TLP3064 [TOSHIBA]
TOSHIBA Photocoupler GaAs Ired & Photo−Triac; 东芝光电耦合的GaAs红外发光二极管和光电可控硅型号: | TLP3064 |
厂家: | TOSHIBA |
描述: | TOSHIBA Photocoupler GaAs Ired & Photo−Triac |
文件: | 总6页 (文件大小:170K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP3064
TOSHIBA Photocoupler GaAs Ired & Photo−Triac
TLP3064
Office Machine
Household Use Equipment
Triac Driver
Unit in mm
Solid State Relay
The TOSHIBA TLP3064 consists of a zero voltage crossing turn−on
photo−triac optically coupled to a GaAℓAs infrared emitting diode in a
six lead plastic DIP package.
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·
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Peak off−state voltage: 600V(min.)
Trigger LED current: 3mA(max.)
On−state current: 100mA(max.)
Isolation voltage: 5000Vrms(min.)
UL recognized: UL1577, file no. E67349
Option(D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no.83649
Maximum operating insulation voltage: 890V
Highest permissible over voltage: 8000V
PK
PK
TOSHIBA
11−9A2
Weight: 0.44 g
(Note) When a VDE0884 approved type is needed,
please designate the “Option(D4)”
7.62mm pich
standard type
Creepage distance: 7.0mm(min.)
Clearance: 7.0mm(min.)
10.16mm pich
(LF2)type
8.0mm(min.)
8.0mm(min.)
0.5mm(min.)
Pin Configurations(top view)
·
1
2
3
6
Insulation thickness: 0.5mm(min.)
4
ZC
1: ANODE
2: CATHODE
3: N.C.
4: TERMINAL 1
6: TERMINAL 2
(ZC : Zero-cross Circuit)
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2002-09-25
TLP3064
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
30
Unit
mA
Forward current
I
F
Forward current derating
∆I / °C
F
-0.3
mA / °C
(Ta ≥ 25°C)
Peak forward current
(100µs pulse, 100pps)
I
1
A
FP
Reverse voltage
V
5
V
R
Junction temperature
T
125
°C
j
Off-state output terminal
V
600
V
DRM
voltage
Ta=25°C
Ta=70°C
100
50
On-state RMS
I
mA
T(RMS)
current
On-state current derating
(Ta ≥ 25°C)
∆I / °C
-1.1
2
mA / °C
T
Peak on-state current
I
A
A
TP
(100µs pulse, 120pps)
Peak nonrepetitive surge
I
1.2
TSM
current (P =10ms, DC=10%)
W
Junction temperature
T
115
°C
°C
°C
°C
j
Storage temperature range
T
-55~150
-40~100
260
stg
opr
Operating temperature range
T
Lead soldering temperature (10s)
T
sol
Isolation voltage
BV
5000
Vrms
S
(AC, 1min., R.H. ≤ 60%)
(Note 1)
(Note 1) Device considered a two terminal device=Pins 1, 2 and 3 shorted together
and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
V
―
4.5
―
―
6
240
7.5
1
Vac
mA
A
AC
I
F
Peak on-state current
I
―
―
TP
Operating temperature
T
-10
85
°C
opr
2
2002-09-25
TLP3064
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V
I =10mA
1.2
―
―
―
―
―
1.4
―
1.7
10
V
µA
pF
nA
V
F
F
Reverse current
I
V =3 V
R
R
Capacitance
C
T
V=0, f=1MHz
=600V
30
10
―
―
Peak off-state current
Peak on-state voltage
Holding current
I
V
1000
3.0
―
DRM
DRM
V
I
=100mA
TM
TM
I
―
0.6
mA
H
Critical rate of rise of
V =240rms
in
dv / dt
200
500
0.2
―
―
V / µs
V / µs
off-state voltage
Ta=85°C
Critical rate of rise of
commutating voltage
V =60Vrms
in
dv / dt(c)
―
I =15mArms
T
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Trigger LED current
Symbol
Test Condition
Min.
Typ.
Max.
Unit
I
V =6V, resistive load
―
―
―
―
3
mA
V
FT
T
Inhibit voltage
V
I =rated I
F
50
IH
FT
I =rated I
F
FT
Leakage in inhibited state
I
―
―
600
µA
IH
V =rated V
T
DRM
Capacitance input to output
Isolation resistance
C
R
V =0, f=1MHz
S
―
1×1012
5000
―
0.8
1014
―
―
―
―
―
pF
S
V =500V, R.H. ≤ 60%
S
Ω
S
AC, 1 minute
―
Vrms
Vdc
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
―
3
2002-09-25
TLP3064
ΔV / ΔTa – I
F
F
I
– Ta
F
-4.0
-3.6
-3.2
-2.8
100
80
60
-2.4
-2.0
40
-1.6
-1.2
-0.8
20
0
0.1
0.3 0.5
1
3
5
10
30
-20
0
20
40
60
80
100
Forward current
I
(mA)
F
Ambient temperature Ta (℃)
I
– V
I
– D
R
F
F
FP
100
5000
3000
Ta=25℃
Pulse width≦100µs
Ta=25℃
50
30
1000
500
300
10
100
5
3
50
30
1
10
100
3
-
2
1
-
-
1.4
1.6
1.8
2.0
2.2
1.0
1.2
3
10
3
10
3
10
R
3
Rorward voltage V (V)
Duty cycle ratio
D
F
I
– Ta
T(RMS)
120
100
80
60
40
20
0
-20
0
20
40
60
80
100
120
Ambient temperature Ta (℃)
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2002-09-25
TLP3064
Normalized
I
- Ta
Normalized
I
- Ta
FT
H
3
2
3
2
V
T
=6V
1.2
1
1.2
1
0.5
0.3
0.5
0.3
0.1
0.1
-40
60
100
-20
0
20
40
80
100
-40
0
20
40
80
-20
60
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
Normalized
I
- Ta
Normalized
V
- Ta
DRM
DRM
103
102
1.4
V
DRM
=Rated
1.2
1.0
0.8
0.6
0.4
0.2
101
100
100
100
0
60
Ambient temperature Ta (℃)
80
-40
40
60
80
20
40
-20
0
20
Ambient temperature Ta (℃)
Normalized
V
- Ta
Normalized
I
- Ta
IH
IH
3
2
3
2
1.2
1
1.2
1
0.5
0.3
0.5
0.3
I
=Rated I
FT
F
V
T
=Rated V
DRM
I
=Rated I
F
FT
0.1
0.1
-40
60
100
-40
60
Ambient temperature Ta (℃)
100
-20
0
20
40
80
-20
0
20
40
80
Ambient temperature Ta (℃)
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2002-09-25
TLP3064
RESTRICTIONS ON PRODUCT USE
000707EBC
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
·
·
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
6
2002-09-25
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