 4)&(Note 5)
Output rise time(10−90%)
Output fall time(90−10%)
Propagation delay time of
t
―
―
30
30
―
―
ns
ns
r
t
f
R = 350Ω, C = 15pF
L
L
t
t
―
25
―
ns
ELH
EHL
enable from V
to V
I = 7.5mA
F
EH
EL
2
V
V
= 3.0V
= 0.5V
EH
EL
Propagation delay time of
enable from V to V
―
25
―
ns
EL
EH
(Note 6)&(Note 7)
V
= 400V
CM
Common mode transient
immunity at high output
level
R = 350Ω
L
CM
1000 10000
―
―
V/μs
V/μs
H
V
= 2V
O(min.)
I
= 0mA,
(Note 9)
F
3
V
= 400V
CM
Common mode transient
immunity at low output
level
R = 350Ω
L
CM
−1000 −10000
L
V
= 0.8V
O(max.)
I
= 7.5mA,
(Note 8)
F
4
2007-10-01
TLP2601
Test Circuit 1.
5V
t
and t
pLH
pHL
Pulse
1
2
3
4
8
7
6
5
V
CC
generator
I
I
= 7.5mA
F
F
R
L
Z
O
= 50Ω
Input I
F
= 3.75mA
t = 5ns
r
V
O
t
pHL
(*)
Output
monitor-
ing
I
V
V
F
OH
OL
t
pLH
C
L
Monitoring
node
Output V
O
GND
1.5V
node
(*) C is approximately 15pF which includes probe and stray wiring capacitance.
L
Test Circuit 2.
Input V
E
monitoring node
t
and t
EHL
ELH
Pulse
generator
5V
Z
O
= 50 Ω
t = 5ns
r
1
2
3
4
8
V
CC
3.0V
1.5V
R
7.5mA
dc
L
7
6
5
Input V
E
V
O
t
EHL
I
F
(*)
Output
monitor-
ing
V
V
OH
OL
t
ELH
C
L
Output V
O
GND
1.5V
node
(*) C is approximately 15pF which includes probe and stray wiring capacitance.
L
Test Circuit 3.
Transient Immunity and Typ. Waveforms.
1
8
V
5V
CC
400V
0V
I
F
10%
90%
2
7
6
5
R
L
10%
90%
V
A
CM
3
V
O
t
t
f
r
B
4
GND
V
5V
V
V
O
O
Switch at A : I = 0mA
V
FF
Pulse gen.
F
Z
O
= 50 Ω
CM
V
OL
Switch at B : I = 5mA
F
5
2007-10-01
TLP2601
I
– V
F
ΔV / ΔTa – I
F
F
F
100
10
1
-2.6
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
Ta = 25°C
0.1
1
0.1
0.3
3
10
30
0.01
1.0
1.2
1.4
1.6
1.8
Forward current
I
F
(mA)
Forward voltage
V
F
(V)
I
– Ta
V
– I
F
OH
O
100
8
6
4
2
0
V
= 5V
CC
I
= 250μA
F
Ta = 25°C
50
30
V
V
= 5.5V
CC
= 5.5V
O
R =350Ω
L
1kΩ
4kΩ
10
5
3
2
0
3
4
6
1
5
1
Forward current
I
F
(mA)
0
10
20
30
40
50
60
70
Ambient temperature Ta (°C)
V
– I
V
– T
OL a
O
F
8
6
4
2
0
I
= 5mA
F
V
= 5V
CC
0.5
0.4
0.3
V
V
= 5.5V
CC
R =350Ω
L
= 2V
E
R =4kΩ
L
I
=16mA
OL
Ta = 70°C
0°C
12.8mA
9.6mA
6.4mA
0
1
2
3
4
6
5
0.2
Forward current
I
F
(mA)
80
0
20
40
60
Ambient temperature Ta (°C)
6
2007-10-01
TLP2601
t
t
– I
t
t
– Ta
pHL, pLH
F
pHL, pLH
120
120
100
R = 4kΩ
L
t
R =4kΩ
pLH
L
t
pLH
100
80
350Ω
1kΩ
t
pLH
1kΩ
t
80
60
40
20
pLH
350Ω
350Ω
350Ω
t
pLH
t
pHL
60
1kΩ
4kΩ
t
1kΩ
4kΩ
pHL
40
T
= 25°C
a
20
V
= 5 V
CC
V
= 5V
CC
17
I
= 7.5mA
60
F
0
9
5
11
13
15
19
7
0
10
20
30
0
40
50
70
Forward current
I
F
(mA)
Ambient temperature Ta (°C)
t
t
– Ta
t t – Ta
r, f
EHL, ELH
320
300
80
70
60
50
40
30
20
10
0
V
= 5V
CC
V
V
= 5V
= 3V
CC
I
= 7.5mA
F
EH
R = 4kΩ
L
t
R = 4kΩ
I
= 7.5mA
ELH
L
F
t
f
f
280
80
1kΩ
t
60
40
20
0
350Ω
350Ω
t
f
1kΩ
350Ω
350Ω
t
ELH
t
r
t
ELH
1kΩ
4kΩ
20
10
30
40
50
60
70
0
t
EHL
1kΩ
4kΩ
Ambient temperature Ta (°C)
10
20
30
40
50
60
0
70
Ambient temperature Ta (°C)
7
2007-10-01
TLP2601
Notes
1. The V
supply voltage to each TLP2601 isolator must be bypassed by a 0.1μF capacitor of larger.This can be
CC
either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected
as close as possible to the package V and GND pins of each device.
CC
2.
3.
4.
5.
6.
7.
t
t
t
t
t
t
･
･
･
･
･
･
･
Propagation delay is measured from the 3.75mA level on the low to high transition of the input
current pulse to the 1.5V level on the high to low transition of the output voltage pulse.
pHL
pLH
f
Propagation delay is measured from the 3.75mA level on the high to low transition of the input
current pulse to the 1.5V level on the low to high transition of the output voltage pulse.
Fall time is measured from the 10% to the 90% levels of the high to low transition on the output
pulse.
Rise time is measured from the 90% to 10% levels of the low to high transition on the output
pulse.
r
Enable input propagation delay is measured from the 1.5V level on the low to high transition of
the input voltage pulse to the 1.5V level on the high to low transition of the output voltage pulse.
EHL
ELH
Enable input propagation delay is measured from the 1.5V level on the high to low transition of
the input voltage pulse to the 1.5V level on the low to high transition of the output voltage pulse.
8. CM
9. CM
The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain
L
in the low output state (i.e., V
< 0.8V).
OUT
Measured in volts per microsecond (V / μs).
･
The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain
H
in the high state (i.e., V
> 2.0V).
OUT
Measured in volts per microsecond(V / μs).
Volts/microsecond can be translated to sinusoidal voltages:
(dv
)
CM
V / μs =
= f
V
(p.p.)
CM CM
dt
Max.
Example:
= 318V when f
V
= 1MHz using CM and CM = 1000V / μs data sheet specified
L H
CM
pp
CM
minimum.
10.
･
･
Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and
8 shorted together.
11. Enable
input
No pull up resistor required as the device has an internal pull up resistor.
8
2007-10-01
TLP2601
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
9
2007-10-01
相关型号：
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Optocoupler - Trigger Device Output, 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER, 11-4C1, MINIFLAT-4/6
TOSHIBA
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