TLP281(GR) [TOSHIBA]

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TLP281(GR)
型号: TLP281(GR)
厂家: TOSHIBA    TOSHIBA
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晶体 光电 二极管 晶体管 光电晶体管 输出元件 PC
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TLP281,TLP281-4  
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR  
TLP281,TLP281-4  
PROGRAMMABLE CONTROLLERS  
Unit in mm  
AC/DC-INPUT MODULE  
PC CARD MODEM(PCMCIA)  
TLP281 and TLP281-4 is a very small and thin coupler, suitable  
for surface mount assembly in applications such as PCMCIA Fax  
modem, programmable controllers.  
TLP281 and TLP281-4 consist of photo transistor, optically coupled  
to a gallium arsenide infrared emitting diode.  
z Collector-Emitter Voltage : 80 V (MIN)  
z Current Transfer Ratio  
: 50% (MIN)  
Rank GB  
: 100% (MIN)  
z Isolation Voltage  
z UL Recognized  
z BSI Approved  
: 2500 Vrms (MIN)  
: UL1577 , File No. E67349  
: BS EN 60065: 2002,  
: BS EN 60950-1: 2002  
Certificate No. 8143, 8144  
TOSHIBA  
Weight: 0.05 g  
Unit in mm  
Pin Configuration (top view)  
TLP281  
TLP281-4  
1
2
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
4
3
1:ANODE  
2:CATHODE  
3:EMITTER  
4:COLLECTOR  
TOSHIBA  
10  
9
Weight: 0.19 g  
1,3,5,7  
2,4,6,8  
:ANODE  
:CATHODE  
9,11,13,15 :EMITTER  
10,12,14,16 :COLLECTOR  
1
2007-10-01  
TLP281,TLP281-4  
Current Transfer Ration (%)  
(I / I )  
Classi-  
Fication(*1)  
C
F
TYPE  
Marking of Classification  
I
= 5 mA, V = 5 V, Ta = 25  
F
CE  
Min  
Max  
Blank  
Rank Y  
50  
600  
Blank ,Y ,YE,G,G ,GR,B,BL,GB  
50  
100  
200  
100  
75  
150  
300  
600  
600  
150  
200  
300  
400  
600  
600  
YE  
GR  
BL  
Rank GR  
Rank BL  
Rank GB  
Rank YH  
Rank GRL  
Rank GRH  
Rank BLL  
Blank  
TLP281  
GB  
Y
100  
150  
200  
50  
G
G
B
Blank , GB  
GB  
TLP281-4  
Rank GB  
100  
*1: Ex. rank GB: TLP281 (GB)  
(Note): Application type name for certification test, please use standard product type name, i.e.  
TLP281 (GB): TLP2811 , TLP281−4 (GB): TLP281−4  
2
2007-10-01  
TLP281,TLP281-4  
Absolute Maximum Ratings (Ta = 25)  
RATING  
50  
CHARACTERISTIC  
Forward Current  
SYMBOL  
UNIT  
TLP281  
TLP2814  
I
F
mA  
Forward Current Derating  
Pulse Forward Current  
Reverse Voltage  
I /°C  
0.7 (Ta53°C)  
0.5 (Ta25°C)  
mA /°C  
F
I
1
5
A
V
FP  
V
R
Junction Temperature  
Collector-Emitter Voltage  
Emitter-Collector Voltage  
T
125  
80  
7
°C  
V
j
V
V
CEO  
ECO  
V
Collector Current  
Collector Power Dissipation  
(1 Circuit)  
I
50  
mA  
C
P
150  
100  
mW  
C
Collector Power Dissipation  
Derating(Ta25°C) (1 Circuit)  
P /°C  
1.5  
1.0  
mW /°C  
C
Junction Temperature  
Operating Temperature Range  
Storage Temperature Range  
Lead Soldering Temperature  
T
125  
°C  
°C  
°C  
°C  
j
T
opr  
55~100  
55~125  
260 (10s)  
T
stg  
sol  
T
Total Package Power Dissipation  
(1 Circuit)  
P
200  
170  
mW  
T
Total Package Power Dissipation  
Derating (Ta25°C) (1 Circuit)  
P /°C  
2.0  
1.7  
mW /°C  
Vrms  
T
Isolation Voltage  
(Note1)  
BV  
2500(AC,1min,R.H.60%)  
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
(Note1) Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted  
together.  
Individual Electrical Characteristics (Ta = 25)  
CHARACTERISTIC  
Forward Voltage  
SYMBOL  
TEST CONDITION  
= 10 mA  
F
MIN.  
TYP.  
MAX.  
UNIT  
V
I
I
1.0  
1.15  
1.3  
10  
V
F
Reverse Current  
Capacitance  
V
= 5 V  
R
μA  
pF  
R
C
V = 0, f = 1 MHz  
30  
T
Collector-Emitter  
Breakdown Voltage  
Emitter-Collector  
Breakdown Voltage  
V
V
I
I
= 0.5 mA  
= 0.1 mA  
80  
7
V
(BR) CEO  
(BR) ECO  
C
E
V
V
= 48 V,  
CE  
0.01  
(2)  
0.1  
(10)  
Ambient Light Below  
(100 x)  
μA  
Collector Dark Current  
I
CEO  
(Note2)  
V
= 48 V, Ta = 85°C  
CE  
2
(4)  
50  
(50)  
Ambient Light Below  
(100 x)  
μA  
Capacitance  
(Collector to Emitter)  
C
CE  
V = 0, f = 1 MHz  
10  
pF  
(Note 2) Because of the construction,leak current might be increased by ambient light.  
Please use photocoupler with less ambient light.  
3
2007-10-01  
TLP281,TLP281-4  
Coupled Electrical Characteristics (Ta = 25)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
%
I
= 5 mA, V = 5 V  
CE  
50  
100  
600  
600  
60  
F
Current Transfer Ratio  
I / I  
C F  
Rank GB  
Rank GB  
IF = 1 mA, VCE = 0.4 V  
Saturated CTR  
I
/ I  
F (sat)  
%
C
V
30  
I
I
= 2.4 mA, I = 8 mA  
F
0.4  
C
C
Collector-Emitter  
V
= 0.2 mA, I = 1 mA  
F
0.2  
CE (sat)  
Saturation Voltage  
Rank GB  
0.4  
10  
Off-State Collector Current  
I
V
= 0.7 V, V = 48 V  
CE  
μA  
C (off)  
F
Isolation Characteristics (Ta = 25)  
CHARACTERISTIC  
Capacitance  
SYMBOL  
TEST CONDITION  
= 0 V, f = 1 MHz  
MIN.  
TYP.  
0.8  
MAX.  
UNIT  
C
R
V
V
pF  
S
S
S
S
(Input to Output)  
10  
14  
Isolation Resistance  
= 500 V, R.H.60%  
5×10  
2500  
10  
AC , 1 minute  
Vrms  
Vdc  
Isolation Voltage  
BV  
S
AC , 1 second,in OIL  
DC , 1 minute, in OIL  
5000  
5000  
Switching Characteristics (Ta = 25)  
CHARACTERISTIC  
Rise Time  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
t
r
2
3
Fall Time  
t
f
V
= 10 V, I = 2 mA  
CC C  
R = 100Ω  
μs  
L
Turn-On Time  
Turn-Off Time  
Turn-On Time  
Storage Time  
Turn-Off Time  
t
3
on  
t
3
off  
t
2
ON  
R = 1.9 k(Fig.1)  
L
CC  
μs  
t
25  
40  
s
V
= 5 V, I = 16 mA  
F
t
OFF  
(Fig.1)SWITCHING TIME TEST CIRCUIT  
4
2007-10-01  
TLP281,TLP281-4  
TLP281  
TLP281-4  
TLP281  
TLP281-4  
5
2007-10-01  
TLP281,TLP281-4  
6
2007-10-01  
TLP281,TLP281-4  
7
2007-10-01  
TLP281,TLP281-4  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
8
2007-10-01  

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